Patents by Inventor Melvin W. Montgomery
Melvin W. Montgomery has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20170040228Abstract: Methods and compositions are provided for reducing or eliminating charge buildup during scanning electron microscopy (SEM) metrology of a critical dimension (CD) in a structure produced by lithography. An under layer is utilized that comprises silicon in the construction of the structure. When the lithography structure comprising the silicon-comprising under layer is scanned for CDs using SEM, the under layer reduces or eliminates charge buildup during SEM metrological observations.Type: ApplicationFiled: October 20, 2016Publication date: February 9, 2017Inventors: Melvin W. Montgomery, Cecilia A. Montgomery, Benjamin D. Bunday
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Patent number: 7244334Abstract: The invention relates to a method of improving control over the dimensions of a patterned photoresist, which enables better control of the critical dimensions of a photomask or reticle which is fabricated using the patterned photoresist. In addition, the method may be used to enable improved control over the dimensions of a semiconductor device fabricated using a patterned photoresist. In particular, a patterned photoresist is treated with an etchant plasma to reshape the surface of the patterned photoresist, where reshaping includes the removal of âtâ-topping at the upper surface of the patterned resist, the removal of standing waves present on patterned surfaces, and the removal of feet which may be present at the base of the patterned photoresist, where the photoresist contacts an underlying layer such as an ARC layer.Type: GrantFiled: July 15, 2005Date of Patent: July 17, 2007Assignee: Applied Materials, Inc.Inventors: Alex Buxbaum, Melvin W. Montgomery
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Patent number: 7067227Abstract: The disclosure pertains to a photoresist composition and a method of using the photoresist in the fabrication of reticles or features on a semiconductor substrate. The photoresist composition and the method are designed to reduce the variation in critical dimension of features across a surface of a substrate, where the variation in critical dimension is a result of localized resist loading. The photoresist composition is useful when the imaging system is G-line, H-line, or I-line, and the photoresist composition includes a sensitizer which works in combination with a DUV photoresist including a PAC, to sensitize the photoresist to the G-line, H-line and I-line imaging.Type: GrantFiled: May 23, 2002Date of Patent: June 27, 2006Assignee: Applied Materials, Inc.Inventors: Melvin W. Montgomery, Christopher Hamaker
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Patent number: 6998206Abstract: One principal embodiment of the disclosure pertains to a method of optically fabricating a photomask using a direct write continuous wave laser, comprising a series of steps including: applying an organic antireflection coating over a surface of a photomask which includes a chrome-containing layer; applying a chemically-amplified DUV photoresist over the organic antireflection coating; post apply baking the DUV photoresist over a specific temperature range; exposing a surface of the DUV photoresist to the direct write continuous wave laser; and, post exposure baking the imaged DUV photoresist over a specific temperature range. The direct write continuous wave laser preferably operates at a wavelength of 244 nm or 257 nm. In an alternative embodiment, the organic antireflection coating may be applied over an inorganic antireflection coating which overlies the chrome containing layer.Type: GrantFiled: January 15, 2004Date of Patent: February 14, 2006Assignee: Applied Materials, Inc.Inventors: Scott Fuller, Melvin W. Montgomery, Jeffrey A. Albelo, Alex Buxbaum
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Patent number: 6931619Abstract: The invention relates to a method of improving control over the dimensions of a patterned photoresist, which enables better control of the critical dimensions of a photomask or reticle which is fabricated using the patterned photoresist. In addition, the method may be used to enable improved control over the dimensions of a semiconductor device fabricated using a patterned photoresist. In particular, a patterned photoresist is treated with an etchant plasma to reshape the surface of the patterned photoresist, where reshaping includes the removal of âtâ-topping at the upper surface of the patterned resist, the removal of standing waves present on patterned surfaces, and the removal of feet which may be present at the base of the patterned photoresist, where the photoresist contacts an underlying layer such as an ARC layer.Type: GrantFiled: March 24, 2003Date of Patent: August 16, 2005Assignee: Applied Materials, Inc.Inventors: Alex Buxbaum, Melvin W. Montgomery
