Abstract: A package structure includes a mounting pad having a mounting surface; a semiconductor chip having a magnetic device, a first magnetic field shielding, and a molding. The semiconductor chip comprises a first surface perpendicular to a thickness direction of the semiconductor chip, a second surface opposite to the first surface, wherein the second surface is attached to the mounting surface of the mounting pad, and a third surface connecting the first surface and the second surface. The first magnetic field shielding including a plurality of segments laterally at least partially surrounding the semiconductor chip, wherein a bottom surface of the first magnetic field shielding is attached to the mounting surface of the mounting pad, wherein the mounting surface comprises first portion free from overlapping with the first magnetic field shielding from a top view perspective. The molding surrounding the mounting pad and in direct contact with the mounting surface.

Abstract: The present disclosure describes a magnetic memory device. The magnetic memory device includes a magnetic sensing array configured to sense an external magnetic field strength. The magnetic memory device further includes a voltage modulator configured to, in response to the external magnetic field strength being greater than a threshold magnetic field strength, provide a test voltage different from a current write voltage of the magnetic memory device. The magnetic memory device further includes an error check array configured to use the test voltage as a write voltage of the error check array and provide a bit error rate corresponding to the test voltage. The magnetic memory device further includes a control unit configured to adjust, based on the bit error rate being equal to or less than a threshold bit error rate, a write voltage of the magnetic memory device from the current write voltage to the test voltage.

Abstract: The present disclosure describes a magnetic memory device. The magnetic memory device includes a magnetic sensing array configured to sense an external magnetic field strength. The magnetic memory device further includes a voltage modulator configured to, in response to the external magnetic field strength being greater than a threshold magnetic field strength, provide a test voltage different from a current write voltage of the magnetic memory device. The magnetic memory device further includes an error check array configured to use the test voltage as a write voltage of the error check array and provide a bit error rate corresponding to the test voltage. The magnetic memory device further includes a control unit configured to adjust, based on the bit error rate being equal to or less than a threshold bit error rate, a write voltage of the magnetic memory device from the current write voltage to the test voltage.

Abstract: The present disclosure describes a magnetic memory device. The magnetic memory device includes a magnetic sensing array configured to sense an external magnetic field strength. The magnetic memory device further includes a voltage modulator configured to, in response to the external magnetic field strength being greater than a threshold magnetic field strength, provide a test voltage different from a current write voltage of the magnetic memory device. The magnetic memory device further includes an error check array configured to use the test voltage as a write voltage of the error check array and provide a bit error rate corresponding to the test voltage. The magnetic memory device further includes a control unit configured to adjust, based on the bit error rate being equal to or less than a threshold bit error rate, a write voltage of the magnetic memory device from the current write voltage to the test voltage.

Abstract: The present disclosure describes a magnetic memory device. The magnetic memory device includes a magnetic sensing array configured to sense an external magnetic field strength. The magnetic memory device further includes a voltage modulator configured to, in response to the external magnetic field strength being greater than a threshold magnetic field strength, provide a test voltage different from a current write voltage of the magnetic memory device. The magnetic memory device further includes an error check array configured to use the test voltage as a write voltage of the error check array and provide a bit error rate corresponding to the test voltage. The magnetic memory device further includes a control unit configured to adjust, based on the bit error rate being equal to or less than a threshold bit error rate, a write voltage of the magnetic memory device from the current write voltage to the test voltage.

Abstract: The present disclosure describes a magnetic memory device. The magnetic memory device includes a magnetic sensing array configured to sense an external magnetic field strength. The magnetic memory device further includes a voltage modulator configured to, in response to the external magnetic field strength being greater than a threshold magnetic field strength, provide a test voltage different from a current write voltage of the magnetic memory device. The magnetic memory device further includes an error check array configured to use the test voltage as a write voltage of the error check array and provide a bit error rate corresponding to the test voltage. The magnetic memory device further includes a control unit configured to adjust, based on the bit error rate being equal to or less than a threshold bit error rate, a write voltage of the magnetic memory device from the current write voltage to the test voltage.

