Abstract: A ceramic substrate structure includes a ceramic board, a first conductive layer, a second conductive layer and a heat dissipation layer. The ceramic board has a first surface and a second surface opposite to each other. Each of the first surface and the second surface is a single surface extending continuously. The first conductive layer is mounted on the first surface of the ceramic board. The second conductive layer is mounted on the first surface of the ceramic board. The second conductive layer is adjacent to the first conductive layer and have different thicknesses. The heat dissipation layer is mounted on the second surface of the ceramic board. The heat dissipation layer includes a first heat dissipation portion corresponding to the first conductive layer and a second heat dissipation portion corresponding to the second conductive layer, and the second heat dissipation portion has a patterned region.

Abstract: A resin composition and the uses of it are provided. The resin composition comprises: (A) a polyfunctional vinyl aromatic copolymer; and (B) a diene compound, represented by the following formula (I) wherein, in formula (I), R10 and R11 are independently H, a C1-C6 linear or branched alkyl, with the proviso that R10 and R11 are not simultaneously H; and the polyfunctional vinyl aromatic copolymer (A) is prepared by copolymerizing one or more divinyl aromatic compounds with one or more monovinyl aromatic compounds.

Abstract: The present invention provides a control method of a receiver. The control method includes the steps of: when the receiver enters a sleep/standby mode, continually detecting an auxiliary signal from an auxiliary channel to generate a detection result; and if the detection result indicates that the auxiliary signal has a preamble or a specific pattern, generating a wake-up control signal to wake up the receiver before successfully receiving the auxiliary signal having a wake-up command.

Abstract: A method for fabricating a dual-damascene copper structure includes providing a semiconductor substrate having a dielectric layer thereon and a dual-damascene hole positioned in the dielectric layer, wherein a portion of the semiconductor substrate is exposed in the dual-damascene hole. A PVD process and an atomic CVD process are sequentially performed to form a substrate-protecting layer and a tantalum nitride layer in the dual-damascene hole. And then a copper layer is formed in the dual-damascene hole.

Abstract: A copper damascene process includes providing a substrate having a dielectric layer thereon, forming at least a copper damascene structure in the dielectric layer, performing a heat treatment on the substrate, and performing a reduction plasma treatment on a surface of the copper damascene structure. The impurities formed in the copper damascene process are removed by the heat treatment, therefore the copper damascene structure is completely reduced by the reduction plasma treatment and is improved.

Abstract: A method for fabricating a dual-damascene copper structure includes providing a semiconductor substrate having a dielectric layer thereon and a dual-damascene hole positioned in the dielectric layer, wherein a portion of the semiconductor substrate is exposed in the dual-damascene hole. A PVD process and an atomic CVD process are sequentially performed to form a substrate-protecting layer and a tantalum nitride layer in the dual-damascene hole. And then a copper layer is formed in the dual-damascene hole.