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Publication number: 20040146790Abstract: One principal embodiment of the disclosure pertains to a method of optically fabricating a photomask using a direct write continuous wave laser, comprising a series of steps including: applying an organic antireflection coating over a surface of a photomask, which includes a chrome-containing layer; applying a chemically-amplified DUV photoresist over the organic antireflection coating; post apply baking the DUV photoresist over a specific temperature range; exposing a surface of the DUV photoresist to the direct write continuous wave laser; and, post exposure baking the imaged DUV photoresist over a specific temperature range. The direct write continuous wave laser preferably operates at a wavelength of 244 nm or 257 nm. In an alternative embodiment, the organic antireflection coating may be applied over an inorganic antireflection coating which overlies the chrome containing layer.Type: ApplicationFiled: January 15, 2004Publication date: July 29, 2004Inventors: Scott Fuller, Melvin W. Montgomery, Jeffrey A. Albelo, Alex Buxbaum
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Patent number: 6703169Abstract: One principal embodiment of the disclosure pertains to a method of optically fabricating a photomask using a direct write continuous wave laser, comprising a series of steps including: applying an organic antireflection coating over a surface of a photomask which includes a chrome-containing layer; applying a chemically-amplified DUV photoresist over the organic antireflection coating; post apply baking the DUV photoresist over a specific temperature range; exposing a surface of the DUV photoresist to the direct write continuous wave laser; and, post exposure baking the imaged DUV photoresist over a specific temperature range. The direct write continuous wave laser preferably operates at a wavelength of 244 nm or 257 nm. In an alternative embodiment, the organic antireflection coating may be applied over an inorganic antireflection coating which overlies the chrome containing layer.Type: GrantFiled: July 23, 2001Date of Patent: March 9, 2004Assignee: Applied Materials, Inc.Inventors: Scott Fuller, Melvin W. Montgomery, Jeffrey A. Albelo, Alex Buxbaum
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Publication number: 20030219675Abstract: The disclosure pertains to a photoresist composition and a method of using the photoresist in the fabrication of reticles or features on a semiconductor substrate. The photoresist composition and the method are designed to reduce the variation in critical dimension of features across a surface of a substrate, where the variation in critical dimension is a result of localized resist loading. The photoresist composition is useful when the imaging system is G-line, H-line, or I-line, and the photoresist composition includes a sensitizer which works in combination with a DUV photoresist including a PAC, to sensitize the photoresist to the G-line, H-line and I-line imaging.Type: ApplicationFiled: May 23, 2002Publication date: November 27, 2003Applicant: APPLIED MATERIALS, INC.Inventors: Melvin W. Montgomery, Christopher Hamaker
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Publication number: 20030180634Abstract: The invention relates to a method of improving control over the dimensions of a patterned photoresist, which enables better control of the critical dimensions of a photomask or reticle which is fabricated using the patterned photoresist. In addition, the method may be used to enable improved control over the dimensions of a semiconductor device fabricated using a patterned photoresist. In particular, a patterned photoresist is treated with an etchant plasma to reshape the surface of the patterned photoresist, where reshaping includes the removal of “t”-topping at the upper surface of the patterned resist, the removal of standing waves present on patterned surfaces, and the removal of feet which may be present at the base of the patterned photoresist, where the photoresist contacts an underlying layer such as an ARC layer.Type: ApplicationFiled: March 24, 2003Publication date: September 25, 2003Inventors: Alex Buxbaum, Melvin W. Montgomery
