Abstract: The present invention discloses a charge pump system for low-supply voltage including: a clock generator to generate a plurality of clock signals; a clock pump circuit coupled to said clock generator to generate high voltage; a level shifter coupled to said clock generator and said clock pump circuit to generate a plurality of HV (high voltage)-clock signals; a main pump circuit coupled to said clock generator and said level shifter to generate output voltage.

Abstract: The present invention discloses an offset cancellation current mirror and method thereof. The offset cancellation current minor comprises a first current mirror, a second current minor, switches and resistors. The first current minor comprises two transistors and a capacitance, the capacitance is used to store an electrical potential difference when the switches are turned on in ways of connecting the first current mirror with the resistor. When the switches is turned off in ways of disconnecting the first current mirror with the resistor and connecting the first current mirror with the second current minor, the electrical potential difference stored in the capacitance is used to correct the difference of the two transistors due to manufacture process.

Abstract: A 3D-IC detector for each layer of a stacked device with N layer, includes a dividing-two circuit coupled to a (N?1) signal; a first comparator is coupled to the dividing-two circuit, wherein an input A is coupled to an initial layer number signal, an input B of the first comparator is coupled to an output of the dividing-two circuit; a second comparator is coupled to the initial layer number by an input A of the second comparator, and a num is coupled to an input B of the second comparator; a first Add/sub circuit is coupled to the num via an input A of the first Add/sub circuit, and coupled to the first comparator via an input B of the first Add/sub circuit, to the second comparator via an input +/?signal of the first Add/sub circuit; and a second Add/sub circuit coupled to the first comparator via an input A of the second Add/sub circuit, to the num via an input B of the second Add/sub circuit.

Abstract: A 3D-IC detector for each layer of a stacked device comprises a pulse generator to receive an initial signal and generate a pulse-in signal to a next stage detector. A latch is coupled to the pulse generator to receive an output signal from the pulse generator and generate a layer identifying signal. A counter is coupled to previous stage detector and the initial signal to perform a counting operation; and an adder coupled to the counter to add a number to a counting output from the counter and input added signal to the pulse generator.

Abstract: The present invention relates to a current sensing amplifier and a method thereof. The current sensing amplifier comprises a first current path, a second current path, a first capacitor, a second capacitor and a latch circuit. When a first current and a second current flow in the first current path and the second current path respectively, the first and second capacitor may be charged by the first current and the second current. The first capacitor and the second capacitor may couple the charged voltage to the transistors in the first current path and the second current path when the first and second current path are cut off so as to cancel the effect of offset voltage of the transistors generated during the manufacturing process.

Abstract: A non-volatile static random access memory (NV-SRAM) including a latch unit, a first switch, a second switch, a first non-volatile memory (NVM), and a second NVM and an operation method thereof are provided. First terminals of the first and the second switch are respectively connected to a first and a second terminal of the latch unit. Second terminals of the first and the second switch are respectively connected to a first and a second bit line. Control terminals of the first and the second switch are connected to a word line. First terminals of the first and the second NVM are respectively connected to the first and the second terminal of the latch unit. Second terminals of the first and the second NVM are respectively connected to the first and the second bit line. Enable terminals of the first and the second NVM are connected to an enable line.

Abstract: A process variation detection apparatus and a process variation detection method are provided. The process variation detection apparatus includes a process variation detector and a compensation signal generator. The process variation detector includes a first process variation detection component, a second process variation detection component and a current comparator. The channel of the first process variation detection component is a first conductive type, and the channel of the second process variation detection component is a second conductive type, wherein the above-mentioned first conductive type is different from the second conductive type. The current comparator is connected to the first process variation detection component and the second process variation detection component for comparing the current difference between the two components and outputting a current comparison result.

Abstract: A memory refresh system includes a comparative detection circuit, a logic circuit, and a timing circuit. The comparative detection circuit detects a voltage of the storage capacitor of a memory cell of the memory and generates a corresponding digital code by comparing the voltage with a reference voltage. Each memory cell has a corresponding digital code. The combination of the digital codes of the memory cells forms a first state. After a specific period of time, the voltages of the storage capacitors of the memory cells are once detected by the comparative detection circuit, and corresponding digital codes are generated and combined to form a second state. The logic circuit compares the first state and the second state to determining whether or not to change the refresh period of a refresh period detecting process. The timing circuit changes the refresh period according to the determination result of the logic circuit.

Abstract: This disclosure uses a differential sensing and TSV timing control scheme for 3D-IC, which includes a first chip layer of the stacked device having a detecting circuits and a relative high ability driver horizontally coupled to the detecting circuits. A sensing circuit is coupled to the detecting circuits by a horizontal line, a first differential signal driver is coupled to the sensing circuit, horizontally. The Nth chip layer of the stacked device includes a Nth relative high ability driver and a Nth differential signal driver formed on the Nth chip layer. The Nth relative high ability driver is vertically coupled to the first relative high ability driver through one relative low loading TSV and (N?2) TSVs to act as dummy loadings. The TSV and (N?2) TSVs penetrate the stacked device from Nth chip layer to first chip layer. The TSV shares same configuration with the (N?2) TSVs.

