Patents by Inventor Melissa J. ARCHER
Melissa J. ARCHER has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11942566Abstract: A method is provided for preparing at least one textured layer in an optoelectronic device. The method includes epitaxially growing a semiconductor layer of the optoelectronic device over a growth substrate; exposing the semiconductor layer to an etching process to create the at least one textured surface on the semiconductor layer; and lifting the optoelectronic device from the growth substrate.Type: GrantFiled: June 14, 2021Date of Patent: March 26, 2024Assignee: UTICA LEASECO, LLCInventors: Yan Zhu, Sean Sweetnam, Brendan M. Kayes, Melissa J. Archer, Gang He
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Publication number: 20210305452Abstract: A method is provided for preparing at least one textured layer in an optoelectronic device. The method includes epitaxially growing a semiconductor layer of the optoelectronic device over a growth substrate; exposing the semiconductor layer to an etching process to create the at least one textured surface on the semiconductor layer; and lifting the optoelectronic device from the growth substrate.Type: ApplicationFiled: June 14, 2021Publication date: September 30, 2021Inventors: Yan ZHU, Sean SWEETNAM, Brendan M. KAYES, Melissa J. ARCHER, Gang HE
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Patent number: 11038080Abstract: An optoelectronic device having a textured layer is described. In an aspect, a method may be used to produce the optoelectronic device, where the method includes epitaxially growing a semiconductor layer of the optoelectronic device on a growth substrate, and exposing the semiconductor layer to an etching process to create at least one textured surface in the semiconductor layer. The textured semiconductor layer can be referred to as a textured layer. The etching process is performed without the use of a template layer, or similar layer, configured as a mask to generate the texturing. The etching process can be done by one or more of a liquid or solution-based chemical etchant, gas etching, laser etching, plasma etching, or ion etching. The method can also include lifting the semiconductor layer of the optoelectronic device from the growth substrate by, for example, the use of an epitaxial lift off (ELO) process.Type: GrantFiled: February 1, 2017Date of Patent: June 15, 2021Assignee: UTICA LEASECO, LLCInventors: Yan Zhu, Sean Sweetnam, Brendan M. Kayes, Melissa J. Archer, Gang He
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Patent number: 10797187Abstract: Methods and apparatus for converting electromagnetic radiation, such as solar energy, into electric energy with increased efficiency when compared to conventional solar cells are provided. A photovoltaic (PV) device generally includes a window layer; an absorber layer disposed below the window layer such that electrons are generated when photons travel through the window layer and are absorbed by the absorber layer; and a plurality of contacts for external connection coupled to the absorber layer, such that all of the contacts for external connection are disposed below the absorber layer and do not block any of the photons from reaching the absorber layer through the window layer. Locating all the contacts on the back side of the PV device avoids solar shadows caused by front side contacts, typically found in conventional solar cells. Therefore, PV devices described herein with back side contacts may allow for increased efficiency when compared to conventional solar cells.Type: GrantFiled: May 7, 2015Date of Patent: October 6, 2020Assignee: ALTA DEVICES, INC.Inventors: Gang He, Isik C. Kizilyalli, Melissa J. Archer, Harry A. Atwater, Thomas J. Gmitter, Andreas G. Hegedus, Gregg S. Higashi
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Patent number: 10615304Abstract: An optoelectronic device and a method for fabricating the optoelectronic device are disclosed. The optoelectronic device comprises a p-n structure, a patterned dielectric layer comprising a dielectric material and a metal layer disposed on the dielectric layer. The metal layer makes one or more contact to the p-n structure through the patterned dielectric layer. The dielectric material may be chemically resistant to acids and may provide adhesion to the p-n structure and the metal layer. The method for fabricating an optoelectronic device comprises providing a p-n structure, providing a dielectric layer on the p-n structure and providing a metal layer on the dielectric layer and then lifting the device off the substrate, such that after the lift off the p-n structure is closer than the patterned dielectric layer to a front side of the device; wherein the device comprises the p-n structure, the patterned dielectric layer, and the metal layer.Type: GrantFiled: December 11, 2017Date of Patent: April 7, 2020Assignee: ALTA DEVICES, INC.Inventors: Brendan M. Kayes, Melissa J. Archer, Thomas J. Gmitter, Gang He