Abstract: A package structure includes a mounting pad having a mounting surface; a semiconductor chip having a magnetic device, a first magnetic field shielding, and a molding. The semiconductor chip comprises a first surface perpendicular to a thickness direction of the semiconductor chip, a second surface opposite to the first surface, wherein the second surface is attached to the mounting surface of the mounting pad, and a third surface connecting the first surface and the second surface. The first magnetic field shielding including a plurality of segments laterally at least partially surrounding the semiconductor chip, wherein a bottom surface of the first magnetic field shielding is attached to the mounting surface of the mounting pad, wherein the mounting surface comprises first portion free from overlapping with the first magnetic field shielding from a top view perspective. The molding surrounding the mounting pad and in direct contact with the mounting surface.

Abstract: In some embodiments, a semiconductor wafer testing system is provided. The semiconductor wafer testing system includes a semiconductor wafer prober having one or more conductive probes, where the semiconductor wafer prober is configured to position the one or more conductive probes on an integrated chip (IC) that is disposed on a semiconductor wafer. The semiconductor wafer testing system also includes a ferromagnetic wafer chuck, where the ferromagnetic wafer chuck is configured to hold the semiconductor wafer while the wafer prober positions the one or more conductive probes on the IC. An upper magnet is disposed over the ferromagnetic wafer chuck, where the upper magnet is configured to generate an external magnetic field between the upper magnet and the ferromagnetic wafer chuck, and where the ferromagnetic wafer chuck amplifies the external magnetic field such that the external magnetic field passes through the IC with an amplified magnetic field strength.

Abstract: Systems and methods for correcting data errors in memory caused by high-temperature processing of the memory are provided. An integrated circuit (IC) die including a memory is formed. Addresses of memory locations that are susceptible to data loss when subjected to elevated temperatures are determined. Bits of data are written to the memory, where the bits of data include a set of bits written to the memory locations. The set of bits are written to a storage device of the IC die that is not susceptible to data loss when subjected to the elevated temperatures, the subset of bits comprise compressed code. At least one of the bits stored at the addresses is overwritten after subjecting the IC die to an elevated temperature. The at least one of the bits is overwritten based on the set of bits written to the storage device.

Abstract: The present disclosure provides a package structure, including a mounting pad having a mounting surface, a semiconductor chip disposed on the mounting surface of the mounting pad, wherein the semiconductor chip includes a first surface, a second surface opposite to the first surface and facing the mounting surface, and a third surface connecting the first surface and the second surface, a first magnetic field shielding, including a first portion proximal to the third surface of the semiconductor chip, wherein the first portion has a first height calculated from the mounting surface to a top surface, and a second portion distal to the semiconductor chip, has a second height calculated from the mounting surface to a position at a surface facing away from the mounting surface, wherein the second height is less than the first height, wherein the second portion has an inclined sidewall.

Abstract: In a method of testing a multilayer structure containing a magnetic layer, one or more network parameters are measured of a waveguide that is electromagnetically coupled with the multilayer structure as a function of frequency and as a function of a magnetic field applied to the multilayer structure during the measuring of the network parameters. Based on the measured one or more network parameters, at least one magnetic property of the magnetic layer of the multilayer structure is determined. The network parameters in some embodiments are S-parameters. The at least one magnetic property may include an effective anisotropy field of the magnetic layer and/or a damping constant of the magnetic layer.

Abstract: In some embodiments, a method for generating a random bit is provided. The method includes generating a first random bit by providing a random number generator (RNG) signal to a magnetoresistive random-access memory (MRAM) cell. The RNG signal has a probability of about 0.5 to switch the resistive state of the MRAM cell from a first resistive state corresponding to a first data state to a second resistive state corresponding to a second data sate. The first random bit is then read from the MRAM cell.

Abstract: In some embodiments, a semiconductor wafer testing system is provided. The semiconductor wafer testing system includes a semiconductor wafer prober having one or more conductive probes, where the semiconductor wafer prober is configured to position the one or more conductive probes on an integrated chip (IC) that is disposed on a semiconductor wafer. The semiconductor wafer testing system also includes a ferromagnetic wafer chuck, where the ferromagnetic wafer chuck is configured to hold the semiconductor wafer while the wafer prober positions the one or more conductive probes on the IC. An upper magnet is disposed over the ferromagnetic wafer chuck, where the upper magnet is configured to generate an external magnetic field between the upper magnet and the ferromagnetic wafer chuck, and where the ferromagnetic wafer chuck amplifies the external magnetic field such that the external magnetic field passes through the IC with an amplified magnetic field strength.

