Patents by Inventor Melvin B. McLaurin
Melvin B. McLaurin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9117944Abstract: A plurality of III-nitride semiconductor structures, each including a light emitting layer disposed between an n-type region and a p-type region, are grown on a composite substrate. The composite substrate includes a plurality of islands of III-nitride material connected to a host by a bonding layer. The plurality of III-nitride semiconductor structures are grown on the III-nitride islands. The composite substrate may be formed such that each island of III-nitride material is at least partially relaxed. As a result, the light emitting layer of each semiconductor structure has an a-lattice constant greater than 3.19 angstroms.Type: GrantFiled: September 24, 2008Date of Patent: August 25, 2015Assignees: Koninklijke Philips N.V., Philips Lumileds Lighting Company LLCInventors: Melvin B. McLaurin, Michael R. Krames
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Patent number: 8492244Abstract: The present invention provides methods for forming at least partially relaxed strained material layers on a target substrate. The methods include forming islands of the strained material layer on an intermediate substrate, at least partially relaxing the strained material islands by a first heat treatment, and transferring the at least partially relaxed strained material islands to the target substrate. The at least partial relaxation is facilitated by the presence of low-viscosity or compliant layers adjacent to the strained material layer. The invention also provides semiconductor structures having an at least partially relaxed strained material layer, and semiconductor devices fabricated using an at least partially relaxed strained material layer.Type: GrantFiled: April 7, 2011Date of Patent: July 23, 2013Assignee: SoitecInventors: Pascal Guenard, Bruce Faure, Fabrice Letertre, Michael R. Krames, Nathan F. Gardner, Melvin B. McLaurin
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Patent number: 8481408Abstract: A method for relaxing a layer of a strained material. The method includes depositing a first low-viscosity layer on a first face of a strained material layer; bonding a first substrate to the first low-viscosity layer to form a first composite structure; subjecting the composite structure to heat treatment sufficient to cause reflow of the first low-viscosity layer so as to at least partly relax the strained material layer; and applying a mechanical pressure to a second face of the strained material layer wherein the second face is opposite to the first face and with the mechanical pressure applied perpendicularly to the strained material layer during at least part of the heat treatment to relax the strained material.Type: GrantFiled: April 27, 2012Date of Patent: July 9, 2013Assignee: SoitecInventors: Fabrice Letertre, Carlos Mazure, Michael R. Krames, Melvin B. McLaurin, Nathan F. Gardner
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Patent number: 8334543Abstract: Embodiments of the invention include a substrate comprising a host and a seed layer bonded to the host, and a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region grown over the seed layer. A variation in index of refraction in a direction perpendicular to a growth direction of the semiconductor structure is disposed between the host and the light emitting layer.Type: GrantFiled: April 30, 2012Date of Patent: December 18, 2012Assignees: Koninklijke Philips Electronics N.V., Philips Lumileds Lighting Company, LLCInventors: Aurelien J. F. David, Michael R. Krames, Melvin B. McLaurin
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Publication number: 20120241798Abstract: Embodiments of the invention include a substrate comprising a host and a seed layer bonded to the host, and a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region grown over the seed layer. A variation in index of refraction in a direction perpendicular to a growth direction of the semiconductor structure is disposed between the host and the light emitting layer.Type: ApplicationFiled: April 30, 2012Publication date: September 27, 2012Applicants: PHILIPS LUMILEDS LIGHTING COMPANY, LLC, KONINKLIJKE PHILIPS ELECTRONICS N.V.Inventors: Aurelien J.F. David, Michael R. Krames, Melvin B. McLaurin
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Publication number: 20120214291Abstract: A method for relaxing a layer of a strained material. The method includes depositing a first low-viscosity layer on a first face of a strained material layer; bonding a first substrate to the first low-viscosity layer to form a first composite structure; subjecting the composite structure to heat treatment sufficient to cause reflow of the first low-viscosity layer so as to at least partly relax the strained material layer; and applying a mechanical pressure to a second face of the strained material layer wherein the second face is opposite to the first face and with the mechanical pressure applied perpendicularly to the strained material layer during at least part of the heat treatment to relax the strained material.Type: ApplicationFiled: April 27, 2012Publication date: August 23, 2012Applicant: SOITECInventors: Fabrice Letertre, Carlos Mazure, Michael R. Krames, Melvin B. McLaurin, Nathan F. Gardner
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Patent number: 8203153Abstract: Embodiments of the invention include a substrate comprising a host and a seed layer bonded to the host, and a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region grown over the seed layer. A variation in index of refraction in a direction perpendicular to a growth direction of the semiconductor structure is disposed between the host and the light emitting layer.Type: GrantFiled: January 15, 2010Date of Patent: June 19, 2012Assignees: Koninklijke Philips Electronics N.V., Philips Lumileds LightingCompany, LLCInventors: Aurelien J. F. David, Michael R. Krames, Melvin B. McLaurin
