Abstract: Aspects of the present disclosure include methods, apparatuses, and computer readable media for transmitting a light such that is incident on a semiconductor device, detecting a first reflected light from a first layer of the semiconductor device and a second reflected light from a second layer of the semiconductor device, identifying a defect in the first layer based on the first reflected light and the second reflected light, wherein the defect provides a shunt path between a top electrode to be deposited on the first layer and the second layer, and performing a defect reduction procedure on the semiconductor device to compensate for the defect in response to identifying the defect.

Abstract: A backplane for controlling a display is disclosed. The backplane includes a plurality of tiles formed into an array. Each of the plurality of tiles includes a plurality of complementary metal-oxide-semiconductor backplane dies. Edges of the backplane dies that form a perimeter of the array include electrical connections that direct electrical signals to at least one of the CMOS backplane dies. A display assembly is also disclosed wherein the display assembly includes a backplane having an array of tiles. Each tile includes a plurality of electrically coupled CMOS backplane dies, where edges of the tiles that form an outer perimeter of the array include electrical connections directing electrical signals to one or more of the plurality of CMOS backplane dies. The display assembly further includes at least one light emitting diode array electrically coupled with at least one tile.

Abstract: Embodiments described herein provide processes for forming and removing epitaxial films and materials from growth wafers by epitaxial lift off (ELO) processes. In some embodiments, the growth wafer has edge surfaces with an off-axis orientation which is utilized during the ELO process. The off-axis orientation of the edge surface provides an additional variable for controlling the etch rate during the ELO process and therefore the etch front may be modulated to prevent the formation of high stress points which reduces or prevents stressing and cracking the epitaxial film stack. In one embodiment, the growth wafer is rectangular and has an edge surface with an off-axis orientation rotated by an angle greater than 0° and up to 90° relative to an edge orientation of <110> at 0°.

Abstract: Embodiments of the invention generally relate to apparatuses and methods for producing epitaxial thin films and devices by epitaxial lift off (ELO) processes. In one embodiment, a method for forming thin film devices during an ELO process is provided which includes coupling a plurality of substrates to an elongated support tape, wherein each substrate contains an epitaxial film disposed over a sacrificial layer disposed over a wafer, exposing the substrates to an etchant during an etching process while moving the elongated support tape, and etching the sacrificial layers and peeling the epitaxial films from the wafers while moving the elongated support tape. Embodiments also include several apparatuses, continuous-type as well as a batch-type apparatuses, for forming the epitaxial thin films and devices, including an apparatus for removing the support tape and epitaxial films from the wafers on which the epitaxial films were grown.

Abstract: Embodiments described herein provide processes for forming and removing epitaxial films and materials from growth wafers by epitaxial lift off (ELO) processes. In some embodiments, the growth wafer has edge surfaces with an off-axis orientation which is utilized during the ELO process. The off-axis orientation of the edge surface provides an additional variable for controlling the etch rate during the ELO process and therefore the etch front may be modulated to prevent the formation of high stress points which reduces or prevents stressing and cracking the epitaxial film stack. In one embodiment, the growth wafer is rectangular and has an edge surface with an off-axis orientation rotated by an angle greater than 0° and up to 90° relative to an edge orientation of <110> at 0°.

Abstract: Embodiments described herein provide processes for forming and removing epitaxial films and materials from growth wafers by epitaxial lift off (ELO) processes. In some embodiments, the growth wafer has edge surfaces with an off-axis orientation which is utilized during the ELO process. The off-axis orientation of the edge surface provides an additional variable for controlling the etch rate during the ELO process- and therefore the etch front may be modulated to prevent the formation of high stress points which reduces or prevents stressing and cracking the epitaxial film stack. In one embodiment, the growth wafer is rectangular and has an edge surface with an off-axis orientation rotated by an angle greater than 0° and up to 90° relative to an edge orientation of <110> at 0°.

Abstract: Embodiments described herein provide processes for forming and removing epitaxial films and materials from growth wafers by epitaxial lift off (ELO) processes. In some embodiments, the growth wafer has edge surfaces with an off-axis orientation which is utilized during the ELO process. The off-axis orientation of the edge surface provides an additional variable for controlling the etch rate during the ELO process and therefore the etch front may be modulated to prevent the formation of high stress points which reduces or prevents stressing and cracking the epitaxial film stack. In one embodiment, the growth wafer is rectangular and has an edge surface with an off-axis orientation rotated by an angle greater than 0° and up to 90° relative to an edge orientation of <110> at 0°.

