Patents by Inventor Melissa Shell

Melissa Shell has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7567379
    Abstract: Passivation coatings and gettering agents may be used in an Extreme Ultraviolet (EUV) source which uses tin (Sn) vapor as a plasma “fuel” to prevent contamination and corresponding loss of reflectivity due to tin contamination. The passivation coating may be a material to which tin does not adhere, and may be placed on reflective surfaces in the source chamber. The gettering agent may be a material that reacts strongly with tin, and may be placed outside of the collector mirrors and/or on non-reflective surfaces. A passivation coating may also be provided on the insulator between the anode and cathode of the source electrodes to prevent shorting due to tin coating the insulator surface.
    Type: Grant
    Filed: April 29, 2004
    Date of Patent: July 28, 2009
    Assignee: Intel Corporation
    Inventors: Robert Bristol, Bryan J. Rice, Ming Fang, John P. Barnak, Melissa Shell
  • Patent number: 7041993
    Abstract: Erosion-resistive coatings are provided on critical plasma-facing surfaces of an electrical gas plasma head for an EUV source. The erosion-resistive coatings comprise diamond and diamond-like materials deposited onto the critical plasma-facing surfaces. A pure diamond coating is deposited onto the plasma exposed insulator surfaces using, for example, a chemical vapor deposition processes. The diamond coating is made conductive by selective doping with p-type material, such as, but not limited to, boron and graphite.
    Type: Grant
    Filed: August 18, 2004
    Date of Patent: May 9, 2006
    Assignee: Intel Corporation
    Inventors: Manish Chandhok, Kramadhati V. Ravi, Robert Bristol, Melissa Shell
  • Publication number: 20050244572
    Abstract: Passivation coatings and gettering agents may be used in an Extreme Ultraviolet (EUV) source which uses tin (Sn) vapor as a plasma “fuel” to prevent contamination and corresponding loss of reflectivity due to tin contamination. The passivation coating may be a material to which tin does not adhere, and may be placed on reflective surfaces in the source chamber. The gettering agent may be a material that reacts strongly with tin, and may be placed outside of the collector mirrors and/or on non-reflective surfaces. A passivation coating may also be provided on the insulator between the anode and cathode of the source electrodes to prevent shorting due to tin coating the insulator surface.
    Type: Application
    Filed: April 29, 2004
    Publication date: November 3, 2005
    Inventors: Robert Bristol, Bryan Rice, Ming Fang, John Barnak, Melissa Shell
  • Publication number: 20050019492
    Abstract: Erosion-resistive coatings are provided on critical plasma-facing surfaces of an electrical gas plasma head for an EUV source. The erosion-resistive coatings comprise diamond and diamond-like materials deposited onto the critical plasma-facing surfaces. A pure diamond coating is deposited onto the plasma exposed insulator surfaces using, for example, a chemical vapor deposition processes. The diamond coating is made conductive by selective doping with p-type material, such as, but not limited to, boron and graphite.
    Type: Application
    Filed: August 18, 2004
    Publication date: January 27, 2005
    Inventors: Manish Chandhok, Kramadhati Ravi, Robert Bristol, Melissa Shell
  • Patent number: 6809328
    Abstract: Erosion-resistive coatings are provided on critical plasma-facing surfaces of an electrical gas plasma head for an EUV source. The erosion-resistive coatings comprise diamond and diamond-like materials deposited onto the critical plasma-facing surfaces. A pure diamond coating is deposited onto the plasma exposed insulator surfaces using, for example, a chemical vapor deposition processes. The diamond coating is made conductive by selective doping with p-type material, such as, but not limited to, boron and graphite.
    Type: Grant
    Filed: December 20, 2002
    Date of Patent: October 26, 2004
    Assignee: Intel Corporation
    Inventors: Manish Chandhok, Kramadhati V. Ravi, Robert Bristol, Melissa Shell
  • Patent number: 6787788
    Abstract: An insulator may be operable to electrically insulate a cathode from an anode in an extreme ultraviolet (EUV) source of an EUV lithography tool. The insulator may be made of an aluminosilicate or a SiN/SiC material. The extreme ultraviolet source may be operable to produce a plasma which emits extreme ultraviolet radiation.
    Type: Grant
    Filed: January 21, 2003
    Date of Patent: September 7, 2004
    Inventors: Melissa Shell, Bryan J. Rice
  • Publication number: 20040140439
    Abstract: An insulator may be operable to electrically insulate a cathode from an anode in an extreme ultraviolet (EUV) source of an EUV lithography tool. The insulator may be made of an aluminosilicate or a SiN/SiC material. The extreme ultraviolet source may be operable to produce a plasma which emits extreme ultraviolet radiation.
    Type: Application
    Filed: January 21, 2003
    Publication date: July 22, 2004
    Inventors: Melissa Shell, Bryan J. Rice
  • Publication number: 20040120461
    Abstract: Erosion-resistive coatings are provided on critical plasma-facing surfaces of an electrical gas plasma head for an EUV source. The erosion-resistive coatings comprise diamond and diamond-like materials deposited onto the critical plasma-facing surfaces. A pure diamond coating is deposited onto the plasma exposed insulator surfaces using, for example, a chemical vapor deposition processes. The diamond coating is made conductive by selective doping with p-type material, such as, but not limited to, boron and graphite.
    Type: Application
    Filed: December 20, 2002
    Publication date: June 24, 2004
    Inventors: Manish Chandhok, K.V. Ravi, Robert Bristol, Melissa Shell