Abstract: An assembly and method for connecting two substrates utilizes a nonconductive laminant that is compatible when wet with a conductive paste when wet. Thus, the curing of the nonconductive laminant and the conductive paste may be performed together. The nonconductive laminant also cures in a shorter time than those previously available, thus the stress on the semiconductor device created by exposure to the cure temperature is additionally reduced.

Abstract: A method for connecting substrates includes using an adhesive interposer structure (11) to bond a semiconductor device (26) to a substrate (18). The adhesive interposer structure (11) includes a non-conductive adhesive laminant (12) and conductive adhesive bumps (13). The conductive adhesive bumps (13) provide a conductive path between conductive bumps (27) on the semiconductor device (26) and conductive metal pads (21) located on the substrate (18). In an alternative embodiment, a conductive adhesive material (34) is screen or stencil printed into vias (39) located on a printed circuit board (38) to form conductive adhesive bumps (33). A non-conductive adhesive (52) is then screen or stencil printed onto the printed circuit board (38) adjacent the conductive adhesive bumps (33). A semiconductor die is then connected to the structure.

Abstract: A silicon wafer and a III-V semiconductor wafer are bonded together through a bonding interlayer which is deposited on the III-V semiconductor wafer. By forming the bonding interlayer on the III-V semiconductor wafer, rather than the silicon wafer, the bonding process is facilitated, creating a sufficiently strong bond to carry out further processing. The III-V semiconductor wafer is thinned to relieve stress after the bonding procedure. The bonded wafers may be subjected to a second bonding procedure to increase the bond strength. The bonded wafers can then be subjected to high temperature processing used in semiconductor device fabrication.

Abstract: A method for thinning a semiconductor wafer (11) is provided. An support film (15) is mounted to the semiconductor wafer (11). The support film (15) provides support for a semiconductor wafer during thinning as well as protection for a front-side (12) of the semiconductor wafer (11). After mounting the support film (15) to the semiconductor wafer (11), a back-side (13) of the semiconductor wafer is etched in a two step process. First the back-side (13) undergoes a mechanical grinding followed by a chemical etch. A metal film (18) may be sputtered on the back-side (13). The semiconductor wafer (11) having the support film (15) is placed in a tape frame (20) for dicing operations and the support film (15) is removed from the front-side (12) of the semiconductor wafer (11).

Abstract: A method for selectively depositing polysilicon on a semiconductor surface (13) is accomplished by preparing the surface (13) in a manner to provide a contamination free surface. The contamination free semiconductor surface is placed into a chemical vapor deposition reactor. The semiconductor surface (13) is exposed to a single crystal inhibitor gas to prevent formation of single crystal silicon on surface (13). Semiconductor surface (13) is then exposed to a silicon containing gas with a hydrogen source to form the polysilicon.