Abstract: A multi-phase combination reaction system has at least one fixed bed hydrogenation reactor. The fixed bed hydrogenation reactor has, arranged from top to bottom, a first hydrogenation reaction area, a gas-liquid separation area, a second hydrogenation reaction area and a third hydrogenation reaction area. The gas-liquid separation area is provided with a raw oil inlet. A hydrogen inlet is provided between the second hydrogenation reaction area and the third hydrogenation reaction area. The system is capable of simultaneously obtaining two fractions in one hydrogenation reactor.

Abstract: A method of automatically initializing an analyte sensor for a user is disclosed here. A first analyte sensor is operated in a first measurement mode to generate first sensor signals indicative of an analyte level of the user. A second analyte sensor is deployed to measure the analyte level of the user, and is operated in an initialization mode, concurrently with operation of the first analyte sensor in the first measurement mode, to receive sensor configuration data generated by the first analyte sensor. During operation of the second analyte sensor in the initialization mode, the second analyte sensor is calibrated with at least some of the received sensor configuration data. After the calibrating, operation of the second analyte sensor is transitioned from the initialization mode to a second measurement mode during which the second analyte sensor generates second sensor signals indicative of the analyte level of the user.

Abstract: A light detection and ranging (LiDAR) method includes transmitting, by a first transmitter, a first optical signal. The method includes receiving first return signals corresponding to the first optical signal during a first long-range listening period and/or a first short-range listening period. The method includes transmitting, by the first transmitter, a second optical signal. The method includes transmitting, by a second transmitter, a third optical signal. The method includes detecting a set of return signals during a second short-range listening period, the set comprising second return signals corresponding to the second optical signal and/or third return signals corresponding to the third optical signal. The method includes sampling the set of return signals. The method includes filtering the sampled set of return signals detected during the second short-range listening period based on the first return signals received during the first-short range listening period.

Abstract: Systems and methods for detecting blockages for light detection and ranging (“LiDAR”) devices are disclosed. According to one embodiment, a light detection and ranging (LiDAR) blockage detection method includes emitting, by an active channel of a plurality of channels of a LiDAR device, an optical signal toward a configured position on a housing of the LiDAR device. A passive listening channel of the plurality of channels receives a return signal originating from the optical signal. Based on a comparison of data derived from the return signal and data derive from a reference signal, a determination is made as to whether a blockage is present at the configured position on the housing.

Abstract: A formulation of conjugates of tubulysin analogs with a cell-binding molecule having a structure represented by Formula (I), wherein T, L, m, n, ----, R1, R2, R3, R4, R1, R6, R7, R1, R9, R10, R11, R12, and R13 are as defined herein, can be used for targeted treatment of cancer, autoimmune disease, and infectious disease.

Abstract: A method of automatically initializing an analyte sensor for a user is disclosed here. A first analyte sensor is operated in a first measurement mode to generate first sensor signals indicative of an analyte level of the user. A second analyte sensor is deployed to measure the analyte level of the user, and is operated in an initialization mode, concurrently with operation of the first analyte sensor in the first measurement mode, to receive sensor configuration data generated by the first analyte sensor. During operation of the second analyte sensor in the initialization mode, the second analyte sensor is calibrated with at least some of the received sensor configuration data. After the calibrating, operation of the second analyte sensor is transitioned from the initialization mode to a second measurement mode during which the second analyte sensor generates second sensor signals indicative of the analyte level of the user.

Abstract: A random number generator uses a looped circuit that produces pulses dependent on manufacturing variations and noise, and fed into a counting circuit. In certain embodiments, the technology can be merged with a Physical Unclonable Function (PUF) such that a single circuit provides both 1) bits that are unique to each chip that remain fairly similar each time they are queried on the same chip; as well as 2) bits that are random, i.e., different each time the randomness is queried, even on the same device.

Abstract: An electrostatic discharge protection structure includes: substrate of a first type of conductivity, well region of a second type of conductivity, substrate contact region in the substrate and of the first type of conductivity, well contact region in the well region and of the second type of conductivity, substrate counter-doped region between the substrate contact region and the well contact region and of the second type of conductivity, well counter-doped region between the substrate contact region and the well contact region and of the first type of conductivity, communication region at a lateral junction between the substrate and the well region, first isolation region between the substrate counter-doped region and the communication region, second isolation region between the well counter-doped region and the communication region, oxide layer having one end on the first isolation region and another end on the substrate, and field plate structure on the oxide layer.

Abstract: A scanning system for fluorescent imaging includes a sample holder configured to hold a sample therein, the sample holder defining a sample holding region. A scanner head spans the sample holding region and is movable relative to the sample holder. An array of light sources is disposed on an opposing side of the sample holder and is angled relative thereto. Respective controller are operably coupled to the scanner head and the array of light sources, wherein one controller selectively actuates a one or more rows of the array of light sources and another controller controls movement of the scanner head to capture fluorescent light emitted from within the sample holder in response to illumination from the actuated light sources. A filter designed to filter out scattered light from the sample may be interposed between the sample holder and the scanner head.

Abstract: Various embodiments provide SCR ESD protection devices and methods for forming the same. An exemplary device includes a semiconductor substrate having a P-type well region, an N-type well region adjacent to the P-type well region, a first P-type doped region and a first N-type doped region in the P-type well region, and a second N-type doped region and a second P-type doped region in the N-type well region. A first center-doped region and a second center-doped region doped with impurity ions of a same type are located between the first N-type doped region and the second P-type doped region and extend across the P-type well region and the N-type well region. The first center-doped region is located within the second center-doped region, has a doping concentration higher than a doping concentration in the second center-doped region, and has a depth smaller than a depth of the second center-doped region.

