Abstract: A thin film processing apparatus assembles a substrate and an auxiliary plate tightly and the substrate is coated with a thin film whereon the auxiliary plate is situated. Since the substrate or the auxiliary plate is transparent for thermal radiation, the thin film heated by thermal radiation symmetrically in thickness direction will be available. Consequentially debonding, warping and cracking of thin film are thus prevented and outgassing from thin film is eliminated as well.

Abstract: The invention discloses a control method of optical cutting. A laser processing module is used to generate a cutting heat source and an auxiliary heat source. The control method of optical cutting includes the steps of determining a cutting path on the work piece first; then calculating a thermal stress distribution along the cutting path according to a heating condition; next determining an irradiation condition for the auxiliary cutting heat source according to the thermal stress distribution induced by the cutting heat source; and irradiating the work piece along the cutting path with the cutting heat source and simultaneously irradiating the work piece with the auxiliary cutting heat source. The cutting of the work piece is therefore finished.

Abstract: An apparatus of thermal processing is provided. A heating lamp and a reflector are disposed over a wafer and the heat flux distribution on the wafer generated by the individual heating lamp is measured and adjusted. A set of heating lamps formed by heating lamps is disposed over the wafer. The heating lamps are in concentric rings and arranged as an axi-symmetric array. The relative position between the set of heating lamps and the wafer is adjusted so that the wafer center is at the position with local mean heat flux from lamps between the most inner lamp subset and its adjacent lamp subset. Followed by adjusting the heating powers, either or both of the wafer and the set of heating lamps are rotated respect to the center of the wafer, so as to improve uniformity of the heat flux distribution on the heated object.

Abstract: The invention discloses a control method of optical cutting. A laser processing module is used to generate a cutting heat source and an auxiliary heat source. The control method of optical cutting includes the steps of determining a cutting path on the work piece first; then calculating a thermal stress distribution along the cutting path according to a heating condition; next determining an irradiation condition for the auxiliary cutting heat source according to the thermal stress distribution induced by the cutting heat source; and irradiating the work piece along the cutting path with the cutting heat source and simultaneously irradiating the work piece with the auxiliary cutting heat source. The cutting of the work piece is therefore finished.

Abstract: An adjusting technology of thermal processing is provided. A heating lamp and a reflector are disposed over a wafer and the heat flux distribution on the wafer generated by the individual heating lamp is measured and adjusted. A set of heating lamps formed by heating lamps is disposed over the wafer. The heating lamps are in concentric rings and arranged as an axi-symmetric array. The relative position between the set of heating lamps and the wafer is adjusted so that the wafer center is at the position with local mean heat flux from lamps between the most inner lamp subset and its adjacent lamp subset. Followed by adjusting the heating powers, either or both of the wafer and the set of heating lamps are rotated respect to the center of the wafer, so as to improve uniformity of the heat flux distribution on the heated object.

Abstract: An adjusting technology of thermal processing is provided. A heating lamp and a reflector are disposed over a wafer and the heat flux distribution on the wafer generated by the individual heating lamp is measured and adjusted. A set of heating lamps formed by heating lamps is disposed over the wafer. The heating lamps are in concentric rings and arranged as an axi-symmetric array. The relative position between the set of heating lamps and the wafer is adjusted so that the wafer center is at the position with local mean heat flux from lamps between the most inner lamp subset and its adjacent lamp subset. Followed by adjusting the heating powers, either or both of the wafer and the set of heating lamps are rotated respect to the center of the wafer, so as to improve uniformity of the heat flux distribution on the heated object.