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Patent number: 10505058Abstract: Methods and apparatus are provided for converting electromagnetic radiation, such as solar energy, into electric energy with increased efficiency when compared to conventional solar cells. One embodiment of the present invention provides a photovoltaic (PV) device. The PV device comprises an absorber layer made of a compound semiconductor; and an emitter layer located closer than the absorber layer to a first side of the device. The PV device includes a p-n junction formed between the emitter layer and the absorber layer, the p-n junction causing a voltage to be generated in the device in response to the device being exposed to light at a second side of the device. Such innovations may allow for greater efficiency and flexibility in PV devices when compared to conventional solar cells.Type: GrantFiled: May 6, 2019Date of Patent: December 10, 2019Assignee: ALTA DEVICES, INC.Inventors: Melissa J. Archer, Thomas J. Gmitter, Gang He, Gregg Higashi
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Publication number: 20190259888Abstract: Methods and apparatus are provided for converting electromagnetic radiation, such as solar energy, into electric energy with increased efficiency when compared to conventional solar cells. One embodiment of the present invention provides a photovoltaic (PV) device. The PV device comprises an absorber layer made of a compound semiconductor; and an emitter layer located closer than the absorber layer to a first side of the device. The PV device includes a p-n junction formed between the emitter layer and the absorber layer, the p-n junction causing a voltage to be generated in the device in response to the device being exposed to light at a second side of the device. Such innovations may allow for greater efficiency and flexibility in PV devices when compared to conventional solar cells.Type: ApplicationFiled: May 6, 2019Publication date: August 22, 2019Inventors: Melissa J. ARCHER, Thomas J. GMITTER, Gang HE, Gregg HIGASHI
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Patent number: 10326033Abstract: Methods and apparatus are provided for converting electromagnetic radiation, such as solar energy, into electric energy with increased efficiency when compared to conventional solar cells. One embodiment of the present invention provides a photovoltaic (PV) device. The PV device comprises an absorber layer made of a compound semiconductor; and an emitter layer located closer than the absorber layer to a first side of the device. The PV device includes a p-n junction formed between the emitter layer and the absorber layer, the p-n junction causing a voltage to be generated in the device in response to the device being exposed to light at a second side of the device. Such innovations may allow for greater efficiency and flexibility in PV devices when compared to conventional solar cells.Type: GrantFiled: February 20, 2013Date of Patent: June 18, 2019Assignee: ALTA DEVICES, INC.Inventors: Melissa J. Archer, Thomas J. Gmitter, Gang He, Gregg Higashi
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Patent number: 10008628Abstract: A method for providing a textured layer in an optoelectronic device is disclosed. The method includes depositing a template layer on a first layer. The template layer has significant inhomogeneity either in thickness or in composition, or both, including the possibility of forming one or more islands to provide at least one textured surface of the island layer. The method also includes exposing the template layer and the first layer to an etching process to create or alter at least one textured surface. The altered at least one textured surface is operative to cause scattering of light.Type: GrantFiled: November 1, 2016Date of Patent: June 26, 2018Assignee: ALTA DEVICES, INC.Inventors: I-Kang Ding, Brendan M. Kayes, Rose Twist, Sylvia Spruytte, Feng Liu, Gregg Higashi, Melissa J. Archer, Gang He
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Publication number: 20180102443Abstract: An optoelectronic device and a method for fabricating the optoelectronic device are disclosed. The optoelectronic device comprises a p-n structure, a patterned dielectric layer comprising a dielectric material and a metal layer disposed on the dielectric layer. The metal layer makes one or more contact to the p-n structure through the patterned dielectric layer. The dielectric material may be chemically resistant to acids and may provide adhesion to the p-n structure and the metal layer. The method for fabricating an optoelectronic device comprises providing a p-n structure, providing a dielectric layer on the p-n structure and providing a metal layer on the dielectric layer and then lifting the device off the substrate, such that after the lift off the p-n structure is closer than the patterned dielectric layer to a front side of the device; wherein the device comprises the p-n structure, the patterned dielectric layer, and the metal layer.Type: ApplicationFiled: December 11, 2017Publication date: April 12, 2018Inventors: Brendan M. Kayes, Melissa J. Archer, Thomas J. Gmitter, Gang HE
