Abstract: A data storage device includes a memory device and a controller. Mapping circuitry is configured, in response to receiving data, to apply a one-to-many mapping to each group of multiple groups of bits in the received data to generate mapped data that includes multiple groups of mapped bits. Storage elements of the memory device are partitioned into multiple skip groups and the mapped bits of each group of mapped bits are interleaved across the skip groups such that different bits of a group of mapped bits are written into different skip groups.

Abstract: A data storage device may include a memory die. The memory die includes a memory and a latch. A method may include receiving a command corresponding to a write operation to write information to the memory. The method may further include loading a set of bits into the latch prior to receiving the information at the memory die. The set of bits includes at least a first bit having a first value and a second bit having a second value that is different than the first value. The method further includes receiving the information at the memory die and overwriting at least a portion of the set of bits at the latch with the information.

Abstract: A conference call system and method thereof for controlling audio channels in a conference call. In particular, the conference call system enables a common communication session in which multiple participants may control audio settings associated with other participants. Selective audio control of the associated channel may be used for muting or unmuting a specific communication device, adjusting the volume level of an audio signal received from a specific communication device, altering various additional parameters of an audio signal received from a specific communication device, and the like.

Abstract: Methods and apparatus for managing a joint slide show by a source user terminal in communication with one or more remote user terminal(s) are disclosed herein. During the slide show, a plurality of picture files are shown on the source user terminal. One or more slide-show display-transitions are performed at the source user terminal by replacing, at a slide-show display-location of the source user terminal, a pre-transition picture file with a post-transition picture file. In some embodiments, (i) for each slide-show display-transition, a respective post-transition picture file is sent from the source terminal to each remote user terminal in advance of the slide-show display-transition and/or (ii) each of the slide-show display-transitions is contingent upon, and performed only after meeting a condition related to a number of remote user-terminals from which the source terminal has received a confirmation message confirming receipt of the respective post-transition picture file.

Abstract: A method of writing data is performed in a data storage device with a controller and a memory. The memory includes latches and multiple storage elements and is operative to store a first number of bits in each storage element according to a first mapping of sequences of bits to states of the storage elements. The method includes loading data bits into the latches within the memory and generating manipulated data bits in the latches by manipulating designated data bits in the latches using one or more logical operations. The method also includes storing sets of the manipulated data bits to respective storage elements of the group of storage elements according to the first mapping. The designated data bits correspond to states of the respective storage elements according to a second mapping of sequences of bits to states. The second mapping is different than the first mapping.

Abstract: A data storage device may include a memory die. The memory die includes a memory and a latch. A method may include receiving a command corresponding to a write operation to write information to the memory. The method may further include loading a set of bits into the latch prior to receiving the information at the memory die. The set of bits includes at least a first bit having a first value and a second bit having a second value that is different than the first value. The method further includes receiving the information at the memory die and overwriting at least a portion of the set of bits at the latch with the information.

Abstract: A method of reading data at a data storage device that includes a non-volatile memory having a three-dimensional (3D) configuration includes identifying a first set of storage elements of a first word line of the non-volatile memory that satisfy a condition. The condition is based on one or more states of one or more storage elements. The method includes determining a first read voltage corresponding to the first set of storage elements of the first word line and determining a second read voltage corresponding to a second set of storage elements of the first word line that do not satisfy the condition. The method includes reading data from the first word line by applying the first read voltage to the first set of storage elements of the first word line and applying the second read voltage to the second set of storage elements of the first word line.

Abstract: Methods and apparatus for displaying an overlay on top of media content are disclosed herein. In some embodiments, a request for presentation of an overlay on top of the media content at a target position on the display screen is handled (e.g. by a local terminal) in accordance with a dynamically determined extent of interference caused by the overlay to the media content. In some embodiments, a modification to at least one overlay attribute of the overlay is computed in accordance with the determined extent of interference, and the modified overlay is display over the underlying media content. Examples of ‘overlay attributes’ include size, color, transparency and shape.