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Patent number: 6605394Abstract: The disclosure pertains to a method of optically fabricating a photomask using a direct write continuous wave laser, comprising a series of steps including applying an organic antireflection coating over a chrome-containing layer; applying a chemically-amplified DUV photoresist over the organic antireflection coating; and exposing a surface of the DUV photoresist to the direct write continuous wave laser. The direct write continuous wave laser operates at a wavelength of 244 nm or 257 nm. In an alternative embodiment, the organic antireflection coating may be applied over an inorganic antireflection coating which overlies the chrome containing layer.Type: GrantFiled: May 3, 2001Date of Patent: August 12, 2003Assignee: Applied Materials, Inc.Inventors: Melvin W. Montgomery, Jeffrey A Albelo
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Patent number: 6582861Abstract: The invention relates to a method of improving control over the dimensions of a patterned photoresist, which enables better control of the critical dimensions of a photomask or reticle which is fabricated using the patterned photoresist. In addition, the method may be used to enable improved control over the dimensions of a semiconductor device fabricated using a patterned photoresist. In particular, a patterned photoresist is treated with an etchant plasma to reshape the surface of the patterned photoresist, where reshaping includes the removal of “t”-topping at the upper surface of the patterned resist, the removal of standing waves present on patterned surfaces, and the removal of feet which may be present at the base of the patterned photoresist, where the photoresist contacts an underlying layer such as an ARC layer.Type: GrantFiled: March 16, 2001Date of Patent: June 24, 2003Assignee: Applied Materials, Inc.Inventors: Alex Buxbaum, Melvin W. Montgomery
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Publication number: 20030027083Abstract: One principal embodiment of the disclosure pertains to a method of optically fabricating a photomask using a direct write continuous wave laser, comprising a series of steps including: applying an organic antireflection coating over a surface of a photomask which includes a chrome-containing layer; applying a chemically-amplified DUV photoresist over the organic antireflection coating; post apply baking the DUV photoresist over a specific temperature range; exposing a surface of the DUV photoresist to the direct write continuous wave laser; and, post exposure baking the imaged DUV photoresist over a specific temperature range. The direct write continuous wave laser preferably operates at a wavelength of 244 nm or 257 nm. In an alternative embodiment, the organic antireflection coating may be applied over an inorganic antireflection coating which overlies the chrome containing layer.Type: ApplicationFiled: July 23, 2001Publication date: February 6, 2003Applicant: Applied Materials, Inc.Inventors: Scott Fuller, Melvin W. Montgomery, Jeffrey A. Albelo, Alex Buxbaum
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Publication number: 20020182514Abstract: The disclosure pertains to a method of optically fabricating a photomask using a direct write continuous wave laser, comprising a series of steps including applying an organic antireflection coating over a chrome-containing layer; applying a chemically-amplified DUV photoresist over the organic antireflection coating; and exposing a surface of the DUV photoresist to the direct write continuous wave laser. The direct write continuous wave laser operates at a wavelength of 244 nm or 257 nm. In an alternative embodiment, the organic antireflection coating may be applied over an inorganic antireflection coating which overlies the chrome containing layer.Type: ApplicationFiled: May 3, 2001Publication date: December 5, 2002Applicant: APPLIED MATERIALS, INC.Inventors: Melvin W. Montgomery, Jeffrey A. Albelo
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Publication number: 20020160274Abstract: The invention relates to a method of improving control over the dimensions of a patterned photoresist, which enables better control of the critical dimensions of a photomask or reticle which is fabricated using the patterned photoresist. In addition, the method may be used to enable improved control over the dimensions of a semiconductor device fabricated using a patterned photoresist. In particular, a patterned photoresist is treated with an etchant plasma to reshape the surface of the patterned photoresist, where reshaping includes the removal of “t”-topping at the upper surface of the patterned resist, the removal of standing waves present on patterned surfaces, and the removal of feet which may be present at the base of the patterned photoresist, where the photoresist contacts an underlying layer such as an ARC layer.Type: ApplicationFiled: March 16, 2001Publication date: October 31, 2002Applicant: APPLIED MATERIALS, INC.Inventors: Alex Buxbaum, Melvin W. Montgomery