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Publication number: 20170148930Abstract: An optoelectronic device having a textured layer is described. In an aspect, a method may be used to produce the optoelectronic device, where the method includes epitaxially growing a semiconductor layer of the optoelectronic device on a growth substrate, and exposing the semiconductor layer to an etching process to create at least one textured surface in the semiconductor layer. The textured semiconductor layer can be referred to as a textured layer. The etching process is performed without the use of a template layer, or similar layer, configured as a mask to generate the texturing. The etching process can be done by one or more of a liquid or solution-based chemical etchant, gas etching, laser etching, plasma etching, or ion etching. The method can also include lifting the semiconductor layer of the optoelectronic device from the growth substrate by, for example, the use of an epitaxial lift off (ELO) process.Type: ApplicationFiled: February 1, 2017Publication date: May 25, 2017Inventors: Yan ZHU, Sean SWEETNAM, Brendan M. KAYES, Melissa J. ARCHER, Gang HE
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Publication number: 20170047471Abstract: A method for providing a textured layer in an optoelectronic device is disclosed. The method includes depositing a template layer on a first layer. The template layer has significant inhomogeneity either in thickness or in composition, or both, including the possibility of forming one or more islands to provide at least one textured surface of the island layer. The method also includes exposing the template layer and the first layer to an etching process to create or alter at least one textured surface. The altered at least one textured surface is operative to cause scattering of light.Type: ApplicationFiled: November 1, 2016Publication date: February 16, 2017Inventors: I-Kang DING, Brendan M. KAYES, Rose TWIST, Sylvia SPRUYTTE, Feng LIU, Gregg HIGASHI, Melissa J. ARCHER, Gang HE
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Patent number: 9502594Abstract: A method for providing a textured layer in an optoelectronic device is disclosed. The method includes depositing a template layer on a first layer. The template layer has significant inhomogeneity either in thickness or in composition, or both, including the possibility of forming one or more islands to provide at least one textured surface of the island layer. The method also includes exposing the template layer and the first layer to an etching process to create or alter at least one textured surface. The altered at least one textured surface is operative to cause scattering of light.Type: GrantFiled: August 5, 2014Date of Patent: November 22, 2016Assignee: Alta Devices, Inc.Inventors: I-Kang Ding, Brendan M. Kayes, Rose Twist, Sylvia Spruytte, Feng Liu, Gregg Higashi, Melissa J. Archer, Gang He
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Patent number: 9269843Abstract: A method for providing a textured layer in an optoelectronic device is disclosed. The method includes depositing a template layer on a first layer. The template layer has significant inhomogeneity either in thickness or in composition, or both, including the possibility of forming one or more islands to provide at least one textured surface of the island layer. The method also includes exposing the template layer and the first layer to an etching process to create or alter at least one textured surface. The altered at least one textured surface is operative to cause scattering of light.Type: GrantFiled: August 5, 2014Date of Patent: February 23, 2016Assignee: ALTA DEVICES, INC.Inventors: I-Kang Ding, Brendan M. Kayes, Rose Twist, Sylvia Spruytte, Feng Liu, Gregg Higashi, Melissa J. Archer, Gang He
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Publication number: 20150380576Abstract: An optoelectronic device and a method for fabricating the optoelectronic device are disclosed. The optoelectronic device comprises a p-n structure, a patterned dielectric layer comprising a dielectric material and a metal layer disposed on the dielectric layer. The metal layer makes one or more contact to the p-n structure through the patterned dielectric layer. The dielectric material may be chemically resistant to acids and may provide adhesion to the p-n structure and the metal layer. The method for fabricating an optoelectronic device comprises providing a p-n structure, providing a dielectric layer on the p-n structure and providing a metal layer on the dielectric layer and then lifting the device off the substrate, such that after the lift off the p-n structure is closer than the patterned dielectric layer to a front side of the device; wherein the device comprises the p-n structure, the patterned dielectric layer, and the metal layer.Type: ApplicationFiled: September 4, 2015Publication date: December 31, 2015Inventors: Brendan M. KAYES, Melissa J. ARCHER, Thomas J. GMITTER, Gang HE
