Abstract: A solid state laser device made from a nonlinear optic quaternary alloy of Silver, Gallium, Selenium and Tellurium semiconductor material or Silver, Gallium, Sulfur and Tellurium semiconductor material. The Tellurium component in each alloy provides quaternary alloying anion modification of an underlying ternary semiconductor crystal and achieves tuning of the birefringence and tuning of the wavelength passband of the semiconductor material. The tuned quaternary alloy enables beam walkoff-free noncritical phase match operation of the laser device including use of a phase match angle supporting optimum use of the material's nonlinear properties, maximized useful length of the material crystal, room temperature wavelength changing operation, significantly increased second order nonlinear susceptibility, a factor of ten reduction in the walk-off angle and photon energy conversion efficiencies several times those usually achieved.

Abstract: A solid state laser device made from a nonlinear optic quaternary alloy of Silver, Gallium, Selenium and Tellurium semiconductor material or Silver, Gallium, Sulfur and Tellurium semiconductor material. The Tellurium component in each alloy provides quaternary alloying anion modification of an underlying ternary semiconductor crystal and achieves tuning of the birefringence and tuning of the wavelength passband of the semiconductor material. The tuned quaternary alloy enables beam walkoff-free noncritical phase match operation of the laser device including use of a phase match angle supporting optimum use of the material's nonlinear properties, maximized useful length of the material crystal, room temperature wavelength changing operation, significantly increased second order nonlinear susceptibility, a factor of ten reduction in the walk-off angle and photon energy conversion efficiencies several times those usually achieved.

Abstract: A method for producing a semiconductor crystal which is highly transparent in the 1-3 .mu. spectral range is described which comprises the steps of exposing the crystal to high energy ionizing gamma radiation to produce within the crystal energetic photo electrons which produces defect donors to cancel acceptors existing in the as-grown crystal.