Abstract: A biological or chemical optical sensing device comprises at least one planar micro-resonator structure included in a light emitting waveguide, and at least one biological or chemical probe bound to at least a part of the micro-resonator structure, the probe operative to bind specifically and selectively to a respective target substance, whereby the specific and selective binding results in a parameter change in light emitted from the waveguide. In one embodiment, the micro-resonator is linear. In some embodiments, the sensing device is active, the waveguide including at least one photoluminescent material operative to be remotely pumped by a remote optical source, and the parameter change, which may include a spectral change or a quality-factor change, may be remotely read by an optical reader.

Abstract: A microlens reflector (200) and light coupler comprises a material transparent to light of a predetermined wavelength bound by an envelope with a curved section (202) and at least two non-parallel flat sections (204, 206), the curved section (202) operative to reflect internally light entering the component through one flat section (206), the reflected light directed to leave the component through its other flat section (204). The microlens reflector can reflect and couple light from one optical element into another optical element, e.g. from a waveguide into a detector, and from a light source into a waveguide. Arrays of integrated microlens reflectors (700) may be used to couple optical fibers to on-chip optical waveguides in N×M optical cross-connects and switches, providing simple, true 3-dimensional optical coupling architectures.

Abstract: An electrical energy storage device includes a substrate having an outer surface and having a plurality of cavities communicating with the outer surface. The cavities have interior cavity surfaces. A first electrode layer is deposited at least over the interior cavity surfaces. An electrolyte separator layer is formed over the first electrode layer so as to fill the cavities and to extend over the outer surface of the planar substrate. A second electrode layer is formed over the electrolyte separator layer on the outer surface of the planar substrate.

Abstract: A biological or chemical optical sensing device comprises at least one planar micro-resonator structure included in a light emitting waveguide, and at least one biological or chemical probe bound to at least a part of the micro-resonator structure, the probe operative to bind specifically and selectively to a respective target substance, whereby the specific and selective binding results in a parameter change in light emitted from the waveguide. In one embodiment, the micro-resonator is linear. In some embodiments, the sensing device is active, the waveguide including at least one photoluminescent material operative to be remotely pumped by a remote optical source, and the parameter change, which may include a spectral change or a quality-factor change, may be remotely read by an optical reader.

Abstract: An electrical energy storage device (20) includes a microchannel plate (MCP) (22) having channels (24) formed therein, the channels having surface areas. Thin films (26) are formed over the surface areas and define an anode (34,38), a cathode (34,38), and a solid electrolyte (36) disposed between the anode and the cathode.

Abstract: Osteogenesis and osseointegration promotion and maintenance devices for osseous implants include an implant member having a first electrode, an inlaid second electrode positioned on the member so that it is electrically isolated from and substantially flush with the member surface, and an electrical stimulation mechanism preferably located at the member and operative to provide electrical stimulation signals to endosseous tissue surrounding the implant through the first and second electrodes. The first electrode may be the member itself or a second inlaid electrode. The implant is thus electrically functionalized for osteogenesis and osseointgration acceleration. The device is applicable to both non-dental and dental implants. In all embodiments, the use of inlaid electrode(s) enables the general appearance, external surface and mechanical integrity of the implant to be left essentially unchanged.

Abstract: A displacement sensor comprising at least one pair of co-planar photonic crystal waveguide (PCWG) sections aligned along or parallel to a common axis and separated by a gap, one PCWG section of a pair operative to perform a displacement relative to the other section of the pair. In some embodiments, the sensor is linear, comprising two PCWG sections sperated by a gap that forms a cross PCWG, the displacement sensing performed preferrably differentially between two edges of the cross PCWG. In other embodiments, the sensor includes Mach Zehnder Interferometer (MZI) configurations with gaps between fixed and moving PCWG sections. Displacement induced changes in the gap widths are reflected in changes in an output parameter of the MZI.

Abstract: A dynamically controllable photonic crystal comprises at least one micro-cavity, and electrical means to induce carrier refraction in the vicinity of the micro-cavity. In the exemplary case when the photonic crystal is implemented in a semiconductor substrate, localized carrier refraction is achieved using field induced carrier injection or depletion into a carrier concentration column surrounding the micro-cavity. Preferably, if the substrate is silicon, the injection and depletion is achieved using various two or three terminal, unipolar or bipolar structures.

Abstract: A method for producing a microbattery including providing a conductive substrate, forming a thin film cathodic layer on at least one surface of the conductive substrate, subsequently forming a thin film electrolyte layer over the cathodic layer and subsequently forming a thin film anodic layer over the electrolyte layer

Abstract: A dynamically controllable photonic crystal comprises at least one micro-cavity, and electrical means to induce carrier refraction in the vicinity of the micro-cavity. In the exemplary case when the photonic crystal is implemented in a semiconductor substrate, localized carrier refraction is achieved using field induced carrier injection or depletion into a carrier concentration column surrounding the micro-cavity. Preferably, if the substrate is silicon, the injection and depletion is achieved using various two or three terminal, unipolar or bipolar structures.