Abstract: A method includes adjusting a counter value to indicate an access operation to a first portion of a non-volatile memory. The access operation is an erase operation or a write operation. The adjusted counter value indicates that a number of access operations to the first portion have been performed since an access operation to a second portion of the non-volatile memory has been performed. The method also includes selectively initiating a remedial action to the second portion in response to a comparison of the number of access operations to a threshold.

Abstract: Methods for reducing program disturb in non-volatile memories are described. In some embodiments, a non-volatile storage system may acquire a first set of intermediate data to be written to a plurality of memory cells, determine a current set of intermediate data written in the plurality of memory cells, determine whether to invert the first set of intermediate data based on the current set of intermediate data, invert the first set of intermediate data, and write the inverted first set of intermediate data to the plurality of memory cells. The memory cells that are already at the correct state may be skipped over and not programmed, thereby improving programming speed and reducing the cumulative voltage stress applied to unselected memory cells.

Abstract: A data storage device includes a non-volatile memory. A method includes programming a first page at a word line of the non-volatile memory. While programming a second page at the word line, first storage elements of the word line are selectively programmed in response to a power drop at the data storage device to increase a state separation that separates data values of the first page.

Abstract: Post-write reading of data stored in a memory is performed only after a threshold amount of time has elapsed from the time the data was programmed. The threshold amount of time is at least the relaxation time of the memory cells, so that memory cells have reached stable states when post-write reading is performed.

Abstract: A method includes receiving an in-place refresh command to refresh data at a particular location in a non-volatile memory. The method also includes re-writing the data into the particular location of the non-volatile memory to refresh the data at the particular location in response to the in-place refresh command.

Abstract: A data storage device includes a memory and a controller. Mapping circuitry is configured to apply a mapping to received data to generate mapped data to be stored in storage elements. The mapping is configured to reduce average write time by mapping at least one incoming data value into a mapped value such that no transitions of storage elements from a second state to a first state are used for storing the mapped value into the storage elements. The mapping of the received data to the mapped data does not depend on the states of the storage elements prior to the writing of the mapped data.

Abstract: A data storage device includes a memory and a controller. Mapping circuitry is configured to apply a mapping to received data to generate mapped data to be stored in storage elements. The mapping is configured to reduce average write time by mapping at least one incoming data value into a mapped value such that no transitions of storage elements from a second state to a first state are used for storing the mapped value into the storage elements.

Abstract: Data that are stored in cells of a multi-bit-per cell memory, according to a systematic or non-systematic ECC, are read and corrected (systematic ECC) or recovered (non-systematic ECC) in accordance with estimated probabilities that one or more of the read bits are erroneous. In one method of the present invention, the estimates are a priori. In another method of the present invention, the estimates are based only on aspects of the read bits that include significances or bit pages of the read bits. In a third method of the present invention, the estimates are based only on values of the read bits. Not all the estimates are equal.

Abstract: Post-write reading of data stored in a memory is performed only after a threshold amount of time has elapsed from the time the data was programmed. The threshold amount of time is at least the relaxation time of the memory cells, so that memory cells have reached stable states when post-write reading is performed.

Abstract: A method includes adjusting a counter value to indicate an access operation to a first portion of a non-volatile memory. The access operation is an erase operation or a write operation. The adjusted counter value indicates that a number of access operations to the first portion have been performed since an access operation to a second portion of the non-volatile memory has been performed. The method also includes selectively initiating a remedial action to the second portion in response to a comparison of the number of access operations to a threshold.

Abstract: A data storage device includes a NAND flash memory, an executable interface and a controller for receiving, from a host, via the executable interface, an instruction to access the NAND flash memory at a virtual address and for translating the virtual address to a physical address of the volatile memory. Preferably, the controller also provides boot functionality to the host.

Abstract: A data storage device includes a memory device and a controller. Mapping circuitry is configured, in response to receiving data, to apply a one-to-many mapping to each group of multiple groups of bits in the received data to generate mapped data that includes multiple groups of mapped bits. Storage elements of the memory device are partitioned into multiple skip groups and the mapped bits of each group of mapped bits are interleaved across the skip groups such that different bits of a group of mapped bits are written into different skip groups.