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Publication number: 20120068192Abstract: A method of reducing threading dislocation densities in non-polar such as a-{11-20} plane and m-{1-100} plane or semi-polar such as {10-1n} plane III-Nitrides by employing lateral epitaxial overgrowth from sidewalls of etched template material through a patterned mask. The method includes depositing a patterned mask on a template material such as a non-polar or semi polar GaN template, etching the template material down to various depths through openings in the mask, and growing non-polar or semi-polar III-Nitride by coalescing laterally from the tops of the sidewalls before the vertically growing material from the trench bottoms reaches the tops of the sidewalls. The coalesced features grow through the openings of the mask, and grow laterally over the dielectric mask until a fully coalesced continuous film is achieved.Type: ApplicationFiled: November 30, 2011Publication date: March 22, 2012Applicant: The Regents of the University of CaliforniaInventors: Kwang C. Kim, Mathew C. Schmidt, Feng Wu, Asako Hirai, Melvin B. McLaurin, Steven P. DenBaars, Shuji Nakamura, James S. Speck
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Patent number: 8106403Abstract: Embodiments of the invention include a III-nitride semiconductor structure comprising a light emitting region disposed between an n-type region and a p-type region. At least one layer in the light emitting region is Bx(InyGa1-y)1-xN. In some embodiments, x is less than 14%. In some embodiments, the BN composition is selected such that the Bx(InyGa1-y)1-xN layer has the same band gap energy as a comparable InGaN layer, with a bulk lattice constant that is the same or smaller than the comparable InGaN layer.Type: GrantFiled: March 4, 2009Date of Patent: January 31, 2012Assignees: Koninklijke Philips Electronics N.V., Philips Lumileds Lighting Company, LLCInventor: Melvin B. McLaurin
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Patent number: 8105852Abstract: A method according to embodiments of the invention includes providing a substrate comprising a host and a seed layer bonded to the host. The seed layer comprises a plurality of regions. A semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region is grown on the substrate. A top surface of a semiconductor layer grown on the seed layer has a lateral extent greater than each of the plurality of seed layer regions.Type: GrantFiled: January 15, 2010Date of Patent: January 31, 2012Assignees: Koninklijke Philips Electronics N.V., Philips Lumileds Lighting Company, LLCInventors: Nathan F. Gardner, Michael R. Krames, Melvin B. McLaurin, Sungsoo Yi
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Publication number: 20110193094Abstract: A method of growing highly planar, fully transparent and specular m-plane gallium nitride (GaN) films. The method provides for a significant reduction in structural defect densities via a lateral overgrowth technique. High quality, uniform, thick m-plane GaN films are produced for use as substrates for polarization-free device growth.Type: ApplicationFiled: April 14, 2011Publication date: August 11, 2011Applicants: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA, JAPAN SCIENCE AND TECHNOLOGY AGENCYInventors: Benjamin A. Haskell, Melvin B. McLaurin, Steven P. DenBaars, James Stephen Speck, Shuji Nakamura
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Publication number: 20110180911Abstract: The present invention provides methods for forming at least partially relaxed strained material layers on a target substrate. The methods include forming islands of the strained material layer on an intermediate substrate, at least partially relaxing the strained material islands by a first heat treatment, and transferring the at least partially relaxed strained material islands to the target substrate. The at least partial relaxation is facilitated by the presence of low-viscosity or compliant layers adjacent to the strained material layer. The invention also provides semiconductor structures having an at least partially relaxed strained material layer, and semiconductor devices fabricated using an at least partially relaxed strained material layer.Type: ApplicationFiled: April 7, 2011Publication date: July 28, 2011Inventors: Pascal Guenard, Bruce Faure, Fabrice Letertre, Michael R. Krames, Nathan F. Gardner, Melvin B. McLaurin
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Publication number: 20110177631Abstract: A method according to embodiments of the invention includes providing a substrate comprising a host and a seed layer bonded to the host. The seed layer comprises a plurality of regions. A semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region is grown on the substrate. A top surface of a semiconductor layer grown on the seed layer has a lateral extent greater than each of the plurality of seed layer regions.Type: ApplicationFiled: January 15, 2010Publication date: July 21, 2011Applicants: KONINKLIJKE PHILIPS ELECTRONICS N.V., PHILIPS LUMILEDS LIGHTING COMPANY, LLCInventors: Nathan F. Gardner, Michael R. Krames, Melvin B. McLaurin, Sungsoo Yi
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Publication number: 20110175112Abstract: Embodiments of the invention include a substrate comprising a host and a seed layer bonded to the host, and a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region grown over the seed layer. A variation in index of refraction in a direction perpendicular to a growth direction of the semiconductor structure is disposed between the host and the light emitting layer.Type: ApplicationFiled: January 15, 2010Publication date: July 21, 2011Applicants: KONINKLIJKE PHILIPS ELECTRONICS N.V., PHILIPS LUMILEDS LIGHTING COMPANY, LLCInventors: Aurelien J. F. DAVID, Michael R. KRAMES, Melvin B. McLAURIN