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Patent number: 6258514Abstract: An apparatus and method for manufacturing a device using lithography. An underlayer is deposited on a first surface, the underlayer of which is composed of a first resist material adapted to be substantially free of photoacid generators and which includes an acid labile polymer group. A topcoat layer is deposited on top of the underlayer which is composed of a second resist material adapted to be substantially free of acid labile polymer groups and including a photoacid generator. Upon exposure of a portion of the topcoat layer to radiation through to form an exposed region and an unexposed region of a lithographic pattern, photoacid is generated by the topcoat layer and delivered to an interface between the underlayer and the topcoat layer such that the generated photoacid at the exposed region deprotects the acid labile polymer groups at the underlayer top surface to form a deprotected region and a protected region.Type: GrantFiled: March 10, 1999Date of Patent: July 10, 2001Assignee: LSI Logic CorporationInventor: Melvin W. Montgomery
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Patent number: 5362599Abstract: Positive photoresist compositions and methods using the photoresist compositions for making submicron patterns in the production of semiconductor devices are disclosed. The photoresists contain sensitizers that are mixed naphthoquinonediazide 4- and 5- sulfonic acid esters of bis and tris(mono, di and trihydroxyphenyl) alkanes.Type: GrantFiled: November 14, 1991Date of Patent: November 8, 1994Assignee: International Business Machines CorporationsInventors: Christopher J. Knors, Steve S. Miura, Melvin W. Montgomery, Wayne M. Moreau, Randolph J. Smith
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Patent number: 5338818Abstract: A method of synthesizing a silicon-containing positive resist for use as a imaging layer in DUV, x-ray, or e-beam lithography is disclosed. The resist contains arylsilsesquioxane polymers with acid sensitive pendant groups as dissolution inhibitors and a photoacid generator.Type: GrantFiled: September 10, 1992Date of Patent: August 16, 1994Assignee: International Business Machines CorporationInventors: William R. Brunsvold, Premlatha Jagannathan, Steve S. Miura, Melvin W. Montgomery, Harbans S. Sachdev, Ratnam Sooriyakumaran
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Patent number: 5272042Abstract: Disclosed is a positive photoresist. The photoresist has as its polymeric component a substantially water and base insoluble, photolabile polymer. The photoresist further includes a photo acid generator that is capable of forming a strong acid. This photo acid generator may be a sulfonate ester derived from a N-hydroxyamide, or a N-hydroxyimide. Finally, the photoresist composition includes an appropriate photosensitizer.Type: GrantFiled: September 17, 1991Date of Patent: December 21, 1993Assignee: International Business Machines CorporationInventors: Robert D. Allen, William R. Brunsvold, Burton J. Carpenter, William D. Hinsberg, Joseph LaTorre, Michael G. McMaster, Melvin W. Montgomery, Wayne M. Moreau, Logan L. Simpson, Robert J. Tweig, Gregory M. Wallraff
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Patent number: 5164278Abstract: Acid sensitized photoresists with enhanced photospeed are provided. The photoresist compositions include a polymer binder and/or a polymerizable compound and an acid sensitive group which enables patterning of the resist composition, and acid generating photoinitiator, and an hydroxy aromatic compound which enhances the speed of the resist composition under imaging radiation.Type: GrantFiled: March 1, 1990Date of Patent: November 17, 1992Assignee: International Business Machines CorporationInventors: William R. Brunsvold, Christopher J. Knors, Melvin W. Montgomery, Wayne M. Moreau, Kevin M. Welsh
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Patent number: 5023164Abstract: Highly sensitive, highly absorbing deep ultraviolet and vacuum ultraviolet resists which comprise a novolak resin protected with an acid labile group and a photoinitiator which generates a strong acid upon exposure to deep ultraviolet or vacuum ultraviolet radiation. The exposed resists are reacted with organometallic compounds to form reactive ion etch resistant patterns.Type: GrantFiled: October 23, 1989Date of Patent: June 11, 1991Assignee: International Business Machines CorporationInventors: William R. Brunsvold, Philip Chiu, Willard E. Conley, Jr., Dale M. Crockatt, Melvin W. Montgomery, Wayne M. Moreau