Abstract: A defog lens for vehicles includes a lens barrel, a lens, and a hydrophilic layer. The lens barrel has an opening toward an object side. The lens is disposed in the lens barrel and is located at the opening. The hydrophilic layer covers a surface of the lens and includes silicone compounds. Water droplets condensed on the lens could form a sheet film sticking to the surface of the lens and hard to form spherical water droplets, thereby improving the problem that the field of view of the conventional lens is blocked by spherical water droplets, effectively improving the clarity of the image captured by the defog lens, and therefore the defog lens could be applied to various environments.

Abstract: A device includes: a complementary transistor including: a first transistor having a first source/drain region and a second source/drain region; and a second transistor stacked on the first transistor, and having a third source/drain region and a fourth source/drain region, the third source/drain region overlapping the first source/drain region, the fourth source/drain region overlapping the second source/drain region. The device further includes: a first source/drain contact electrically coupled to the third source/drain region; a second source/drain contact electrically coupled to the second source/drain region; a gate isolation structure adjacent the first and second transistors; and an interconnect structure electrically coupled to the first source/drain contact and the second source/drain contact.

Abstract: A semiconductor device includes a plurality of semiconductor layers arranged one above another, and source/drain epitaxial regions on opposite sides of the plurality of semiconductor layers. The semiconductor device further includes a gate structure surrounding each of the plurality of semiconductor layers. The gate structure includes interfacial layers respectively over the plurality of semiconductor layers, a high-k dielectric layer over the interfacial layers, and a gate metal over the high-k dielectric layer. The gate structure further includes gate spacers spacing apart the gate structure from the source/drain epitaxial regions. A top position of the high-k dielectric layer is lower than top positions of the gate spacers.

Abstract: A defrosting lens includes a lens barrel having an opening toward an object side, a first lens disposed in the lens barrel and located at the opening, and a heating member. The heating member is for providing a heat source and is disposed between an inner wall of the lens barrel and the first lens. The heating member is arranged along a peripheral edge of the first lens. By raising a temperature of the first lens through the heat source supplied by the heating member, frost formed on the first lens could be removed, thereby a definition of an image captured by the defrosting lens could be effectively improved, and the defrosting lens could be applied in various environments without being limited by the change of climate temperature difference.

Abstract: A semiconductor device includes source and a drain above a substrate and spaced apart along a first direction, and a semiconductor channel extending between the source and the drain. The semiconductor device further includes gate spacers, an interfacial layer, and a metal gate structure. The gate spacers are disposed on the semiconductor channel and spaced apart by a spacer-to-spacer distance along the first direction. The interfacial layer is on the semiconductor channel. The interfacial layer extends a length along the first direction, and the length is less than a minimum of the spacer-to-spacer distance along the first direction. The metal gate structure is over the interfacial layer.

Abstract: A communication apparatus disposed outdoors, comprises the following elements. A first communication module performing a Low-Power Wide-Area-Network (LPWAN) communication with at least one end device in a first frequency band. A second communication module coupled to the first communication module, comprising a signal processor, a chime module; and a wireless communication circuit. The wireless communication circuit performs at least one wireless communication in a second frequency band.

Abstract: The disclosure provides an Internet of things device and a battery power supply circuit thereof. A voltage of a battery is compared with a predetermined over-discharge voltage to generate a comparison signal. A battery protection circuit serves as a power supply path from the battery to a load and determines whether to cut off the power supply path according to the comparison signal. The battery protection circuit cuts off the power supply path when the voltage of the battery decreases from a value greater than the predetermined over-discharge voltage to a value less than the predetermined over-discharge voltage, but does not turn on the power supply path when the voltage of the battery increases from a value less than the predetermined over-discharge voltage to a value greater than the predetermined over-discharge voltage.

Abstract: A green bridge circuit for adjusting a DC power source and an AC power source is provided. The green bridge circuit includes a bridge circuit and a bias adjustment circuit. The bridge circuit includes four transistors connected to a first power terminal, a system load, and a second power terminal. The bias adjustment circuit has an input terminal coupled to an output terminal of the bridge circuit and an output terminal coupled to control terminals of the transistors. The bias adjustment circuit changes bias voltages of the control terminals of the transistors according to a rectified voltage outputted by the bridge circuit. In this way, loss is reduced, heat generation is prevented, and transmission loss is addressed.

Abstract: A semiconductor device includes source and a drain above a substrate and spaced apart along a first direction, and a semiconductor channel extending between the source and the drain. The semiconductor device further includes gate spacers, an interfacial layer, and a metal gate structure. The gate spacers are disposed on the semiconductor channel and spaced apart by a spacer-to-spacer distance along the first direction. The interfacial layer is on the semiconductor channel. The interfacial layer extends a length along the first direction, and the length is less than a minimum of the spacer-to-spacer distance along the first direction. The metal gate structure is over the interfacial layer.

Abstract: A method of manufacturing a semiconductor device includes forming a fin structure comprising alternately stacked first semiconductor layers and second semiconductor layers over a substrate. A sacrificial gate structure is formed over the fin structure. Spacers are formed on either side of the sacrificial gate structure. The sacrificial gate structure is removed to form a trench between the spacers. The first semiconductor layers are removed from the trench, while leaving the second semiconductor layers suspended in the trench. A self-assembling monolayer is formed on sidewalls of the spacers in the trench. Interfacial layers are formed encircling the suspended second semiconductor layers, respectively. A high-k dielectric layer is deposited at a faster deposition rate on the interfacial layers than on the self-assembling monolayer. A metal gate structure is formed over the high-k dielectric layer.

