Patents by Inventor Melissa Hagen

Melissa Hagen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Capacitively coupled plasma reactor with uniform radial distribution of plasma
    Patent number: 6900596
    Abstract: A plasma reactor for processing a semiconductor wafer includes a side wall and an overhead ceiling defining a chamber, a workpiece support cathode within the chamber having a working surface facing the ceiling for supporting a semiconductor workpiece, process gas inlets for introducing a process gas into the chamber and an RF bias power generator having a bias power frequency. There is a bias power feed point at the working surface and an RF conductor is connected between the RF bias power generator and the bias power feed point at the working surface. A dielectric sleeve surrounds a portion of the RF conductor, the sleeve having an axial length along the RF conductor, a dielectric constant and an axial location along the RF conductor, the length, dielectric constant and location of the sleeve being such that the sleeve provides a reactance that enhances plasma ion density uniformity over the working surface.
    Type: Grant
    Filed: September 4, 2002
    Date of Patent: May 31, 2005
    Assignee: Applied Materials, Inc.
    Inventors: Jang Gyoo Yang, Daniel J. Hoffman, James D. Carducci, Douglas A. Buchberger, Jr., Melissa Hagen, Matthew L. Miller, Kang-Lie Chiang, Gerardo A. Delgadino, Robert B. Hagen
  • Capacitively coupled plasma reactor with uniform radial distribution of plasma
    Publication number: 20040056602
    Abstract: A plasma reactor for processing a semiconductor wafer includes a side wall and an overhead ceiling defining a chamber, a workpiece support cathode within the chamber having a working surface facing the ceiling for supporting a semiconductor workpiece, process gas inlets for introducing a process gas into the chamber and an RF bias power generator having a bias power frequency. There is a bias power feed point at the working surface and an RF conductor is connected between the RF bias power generator and the bias power feed point at the working surface. A dielectric sleeve surrounds a portion of the RF conductor, the sleeve having an axial length along the RF conductor, a dielectric constant and an axial location along the RF conductor, the length, dielectric constant and location of the sleeve being such that the sleeve provides a reactance that enhances plasma ion density uniformity over the working surface.
    Type: Application
    Filed: September 4, 2002
    Publication date: March 25, 2004
    Applicant: Applied Materials, Inc.
    Inventors: Jang Gyoo Yang, Daniel J. Hoffman, James D. Carducci, Douglas A. Buchberger,, Robert B. Hagen, Melissa Hagen, Matthew L. Miller, Kang-Lie Chiang, Gerardo A. Delgadino