Abstract: An electrostatic discharge protection structure includes: substrate of a first type of conductivity, well region of a second type of conductivity, substrate contact region in the substrate and of the first type of conductivity, well contact region in the well region and of the second type of conductivity, substrate counter-doped region between the substrate contact region and the well contact region and of the second type of conductivity, well counter-doped region between the substrate contact region and the well contact region and of the first type of conductivity, communication region at a lateral junction between the substrate and the well region, first isolation region between the substrate counter-doped region and the communication region, second isolation region between the well counter-doped region and the communication region, oxide layer having one end on the first isolation region and another end on the substrate, and field plate structure on the oxide layer.

Abstract: A scanning system for fluorescent imaging includes a sample holder configured to hold a sample therein, the sample holder defining a sample holding region. A scanner head spans the sample holding region and is movable relative to the sample holder. An array of light sources is disposed on an opposing side of the sample holder and is angled relative thereto. Respective controller are operably coupled to the scanner head and the array of light sources, wherein one controller selectively actuates a one or more rows of the array of light sources and another controller controls movement of the scanner head to capture fluorescent light emitted from within the sample holder in response to illumination from the actuated light sources. A filter designed to filter out scattered light from the sample may be interposed between the sample holder and the scanner head.

Abstract: An electrostatic discharge protection structure includes: substrate of a first type of conductivity, well region of a second type of conductivity, substrate contact region in the substrate and of the first type of conductivity, well contact region in the well region and of the second type of conductivity, substrate counter-doped region between the substrate contact region and the well contact region and of the second type of conductivity, well counter-doped region between the substrate contact region and the well contact region and of the first type of conductivity, communication region at a lateral junction between the substrate and the well region, first isolation region between the substrate counter-doped region and the communication region, second isolation region between the well counter-doped region and the communication region, oxide layer having one end on the first isolation region and another end on the substrate, and field plate structure on the oxide layer.

Abstract: A semiconductor device for electrostatic discharge protection includes a substrate, a first well and a second well formed in the substrate. The first and second wells are formed side by side, meeting at an interface, and have a first conductivity type and a second conductivity type, respectively. A first heavily doped region and a second heavily-doped region are formed in the first well. A third heavily doped region and a fourth heavily-doped region are formed in the second well. The first, second, third, and fourth heavily-doped regions have the first, second, second, and first conductivity types, respectively. Positions of the first and second heavily-doped regions are staggered along a direction parallel to the interface.

Abstract: An electrostatic discharge (ESD) protection device is provided. A proper trigger voltage is determined by providing an ESD doped injection layer into a PNPN structure and adjusting the injection energy and dosage of the ESD doped injection layer; a proper holding voltage is obtained by adjusting the size of the ESD doped injection layer, thus preventing the latch-up. The self-isolation effect of the electrostatic discharge protection device is formed on the basis of an epitaxial wafer high voltage process or a silicon-on-insulator (SOI) wafer high voltage process, the ESD protective device of the present invention can prevent the device from being falsely triggered due to noise interference. Compared with other known ESD protection devices, the device has the same electrostatic protection ability, much smaller area, and much lower cost.

Abstract: Various embodiments provide SCR ESD protection devices and methods for forming the same. An exemplary device includes a semiconductor substrate having a P-type well region, an N-type well region adjacent to the P-type well region, a first P-type doped region and a first N-type doped region in the P-type well region, and a second N-type doped region and a second P-type doped region in the N-type well region. A first center-doped region and a second center-doped region doped with impurity ions of a same type are located between the first N-type doped region and the second P-type doped region and extend across the P-type well region and the N-type well region. The first center-doped region is located within the second center-doped region, has a doping concentration higher than a doping concentration in the second center-doped region, and has a depth smaller than a depth of the second center-doped region.

Abstract: A semiconductor device for electrostatic discharge protection includes a substrate, a first well and a second well formed in the substrate. The first and second wells are formed side by side, meeting at an interface, and have a first conductivity type and a second conductivity type, respectively. A first heavily doped region and a second heavily-doped region are formed in the first well. A third heavily doped region and a fourth heavily-doped region are formed in the second well. The first, second, third, and fourth heavily-doped regions have the first, second, second, and first conductivity types, respectively. Positions of the first and second heavily-doped regions are staggered along a direction parallel to the interface.

Abstract: A random number generator uses a looped circuit that produces pulses dependent on manufacturing variations and noise, and fed into a counting circuit. In certain embodiments, the technology can be merged with a Physical Unclonable Function (PUF) such that a single circuit provides both 1) bits that are unique to each chip that remain fairly similar each time they are queried on the same chip; as well as 2) bits that are random, i.e., different each time the randomness is queried, even on the same device.

Abstract: A method and system are provided for a symbol-oriented approach that addresses information recovery from manufacturing variations (MVs) readings in a high noise environment. The multi-bits-per-symbol approach, which is in accordance with the various aspects of the present invention, is in contrast with how manufacturing-variation-derived bits are normally treated in the context of PUF Key Generation's error correction process. The multi-bit-per-symbol approach also offers a natural distance metric (distance to the most-likely symbol, distance to the next-most-likely symbol, etc.) which can aid soft-decision decoding or list-decoding, and can be used to improve the provisioning of a more reliably encoded secret and its associated helper data value.

Abstract: An SCR apparatus includes an SCR structure and a first N injection region. The SCR structure includes a P+ injection region, a P well, an N well and a first N+ injection region, the first N injection region is located under an anode terminal of the P+ injection region of the SCR structure. A method for adjusting a sustaining voltage therefor is provided as well.