Abstract: An anti-reflective hard mask layer left on a radiation-blocking layer during fabrication of a reticle provides functionality when the reticle is used in a semiconductor device manufacturing process.

Abstract: We are able to reduce the average process bias in a patterned reticle by treating the developed, patterned photoresist which is used to transfer a pattern to the reticle with a silicon-containing reagent prior to the pattern transfer. The process bias is a measure of the difference between a nominal feature critical dimension (CD) produced in a patterned reticle and the nominal isofocal CD for the feature. Improvement of the average process bias is directly related to an improved resolution in the mask features. The reduction in average process bias achievable using the method of the invention typically ranges from about 30% to about 70%. This reduction in average process bias enables the printing of smaller features.

Abstract: The invention relates to a method of improving control over the dimensions of a patterned photoresist, which enables better control of the critical dimensions of a photomask or reticle which is fabricated using the patterned photoresist. In addition, the method may be used to enable improved control over the dimensions of a semiconductor device fabricated using a patterned photoresist. In particular, a patterned photoresist is treated with an etchant plasma to reshape the surface of the patterned photoresist, where reshaping includes the removal of “t”-topping at the upper surface of the patterned resist, the removal of standing waves present on patterned surfaces, and the removal of feet which may be present at the base of the patterned photoresist, where the photoresist contacts an underlying layer such as an ARC layer.

Abstract: In photomask making, the environmental sensitivity of a chemically amplified photoresist is eliminated, or at least substantially reduced, by overcoating the photoresist with a thin coating (topcoat) of a protective but transmissive material. To provide improved stability during the long time period required for direct writing of a photomask pattern, typically in the range of about 20 hours, the protective topcoat material is pH adjusted to be as neutral in pH as possible, depending on other process variable requirements. For example, a pH adjusted to be in the range from about 5 to about 8 is particularly helpful. Not only is the stability of the chemically amplified photoresist better during direct writing when the protective topcoat is pH adjusted, but a photoresist-coated substrate with pH adjusted topcoat over its surface can be stored longer prior to imaging without adverse consequences.

Abstract: We have reduced the critical dimension bias for reticle fabrication. Pattern transfer to the radiation-blocking layer of the reticle substrate essentially depends upon use of a hard mask to which the pattern is transferred from a photoresist. The photoresist pull back which occurs during pattern transfer to the hard mask is minimalized. In addition, a hard mask material having anti-reflective properties which are matched to the reflective characteristics of the radiation-blocking layer enables a reduction in critical dimension size and an improvement in the pattern feature integrity in the hard mask itself. An anti-reflective hard mask layer left on the radiation-blocking layer provides functionality when the reticle is used in a semiconductor device manufacturing process.

Abstract: A transducer and method for imparting vibrational signals to a structure are disclosed. In one embodiment, a set of piezoelectric disks are constructed in conjunction with a deformable housing to impart controlled distortions to the structure, such as to a well pipe string. Torsional forces are applied to the structure due to the orientation of the piezoelectric material relative to the electric field applied thereto. The piezoelectric material is placed in layers, with the polarization axis orthogonal to the direction of the electric field. Alternate layers are oriented in opposing directions, and alternating electrodes are connected together, so that each layer cooperates with the others to twist the housing in the same direction. To improve transmission, the apparatus can be tuned to a frequency determined by a spectrum analysis of the pipe string.

Abstract: A transducer and method for imparting vibrational signals to a structure are disclosed. The transducer according to one embodiment includes a set of piezoelectric disks placed within a deformable housing that has longitudinal slits with rounded terminations. Electrodes are placed adjacent to the piezoelectric disks in such a manner that an electrical signal causes the piezoelectric disks to expand and contract along the longitudinal axis of the transducer. The longitudinal slits in the housing allow its expansion in a direction substantially parallel to its longitudinal axis, while the rounded terminations reduce the tendency of the housing to crack as a result of use, enabling high frequency operation over extended periods of time.

Abstract: A transducer and method for imparting vibrational signals to a structure are disclosed. In one embodiment, a set of piezoelectric disks are constructed in conjunction with a deformable housing to impart controlled distortions to the structure, such as to a well pipe string. Torsional forces are applied to the structure due to the orientation of the piezoelectric material relative to the electric field applied thereto. The piezoelectric material is placed in layers, with the polarization axis orthogonal to the direction of the electric field. Alternate layers are oriented in opposing directions, and alternating electrodes are connected together, so that each layer cooperates with the others to twist the housing in the same direction. To improve transmission, the apparatus can be tuned to a frequency determined by a spectrum analysis of the pipe string.