Abstract: A nucleic acid accumulation analyzing chip comprising an optical waveguide having a radiation input port and a radiation output port, the optical waveguide being formed with at least one optical microcavity along its optical path, at least one oligonucleotide being immobilized to the optical waveguide in the microcavity, such that when the at least one oligonucleotide is contacted with reaction reagents under conditions allowing a nucleic acid accumulation reaction to take place, accumulated nucleic acid is detectable by providing radiation at the radiation input port of the optical waveguide and monitoring radiation signal modulation at the radiation output port of the optical waveguide.

Abstract: A nucleic acid accumulation analyzing chip comprising an optical waveguide having a radiation input port and a radiation output port, the optical waveguide being formed with at least one optical microcavity along its optical path, at least one oligonucleotide being immobilized to the optical waveguide in the microcavity, such that when the at least one oligonucleotide is contacted with reaction reagents under conditions allowing a nucleic acid accumulation reaction to take place, accumulated nucleic acid is detectable by providing radiation at the radiation input port of the optical waveguide and monitoring radiation signal modulation at the radiation output port of the optical waveguide.

Abstract: Thin-film micro-electrochemical energy storage cells (MEESC) such as microbatteries and double-layer capacitors (DLC) are provided. The MEESC comprises two thin layer electrodes, an intermediate thin layer of a solid electrolyte and optionally, a fourth thin current collector layer; said layers being deposited in sequence on a surface of a substrate. The MEESC is characterized in that the substrate is provided with a plurality of through cavities of arbitrary shape, with high aspect ratio. By using the substrate volume, an increase in the total electrode area per volume is accomplished.

Abstract: The present invention pertains to a method of controlling the microstructure and service properties of electrically conductive transparent and other materials by passing an electrical current through the materials while simultaneously employing an additional process. Examples of the additional process include heating, sintering, deposition, casting, electrical arcing, and immersion in liquids. In one embodiment of the present invention, the additional process is deposition of a transparent conductive coating material while passing a current through the deposited coating along the surface of the coated material.

Abstract: A method of simultaneously forming a gallium arsenide p-i-n structure having p, i, and n regions, which includes heating to dissolve gallium arsenide in a solvent such as bismuth or gallium to form a saturated solution of gallium arsenide in the solvent, contacting the solution with a gaseous mixture, which mixture includes hydrogen, water vapor and products of reactions between the hydrogen and the water vapor with the solvent and with silicon dioxide, to form a contacted solution, coating a suitably selected substrate, such as a group III-V compound such as gallium arsenide, with the contacted solution, cooling the coated substrate to precipitate gallium arsenide from the contacted solution onto the substrate, and removing the substrate coated with a layer of gallium arsenide having a p-i-n structure which constitutes the product having an i region dopant concentration of less than about 10.sup.12 cm.sup.-3.

Abstract: A controlled capacitor system, which includes a capacitor element (C1) and a forward-biased diode element (D2) connected in series with the capacitor element (C1). The system is such that the diode element (D2) has a capacitance which is less than the capacitance of the capacitance of the capacitor element (C1) when the diode element (D2) is under zero bias. The capacitance of the diode element (D2) is controlled by varying the forward current (I2) through the diode (D2). The forward current (I2) acting to control the capacitance of the diode element is selected such that the capacitance of the diode element (D2) is smaller than the capacitance of the capacitor element (C1) when the current (I2) through the diode element (D2) is below a minimum value. The capacitance of the diode element (D2) is bigger than the capacitance of the capacitor element (C1) when the current (I2) through the diode element (D2) exceeds a maximum value.

Abstract: A power GaAs Schottky diode with a chemically deposited Ni barrier having a reverse breakdown voltage of 140 V, a forward voltage drop at 50 A/cm.sup.2 of 0.7 V at 23.degree. C., 0.5 V at 150.degree. C. and 0.3 V at 250.degree. C. and having a reverse leakage current density at -50 V of 0.1 .mu.A/cm.sup.2 at 23.degree. C. and 1 mA/cm.sup.2 at 150.degree. C. The high-voltage high-speed power Schottky semiconductor device is made by chemically depositing a nickel barrier electrode on a semiconductor which includes gallium arsenide and then etching the device to create side portions which are treated and protected to create the Schottky device.

Abstract: The present invention pertains to a method of controlling the microstructure and service properties of electrically conductive transparent and other materials by passing an electrical current through the materials while simultaneously employing an additional process. Examples of the additional process include heating, sintering, deposition, casting, electrical arcing, and immersion in liquids. In one embodiment of the present invention, the additional process is deposition of a transparent conductive coating material while passing a current through the deposited coating along the surface of the coated material.