Abstract: Embodiments of the invention generally relate to epitaxial lift off (ELO) thin films and devices and methods used to form such films and devices. In one embodiment, a method for forming an ELO thin film is provided which includes depositing an epitaxial material over a sacrificial layer on a substrate, adhering a flattened, pre-curved support handle onto the epitaxial material, and removing the sacrificial layer during an etching process. The etching process includes bending the pre-curved support handle to have substantial curvature while peeling the epitaxial material from the substrate and forming an etch crevice therebetween. Compression is maintained within the epitaxial material during the etching process. The flattened, pre-curved support handle may be formed by flattening a pre-curved support material.

Abstract: Embodiments of the invention generally relate to apparatuses and methods for producing epitaxial thin films and devices by epitaxial lift off (ELO) processes. In one embodiment, a method for forming thin film devices during an ELO process is provided which includes coupling a plurality of substrates to an elongated support tape, wherein each substrate contains an epitaxial film disposed over a sacrificial layer disposed over a wafer, exposing the substrates to an etchant during an etching process while moving the elongated support tape, and etching the sacrificial layers and peeling the epitaxial films from the wafers while moving the elongated support tape. Embodiments also include several apparatuses, continuous-type as well as a batch-type apparatuses, for forming the epitaxial thin films and devices, including an apparatus for removing the support tape and epitaxial films from the wafers on which the epitaxial films were grown.

Abstract: An apparatus or method for forming a tape-based, epitaxial lift-off film. The epitaxial lift-off film can be for at least one of a solar device, a semiconductor device, and an electronic device. The apparatus can comprise: a tape supply section, the tape supply section providing an unloaded support tape; a lamination section for receiving the unloaded support tape and a plurality of substrates, each substrate containing an epitaxial film thereon, the lamination section adhering the substrates to the unloaded support tape to form a loaded support tape; and an ELO etch section comprising a pressure system for applying pressure on said loaded support tape such that pressure is applied progressively downward and progressively towards a center-line of said loaded support tape when passing through said ELO etch section, the ELO etch section removing the substrates from the loaded support tape, while leaving the epitaxial film on the loaded support tape.

Abstract: Embodiments of the invention generally relate to epitaxial lift off (ELO) thin films and devices and methods used to form such films and devices. In one embodiment, a method for forming an ELO thin film is provided which includes depositing an epitaxial material over a sacrificial layer on a substrate, adhering a flattened, pre-curved support handle onto the epitaxial material, and removing the sacrificial layer during an etching process. The etching process includes bending the pre-curved support handle to have substantial curvature while peeling the epitaxial material from the substrate and forming an etch crevice therebetween. Compression is maintained within the epitaxial material during the etching process. The flattened, pre-curved support handle may be formed by flattening a pre-curved support material.

Abstract: Embodiments of the invention generally relate to epitaxial lift off (ELO) thin films and devices and methods used to form such films and devices. In one embodiment, a method for forming an ELO thin film is provided which includes depositing an epitaxial material over a sacrificial layer on a substrate, adhering a flattened, pre-curved support handle onto the epitaxial material, and removing the sacrificial layer during an etching process. The etching process includes bending the pre-curved support handle to have substantial curvature while peeling the epitaxial material from the substrate and forming an etch crevice therebetween. Compression is maintained within the epitaxial material during the etching process. The flattened, pre-curved support handle may be formed by flattening a pre-curved support material.

Abstract: Embodiments of the invention generally relate to compositions of mesa etch solutions and methods for mesa etching materials on a wafer during an epitaxial lift off (ELO) process. The wafer usually contains an etch stop layer disposed thereon and a laminated epitaxial material disposed on the etch stop layer. In one embodiment, an etch process includes exposing the wafer to a non-selective etch solution and subsequently exposing the wafer to a selective etch solution while peeling the laminated epitaxial material from the wafer. The selective etch solution may contain succinic acid, an ammonium hydroxide compound, and an oxidizing agent, such as hydrogen peroxide. The selective etch solution may have a GaAs/AlAs selectivity of about 600, about 1,000, about 1,400, or greater. The non-selective etch solution may be an aqueous solution containing sulfuric acid and hydrogen peroxide.

