Abstract: The present invention is directed to the fabrication of thin aluminum anode batteries using a highly reproducible process that enables high volume manufacturing of the galvanic cells. A thin aluminum anode galvanic cell having a meshed structure is provided which includes a catalytic metal layer positioned on a patterned silicon substrate, an etched dielectric layer positioned to cover the catalytic metal layer, the catalytic metal layer serving as an etch stop for the etched dielectric layer and an etched aluminum layer positioned to cover the dielectric layer, the dielectric layer serving as an etch stop for the etched aluminum layer.

Abstract: The present invention is directed to the fabrication of thin aluminum anode batteries using a highly reproducible process that enables high volume manufacturing of the galvanic cells. A method of fabricating a thin aluminum anode galvanic cell is provided, the method including, depositing a layer of catalytic metal on a surface of a first substrate, depositing and patterning a benzocyclobutene layer to form a reservoir having four sidewalls of benzocyclobutene on the surface of the catalytic layer, depositing a layer of aluminum on a surface of a second substrate and bonding the first substrate to the second substrate to form a galvanic cell bounded by the catalytic metal layer and the aluminum layer and separated by the reservoir walls of benzocyclobutene, the second substrate positioned in overlying relation to contact the four sidewalls of the reservoir with the aluminum layer facing the catalytic layer.

Abstract: The present invention is directed to the fabrication of thin aluminum anode batteries using a highly reproducible process that enables high volume manufacturing of the galvanic cells. A thin aluminum anode galvanic cell having a meshed structure is provided which includes a catalytic metal layer positioned on a patterned silicon substrate, an etched dielectric layer positioned to cover the catalytic metal layer, the catalytic metal layer serving as an etch stop for the etched dielectric layer and an etched aluminum layer positioned to cover the dielectric layer, the dielectric layer serving as an etch stop for the etched aluminum layer.

Abstract: The present invention is directed to the fabrication of thin aluminum anode batteries using a highly reproducible process that enables high volume manufacturing of the galvanic cells. A method of fabricating a thin aluminum anode galvanic cell is provided, the method including, depositing a layer of catalytic metal on a surface of a first substrate, depositing and patterning a benzocyclobutene layer to form a reservoir having four sidewalls of benzocyclobutene on the surface of the catalytic layer, depositing a layer of aluminum on a surface of a second substrate and bonding the first substrate to the second substrate to form a galvanic cell bounded by the catalytic metal layer and the aluminum layer and separated by the reservoir walls of benzocyclobutene, the second substrate positioned in overlying relation to contact the four sidewalls of the reservoir with the aluminum layer facing the catalytic layer.

Abstract: The present invention is directed to the fabrication of thin aluminum anode batteries using a highly reproducible process that enables high volume manufacturing of the galvanic cells. A method of fabricating a thin aluminum anode galvanic cell is provided, the method comprising, forming a recess in the silicon wafer, the recess having no more than three sidewalls, depositing a catalytic metal layer on a bottom surface of the recess, positioning a double-side sticky tape layer having a bottom side positioned to contact the no more than three sidewalls of the recess and positioning an aluminum foil layer to contact a top side of the double-side sticky tape layer and in overlying relation to the recess, thereby forming the galvanic cell.

Abstract: The present invention is directed to the fabrication of thin aluminum anode batteries using a highly reproducible process that enables high volume manufacturing of the galvanic cells. A method of fabricating a thin aluminum anode galvanic cell is provided, the method comprising, forming a recess in the silicon wafer, the recess having no more than three sidewalls, depositing a catalytic metal layer on a bottom surface of the recess, positioning a double-side sticky tape layer having a bottom side positioned to contact the no more than three sidewalls of the recess and positioning an aluminum foil layer to contact a top side of the double-side sticky tape layer and in overlying relation to the recess, thereby forming the galvanic cell.

Abstract: The present invention is directed to the fabrication of thin aluminum anode batteries using a highly reproducible process that enables high volume manufacturing of the galvanic cells. In the present invention, semiconductor fabrication methods are used to fabricate aluminum galvanic cells, wherein a catalytic material to be used as the cathode is deposited on a substrate and an insulating spacing material is deposited on the cathode and patterned using photolithography. The spacing material can either be used as a sacrificial layer to expose the electrodes or serve as a support for one of the electrodes. Similarly, the aluminum anode may be deposited and patterned on another substrate and bonded to the first substrate, or can be deposited directly on the insulating material prior to patterning. The cell is packaged and connected to a delivery system to provide delivery of the electrolyte when activation of the cell is desired.

Abstract: The present invention is directed to the fabrication of thin aluminum anode batteries using a highly reproducible process that enables high volume manufacturing of the galvanic cells. In the present invention, semiconductor fabrication methods are used to fabricate aluminum galvanic cells, wherein a catalytic material to be used as the cathode is deposited on a substrate and an insulating spacing material is deposited on the cathode and patterned using photolithography. The spacing material can either be used as a sacrificial layer to expose the electrodes or serve as a support for one of the electrodes. Similarly, the aluminum anode may be deposited and patterned on another substrate and bonded to the first substrate, or can be deposited directly on the insulating material prior to patterning. The cell is packaged and connected to a delivery system to provide delivery of the electrolyte when activation of the cell is desired.