Abstract: In some embodiments, a method for generating a random bit is provided. The method includes generating a first random bit by providing a random number generator (RNG) signal to a magnetoresistive random-access memory (MRAM) cell. The RNG signal has a probability of about 0.5 to switch the resistive state of the MRAM cell from a first resistive state corresponding to a first data state to a second resistive state corresponding to a second data sate. The first random bit is then read from the MRAM cell.

Abstract: In some embodiments, a method for generating a random bit is provided. The method includes generating a first random bit by providing a random number generator (RNG) signal to a magnetoresistive random-access memory (MRAM) cell. The RNG signal has a probability of about 0.5 to switch the resistive state of the MRAM cell from a first resistive state corresponding to a first data state to a second resistive state corresponding to a second data state. The first random bit is then read from the MRAM cell.

Abstract: In some embodiments, a semiconductor wafer testing system is provided. The semiconductor wafer testing system includes a semiconductor wafer prober having one or more conductive probes, where the semiconductor wafer prober is configured to position the one or more conductive probes on an integrated chip (IC) that is disposed on a semiconductor wafer. The semiconductor wafer testing system also includes a ferromagnetic wafer chuck, where the ferromagnetic wafer chuck is configured to hold the semiconductor wafer while the wafer prober positions the one or more conductive probes on the IC. An upper magnet is disposed over the ferromagnetic wafer chuck, where the upper magnet is configured to generate an external magnetic field between the upper magnet and the ferromagnetic wafer chuck, and where the ferromagnetic wafer chuck amplifies the external magnetic field such that the external magnetic field passes through the IC with an amplified magnetic field strength.

Abstract: In some embodiments, a semiconductor wafer testing system is provided. The semiconductor wafer testing system includes a semiconductor wafer prober having one or more conductive probes, where the semiconductor wafer prober is configured to position the one or more conductive probes on an integrated chip (IC) that is disposed on a semiconductor wafer. The semiconductor wafer testing system also includes a ferromagnetic wafer chuck, where the ferromagnetic wafer chuck is configured to hold the semiconductor wafer while the wafer prober positions the one or more conductive probes on the IC. An upper magnet is disposed over the ferromagnetic wafer chuck, where the upper magnet is configured to generate an external magnetic field between the upper magnet and the ferromagnetic wafer chuck, and where the ferromagnetic wafer chuck amplifies the external magnetic field such that the external magnetic field passes through the IC with an amplified magnetic field strength.

Abstract: Systems and methods for correcting data errors in memory caused by high-temperature processing of the memory are provided. An integrated circuit (IC) die including a memory is formed. Addresses of memory locations that are susceptible to data loss when subjected to elevated temperatures are determined. Bits of data are written to the memory, where the bits of data include a set of bits written to the memory locations. The set of bits are written to a storage device of the IC die that is not susceptible to data loss when subjected to the elevated temperatures, the subset of bits comprise compressed code. At least one of the bits stored at the addresses is overwritten after subjecting the IC die to an elevated temperature. The at least one of the bits is overwritten based on the set of bits written to the storage device.

Abstract: The present disclosure provides a package structure, including a mounting pad having a mounting surface, a semiconductor chip disposed on the mounting surface of the mounting pad, wherein the semiconductor chip includes a first surface, a second surface opposite to the first surface and facing the mounting surface, and a third surface connecting the first surface and the second surface, a first magnetic field shielding, including a first portion proximal to the third surface of the semiconductor chip, wherein the first portion has a first height calculated from the mounting surface to a top surface, and a second portion distal to the semiconductor chip, has a second height calculated from the mounting surface to a position at a surface facing away from the mounting surface, wherein the second height is less than the first height, wherein the second portion has an inclined sidewall.

Abstract: In a method of testing a multilayer structure containing a magnetic layer, one or more network parameters are measured of a waveguide that is electromagnetically coupled with the multilayer structure as a function of frequency and as a function of a magnetic field applied to the multilayer structure during the measuring of the network parameters. Based on the measured one or more network parameters, at least one magnetic property of the magnetic layer of the multilayer structure is determined. The network parameters in some embodiments are S-parameters. The at least one magnetic property may include an effective anisotropy field of the magnetic layer and/or a damping constant of the magnetic layer.