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Publication number: 20150340520Abstract: A method for providing a textured layer in an optoelectronic device is disclosed. The method includes depositing a template layer on a first layer. The template layer has significant inhomogeneity either in thickness or in composition, or both, including the possibility of forming one or more islands to provide at least one textured surface of the island layer. The method also includes exposing the template layer and the first layer to an etching process to create or alter at least one textured surface. The altered at least one textured surface is operative to cause scattering of light.Type: ApplicationFiled: August 5, 2014Publication date: November 26, 2015Inventors: I-Kang DING, Brendan M. KAYES, Rose TWIST, Sylvia SPRYUTTE, Feng LIU, Gregg HIGASHI, Melissa J. ARCHER, Gang HE
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Publication number: 20150243815Abstract: Methods and apparatus for converting electromagnetic radiation, such as solar energy, into electric energy with increased efficiency when compared to conventional solar cells are provided. A photovoltaic (PV) device generally includes a window layer; an absorber layer disposed below the window layer such that electrons are generated when photons travel through the window layer and are absorbed by the absorber layer; and a plurality of contacts for external connection coupled to the absorber layer, such that all of the contacts for external connection are disposed below the absorber layer and do not block any of the photons from reaching the absorber layer through the window layer. Locating all the contacts on the back side of the PV device avoids solar shadows caused by front side contacts, typically found in conventional solar cells. Therefore, PV devices described herein with back side contacts may allow for increased efficiency when compared to conventional solar cells.Type: ApplicationFiled: May 7, 2015Publication date: August 27, 2015Inventors: Gang HE, Isik C. KIZILYALLI, Melissa J. ARCHER, Harry A. ATWATER, Thomas J. GMITTER, Andreas G. HEGEDUS, Gregg S. HIGASHI
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Patent number: 8912432Abstract: Methods and apparatus are provided for converting electromagnetic radiation, such as solar energy, into electric energy with increased efficiency when compared to conventional solar cells. In one embodiment of a photovoltaic (PV) device, the PV device generally includes an n-doped layer and a p+-doped layer adjacent to the n-doped layer to form a p-n layer such that electric energy is created when electromagnetic radiation is absorbed by the p-n layer. The n-doped layer and the p+-doped layer may compose an absorber layer having a thickness less than 500 nm. Such a thin absorber layer may allow for greater efficiency and flexibility in PV devices when compared to conventional solar cells.Type: GrantFiled: November 5, 2010Date of Patent: December 16, 2014Assignee: Alta Devices, Inc.Inventors: Isik C. Kizilyalli, Melissa J. Archer, Harry Atwater, Thomas J. Gmitter, Gang He, Andreas G. Hegedus, Gregg Higashi
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Patent number: 8895847Abstract: Methods and apparatus are provided for converting electromagnetic radiation, such as solar energy, into electric energy with increased efficiency when compared to conventional solar cells. A photovoltaic (PV) device may incorporate front side and/or back side light trapping techniques in an effort to absorb as many of the photons incident on the front side of the PV device as possible in the absorber layer. The light trapping techniques may include a front side antireflective coating, multiple window layers, roughening or texturing on the front and/or the back sides, a back side diffuser for scattering the light, and/or a back side reflector for redirecting the light into the interior of the PV device. With such light trapping techniques, more light may be absorbed by the absorber layer for a given amount of incident light, thereby increasing the efficiency of the PV device.Type: GrantFiled: November 5, 2010Date of Patent: November 25, 2014Assignee: Alta Devices, Inc.Inventors: Isik C. Kizilyalli, Melissa J. Archer, Harry Atwater, Thomas J. Gmitter, Gang He, Andreas G. Hegedus, Gregg Higashi
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Patent number: 8669467Abstract: Methods and apparatus are provided for converting electromagnetic radiation, such as solar energy, into electric energy with increased efficiency when compared to conventional solar cells. In one embodiment of a photovoltaic (PV) device, the PV device generally includes an n-doped layer and a p+-doped layer adjacent to the n-doped layer to form a p-n layer such that electric energy is created when electromagnetic radiation is absorbed by the p-n layer. The n-doped layer and the p+-doped layer may compose an absorber layer having a thickness less than 500 nm. Such a thin absorber layer may allow for greater efficiency and flexibility in PV devices when compared to conventional solar cells.Type: GrantFiled: November 5, 2010Date of Patent: March 11, 2014Assignee: Alta Devices, Inc.Inventors: Isik C. Kizilyalli, Melissa J. Archer, Harry Atwater, Thomas J. Gmitter, Gang He, Andreas G. Hegedus, Gregg Higashi