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Patent number: 7981767Abstract: The present invention provides methods for forming at least partially relaxed strained material layers on a target substrate. The methods include forming islands of the strained material layer on an intermediate substrate, at least partially relaxing the strained material islands by a first heat treatment, and transferring the at least partially relaxed strained material islands to the target substrate. The at least partial relaxation is facilitated by the presence of low-viscosity or compliant layers adjacent to the strained material layer. The invention also provides semiconductor structures having an at least partially relaxed strained material layer, and semiconductor devices fabricated using an at least partially relaxed strained material layer.Type: GrantFiled: December 22, 2008Date of Patent: July 19, 2011Assignee: S.O.I.Tec Silicon on Insulator TechnologiesInventors: Pascal Guenard, Bruce Faure, Fabrice Letertre, Michael R. Krames, Nathan F. Gardner, Melvin B. McLaurin
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Patent number: 7956360Abstract: A method of growing highly planar, fully transparent and specular m-plane gallium nitride (GaN) films. The method provides for a significant reduction in structural defect densities via a lateral overgrowth technique. High quality, uniform, thick m-plane GaN films are produced for use as substrates for polarization-free device growth.Type: GrantFiled: April 6, 2007Date of Patent: June 7, 2011Assignees: The Regents of the University of California, Japan Science and Technology AgencyInventors: Benjamin A. Haskell, Melvin B. McLaurin, Steven P. DenBaars, James Stephen Speck, Shuji Nakamura
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Publication number: 20100224852Abstract: Embodiments of the invention include a III-nitride semiconductor structure comprising a light emitting region disposed between an n-type region and a p-type region. At least one layer in the light emitting region is Bx(InyGa1-y)1-xN. In some embodiments, x is less than 14%. In some embodiments, the BN composition is selected such that the Bx(InyGa1-y)1-xN layer has the same band gap energy as a comparable InGaN layer, with a bulk lattice constant that is the same or smaller than the comparable InGaN layer.Type: ApplicationFiled: March 4, 2009Publication date: September 9, 2010Applicant: KONINKLIJKE PHILIPS ELECTRONICS N.V.Inventor: Melvin B. McLaurin
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Publication number: 20100072489Abstract: A plurality of III-nitride semiconductor structures, each comprising a light emitting layer disposed between an n-type region and a p-type region, are grown on a composite substrate. The composite substrate includes a plurality of islands of III-nitride material connected to a host by a bonding layer. The plurality of III-nitride semiconductor structures are grown on the III-nitride islands. The composite substrate may be formed such that each island of III-nitride material is at least partially relaxed. As a result, the light emitting layer of each semiconductor structure has an a-lattice constant greater than 3.19 angstroms.Type: ApplicationFiled: September 24, 2008Publication date: March 25, 2010Applicant: KONINKLIJKE PHILIPS ELECTRONICS N.V.Inventors: Melvin B. MCLAURIN, Michael R. KRAMES
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Publication number: 20100032793Abstract: The present invention provides methods for forming at least partially relaxed strained material layers on a target substrate. The methods include forming islands of the strained material layer on an intermediate substrate, at least partially relaxing the strained material islands by a first heat treatment, and transferring the at least partially relaxed strained material islands to the target substrate. The at least partial relaxation is facilitated by the presence of low-viscosity or compliant layers adjacent to the strained material layer. The invention also provides semiconductor structures having an at least partially relaxed strained material layer, and semiconductor devices fabricated using an at least partially relaxed strained material layer.Type: ApplicationFiled: December 22, 2008Publication date: February 11, 2010Inventors: Pascal Guenard, Bruce Faure, Fabrice Letertre, Michael R. Krames, Nathan F. Gardner, Melvin B. McLaurin
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Publication number: 20080163814Abstract: A method of reducing threading dislocation densities in non-polar such as a- {11-20} plane and m-{1-100} plane or semi-polar such as {10-1n} plane III-Nitrides by employing lateral epitaxial overgrowth from sidewalls of etched template material through a patterned mask. The method includes depositing a patterned mask on a template material such as a non-polar or semi polar GaN template, etching the template material down to various depths through openings in the mask, and growing non-polar or semi-polar III-Nitride by coalescing laterally from the tops of the sidewalls before the vertically growing material from the trench bottoms reaches the tops of the sidewalls. The coalesced features grow through the openings of the mask, and grow laterally over the dielectric mask until a fully coalesced continuous film is achieved.Type: ApplicationFiled: December 11, 2007Publication date: July 10, 2008Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIAInventors: Kwang Choong Kim, Mathew C. Schmidt, Feng Wu, Asako Hirai, Melvin B. McLaurin, Steven P. DenBaars, Shuji Nakamura, James S. Speck