Abstract: A memory refresh system includes a comparative detection circuit, a logic circuit, and a timing circuit. The comparative detection circuit detects a voltage of the storage capacitor of a memory cell of the memory and generates a corresponding digital code by comparing the voltage with a reference voltage. Each memory cell has a corresponding digital code. The combination of the digital codes of the memory cells forms a first state. After a specific period of time, the voltages of the storage capacitors of the memory cells are once detected by the comparative detection circuit, and corresponding digital codes are generated and combined to form a second state. The logic circuit compares the first state and the second state to determining whether or not to change the refresh period of a refresh period detecting process. The timing circuit changes the refresh period according to the determination result of the logic circuit.

Abstract: A reference current generator for a resistance type memory and a method thereof is disclosed. The reference current generator comprises N parallel circuit sets. Each of the N parallel circuit sets is formed with at least one first reference element and second reference elements connected in parallel. The number of the first reference elements plus the number of the second reference elements is N. The resistance value of first reference elements (a first resistance value) is not equal to the resistance value of the second reference elements (a second resistance value). An equivalent resistance provided with a equivalent resistance value between the first and second resistance value is formed by connecting the N parallel circuit sets in series between an input terminal and output terminal. A reference current is outputted from the output terminal by applying an operation voltage to the input terminal.

Abstract: The invention discloses a NAND type ROM. The NAND type ROM comprises a plurality of bit lines, a plurality of word lines, a first source line, a second source line, and a plurality of NAND strings. The bit lines comprise a plurality of upper bit lines, first lower and second lower bit lines. The first lower and second lower bit lines are alternately arranged in parallel, and the plurality of word lines are vertically arranged to each bit lines. The first and second source line are respectively connected to the plurality of first and second lower bit lines. The plurality of NAND strings comprise a plurality of first and second NAND strings. The first NAND strings are connected to the upper bit lines, word lines, and first lower bit lines. The second NAND strings are connected to the upper bit lines, word lines, and second lower bit lines.

Abstract: A dual mode accessing signal control apparatus for being used in a dummy cells set of a memory, and a dual mode timing signal generating apparatus comprising a dual mode accessing signal control apparatus are provided. The dual mode accessing signal control apparatus respectively generates a write delay signal and a read signal during the write and the read process. The memory is thereby capable of self-timing its write and the read process, and is able to generate a wordline signal with a shorter width in the write process to ensure an early start to precharging. As a result, the whole duty period of the memory can be shortened.

Abstract: A single-ended differential sense amplifier comprises a dynamic reference voltage generation circuit and a differential sense amplifier circuit. Input data with an input data line voltage is provided to the differential sense amplifier circuit. The input data line voltage also feeds back to the dynamic reference voltage generation circuit, which then generates a dynamic reference voltage based on the input data line voltage. The differential sense amplifier circuit is coupled to the dynamic reference voltage generation circuit and receives the dynamic reference voltage for determining the input data. The dynamic reference voltage increases and the input data line voltage decreases when reading the input data of a logic state, e.g., logic “0.

Abstract: An access unit for a static random access memory (SRAM) is provided. The access unit comprises two inverters. Two different variable voltages are supplied to the two inverters via bitlines to cause an imbalance in the current strengths between the two inverters so that data can be written on the SRAM.

Abstract: A single-ended differential sense amplifier comprises a dynamic reference voltage generation circuit and a differential sense amplifier circuit. Input data with an input data line voltage is provided to the differential sense amplifier circuit. The input data line voltage also feeds back to the dynamic reference voltage generation circuit, which then generates a dynamic reference voltage based on the input data line voltage. The differential sense amplifier circuit is coupled to the dynamic reference voltage generation circuit and receives the dynamic reference voltage for determining the input data. The dynamic reference voltage increases and the input data line voltage decreases when reading the input data of a logic state, e.g., logic “0.

Abstract: A dual mode accessing signal control apparatus for being used in a dummy cells set of a memory, and a dual mode timing signal generating apparatus comprising a dual mode accessing signal control apparatus are provided. The dual mode accessing signal control apparatus respectively generates a write delay signal and a read signal during the write and the read process. The memory is thereby capable of self-timing its write and the read process, and is able to generate a wordline signal with a shorter width in the write process to ensure an early start to precharging. As a result, the whole duty period of the memory can be shortened.

Abstract: An access unit for a static random access memory (SRAM) is provided. The access unit comprises two inverters. Two different variable voltages are supplied to the two inverters via bitlines to cause an imbalance in the current strengths between the two inverters so that data can be written on the SRAM.

Abstract: A multi-block SRAM memory system is described where a single global clock pulse is distributed to each memory block from the central control. At each SRAM memory block a local signal generator uses the globally distributed clock pulse to generate the required memory control pulse signals. By generating the memory control pulses locally, instead of distributing these from the central control the variations in skew are greatly reduced. Thus the required timing relationship between memory control signals can be achieved with smaller timing margins. This allows higher speed memory cycle and more reliable memory operation.

Abstract: The present invention provides a method for eliminating crosstalk (coupling noise) in a metal programmable read only memory. The metal programmable read only memory comprises a plurality of bit lines, a plurality of word lines, a plurality of precharge transistors, and a plurality of clamp transistors. When one of the bit lines is selected, bit lines adjacent to the selected bit line are fixed to a voltage value (VDD, GND or other voltages) by the clamp transistors. The clamping method can not cause voltage drops to the adjacent bit lines, and the crosstalk on the selected bit line can be eliminated simultaneously, so that the problem of read failures caused by the crosstalk in the high-speed metal programmable read only memory can be solved, and a higher speed can be reached.