Abstract: A method of manufacturing a semiconductor device includes forming a fin structure comprising alternately stacked first semiconductor layers and second semiconductor layers over a substrate. A sacrificial gate structure is formed over the fin structure. Spacers are formed on either side of the sacrificial gate structure. The sacrificial gate structure is removed to form a trench between the spacers. The first semiconductor layers are removed from the trench, while leaving the second semiconductor layers suspended in the trench. A self-assembling monolayer is formed on sidewalls of the spacers in the trench. Interfacial layers are formed encircling the suspended second semiconductor layers, respectively. A high-k dielectric layer is deposited at a faster deposition rate on the interfacial layers than on the self-assembling monolayer. A metal gate structure is formed over the high-k dielectric layer.

Abstract: A green bridge circuit for adjusting a DC power source and an AC power source is provided. The green bridge circuit includes a bridge circuit and a bias adjustment circuit. The bridge circuit includes four transistors connected to a first power terminal, a system load, and a second power terminal. The bias adjustment circuit has an input terminal coupled to an output terminal of the bridge circuit and an output terminal coupled to control terminals of the transistors. The bias adjustment circuit changes bias voltages of the control terminals of the transistors according to a rectified voltage outputted by the bridge circuit. In this way, loss is reduced, heat generation is prevented, and transmission loss is addressed.

Abstract: A smoke detector comprising: a first light source, configured to generate first light beam; a second light source, configured to generate second light beam; a light receiver, configured to respectively generate a first and a second original light detecting signal in response to the first light beam and the second light beam, wherein an energy conversion efficiency of the light receiver at the first wavelength is different from an energy conversion efficiency of the light receiver at the second wavelength; a signal adjusting circuit, configured to amplify the second original light detecting signal to generate a second light detecting signal; and a driving and determining circuit, configured to determine signal intensities of the first original light detecting signal and the second light detecting signal.

Abstract: A smoke detector comprising: a first light source, configured to generate first light beam; a second light source, configured to generate second light beam; a light receiver, configured to respectively generate a first and a second original light detecting signal in response to the first light beam and the second light beam, wherein an energy conversion efficiency of the light receiver at the first wavelength is different from an energy conversion efficiency of the light receiver at the second wavelength; a signal adjusting circuit, configured to amplify the second original light detecting signal to generate a second light detecting signal; and a driving and determining circuit, configured to determine signal intensities of the first original light detecting signal and the second light detecting signal.

Abstract: An electronic device that can detect and report tampering, comprising: a case, comprising an installation surface, wherein the electronic device is for being installed to an installation position via the installation surface; a battery, located inside the case, configured to provide battery power; a temporary power storage circuit, located in the case; a power off switch, located on the case and coupled between the battery and the temporary power storage circuit, configured to operate in a conductive state while the electronic device is installed at the installation position, and configured to automatically operate in a power off state after the electronic device being removed from the installation position; and a wireless communication circuit, located in the case and coupled to the power off switch and the temporary power storage circuit.

Abstract: An electronic device that can detect and report tampering, comprising: a case, comprising an installation surface, wherein the electronic device is for being installed to an installation position via the installation surface; a battery, located inside the case, configured to provide battery power; a temporary power storage circuit, located in the case; a power off switch, located on the case and coupled between the battery and the temporary power storage circuit, configured to operate in a conductive state while the electronic device is installed at the installation position, and configured to automatically operate in a power off state after the electronic device being removed from the installation position; and a wireless communication circuit, located in the case and coupled to the power off switch and the temporary power storage circuit.

Abstract: A detection and updating method of touch system includes: proceeding an ideal base signal measurement to obtain a plurality of ideal base signals under an ideal state; proceeding a raw base signal measurement to obtain a plurality of raw base signals under a raw state; forming a linear relationship related by the ideal base signals and the raw base signals to obtain two coefficients; calculating a plurality of new base signals according to the two coefficients and the ideal base signals; and, proceeding a base signal updating method by the new base signals.

Abstract: A detection method for an irregular conductive matter in a touch event includes scanning a plurality of detection points to obtain a plurality of sensing signals of the detection points; computing a first signal summation of all positive signals among the sensing signals; obtaining a first change between the first signal summation and a previous first signal summation; computing a second signal summation of all negative signals among the sensing signals; obtaining a second change between the second signal summation and a previous second signal summation; setting a flag according to the first change and the second change when the first change and the second change are positive; clearing the flag according to the first change and the second change when the first change and the second change are negative; and disabling a reporting of at least one touch point when the flag exists.

Abstract: A doorbell device has a first power input terminal and a second power input terminal. The doorbell device is coupled to a chime device. The doorbell device includes a current sensing circuit, a switch circuit, and a processing circuit. The current sensing circuit is coupled to the first power input terminal, and generates a sensing voltage according to a current flowing through the current sensing circuit. The switch circuit is coupled between the current sensing circuit and the second power input terminal. The switch circuit changes the conducting state in response to a control signal. The processing circuit is configured to provide the control signal and determine the type of the chime device according to the sensing voltage.

Abstract: A pad wetness detection method and a pad wetness detection device are provided. The pad wetness detection method includes the following steps. A plurality of initial electrical records of a medical pad are obtained via two detecting areas after a pad wetness detection device is coupled to the two detecting areas of the medical pad. A threshold value is obtained via a learning algorithm according to the initial electrical records. At least one measured electrical record of the medical pad is obtained via the two detecting areas. Whether the at least one measured electrical record reaches the threshold value is determined and a warning signal is outputted accordingly.