Abstract: Embodiments of the invention generally relate to a method for selectively etching or otherwise removing copper or other metallic contaminants from a substrate, such as a gallium arsenide wafer. In one embodiment, a method for selectively removing metallic contaminants from a substrate surface is provided which includes exposing a substrate to a peroxide clean solution, exposing the substrate to a hydroxide clean solution, and exposing the substrate to a selective etch solution containing potassium iodide, iodine, sulfuric acid, and water during a selective etch process. The substrate generally contains gallium arsenide material, such as crystalline gallium arsenide, and is usually a growth substrate for an epitaxial lift off (ELO) process. The copper or other metallic contaminants disposed on the substrate may be selectively etched at a rate of about 500 times, about 1,000 times, about 2,000 times, or about 4,000 times or greater than the gallium arsenide material.

Abstract: Methods and apparatus for converting electromagnetic radiation, such as solar energy, into electric energy with increased efficiency when compared to conventional solar cells are provided. A photovoltaic (PV) device generally includes a window layer; an absorber layer disposed below the window layer such that electrons are generated when photons travel through the window layer and are absorbed by the absorber layer; and a plurality of contacts for external connection coupled to the absorber layer, such that all of the contacts for external connection are disposed below the absorber layer and do not block any of the photons from reaching the absorber layer through the window layer. Locating all the contacts on the back side of the PV device avoids solar shadows caused by front side contacts, typically found in conventional solar cells. Therefore, PV devices described herein with back side contacts may allow for increased efficiency when compared to conventional solar cells.

Abstract: Methods and apparatus are provided for converting electromagnetic radiation, such as solar energy, into electric energy with increased efficiency when compared to conventional solar cells. A photovoltaic (PV) unit may have all electrical contacts positioned on the back side of the PV device to avoid shadowing and increase absorption of the photons impinging on the front side of the PV unit. Several PV units may be combined into PV banks, and an array of PV banks may be connected to form a PV module with thin strips of metal or conductive polymer formed at low temperature. Such innovations may allow for greater efficiency and flexibility in PV devices when compared to conventional solar cells.

Abstract: Methods and apparatus are provided for converting electromagnetic radiation, such as solar energy, into electric energy with increased efficiency when compared to conventional solar cells. A photovoltaic (PV) unit, according to embodiments of the invention, may have a very thin absorber layer produced by epitaxial lift-off (ELO), all electrical contacts positioned on the back side of the PV device to avoid shadowing, and/or front side and back side light trapping employing a diffuser and a reflector to increase absorption of the photons impinging on the front side of the PV unit. Several PV units may be combined into PV banks, and an array of PV banks may be connected to form a PV module with thin strips of metal or conductive polymer applied at low temperature. Such innovations may allow for greater efficiency and flexibility in PV devices when compared to conventional solar cells.

Abstract: Methods and apparatus are provided for converting electromagnetic radiation, such as solar energy, into electric energy with increased efficiency when compared to conventional solar cells. A photovoltaic (PV) unit, according to embodiments of the invention, may have a very thin absorber layer produced by epitaxial lift-off (ELO), all electrical contacts positioned on the back side of the PV device to avoid shadowing, and/or front side and back side light trapping employing a diffuser and a reflector to increase absorption of the photons impinging on the front side of the PV unit. Several PV units may be combined into PV banks, and an array of PV banks may be connected to form a PV module with thin strips of metal or conductive polymer applied at low temperature. Such innovations may allow for greater efficiency and flexibility in PV devices when compared to conventional solar cells.

Abstract: Methods and apparatus are provided for converting electromagnetic radiation, such as solar energy, into electric energy with increased efficiency when compared to conventional solar cells. A photovoltaic (PV) unit, according to embodiments of the invention, may have a very thin absorber layer produced by epitaxial lift-off (ELO), all electrical contacts positioned on the back side of the PV device to avoid shadowing, and/or front side and back side light trapping employing a diffuser and a reflector to increase absorption of the photons impinging on the front side of the PV unit. Several PV units may be combined into PV banks, and an array of PV banks may be connected to form a PV module with thin strips of metal or conductive polymer applied at low temperature. Such innovations may allow for greater efficiency and flexibility in PV devices when compared to conventional solar cells.

Abstract: A disposable, protective covering to be easily applied over the bottom of purses and other bags to provide consumers a simple means of protecting their purse, tote bag, lunch box, backpack, or other bag from being sullied with dirt, grime, germs and bacteria that are easily transferred onto its surface when placed on the ground while using the restroom, attending public events or traveling.