Abstract: A memory unit with time domain edge delay accumulation for computing-in-memory applications is controlled by a first word line and a second word line. The memory unit includes at least one memory cell, at least one edge-delay cell multiplexor and at least one edge-delay cell. The at least one edge-delay cell includes a weight reader and a driver. The weight reader is configured to receive a weight and a multi-bit analog input voltage and generate a multi-bit voltage according to the weight and the multi-bit analog input voltage. The driver is connected to the weight reader and configured to receive an edge-input signal. The driver is configured to generate an edge-output signal having a delay time according to the edge-input signal and the multi-bit voltage. The delay time of the edge-output signal is positively correlated with the multi-bit analog input voltage multiplied by the weight.

Abstract: A circuit includes a reference voltage node, first and second data lines, a sense amplifier, first and second switching devices coupled between the first and second data lines and first and second input terminals of the sense amplifier, third and fourth switching devices coupled between the first and second data lined and first and second nodes, fifth and sixth switching devices coupled between the first and second nodes and the reference voltage node, and first and second capacitive devices coupled between the first and second nodes and second and first input terminals. Each of the first through fourth switching devices is switched on and each of the fifth and sixth switching devices is switched off in a first operational mode, and each of the first through fourth switching devices is switched off and each of the fifth and sixth switching devices is switched on in a second operational mode.

Abstract: A computation apparatus and a computation method with input swapping are provided. The computation apparatus includes a non-zero detection circuit, a swapper policy circuit, a swapper matrix circuit, and an adder tree. The non-zero detection circuit is configured to receive input vectors, inspect non-zero operands in the input vectors and generate a non-zero indicative signal indicating the non-zero operands. The swapper policy circuit is configured to receive and interpret the non-zero indicative signal, and generate multiplexer (MUX) selection signals for swapping the non-zero operands according to a set of swapping policies. The swapper matrix circuit is configured to receive the input vectors and the MUX selection signal, and perform swapping on operands in the input vectors according to the MUX selection signal. The adder tree is configured to receive the input vectors with the swapped operands and perform additions on the input vectors to output a computation result.

Abstract: A memory test circuit is provided. The memory test circuit is disposed in a memory chip and electrically coupled to a memory macro of the memory chip. A high speed clock receives an input signal and an external clock signal. The input signal includes a plurality of test bits. A finite state machine controller provides a pattern type. A pattern generator generates and provides a test signal to at least one memory cell of the memory chip to write the test signal to the at least one memory cell based on the pattern type and the external clock signal. A test frequency of the test signal is determined based on the high speed clock. An output comparator outputs a comparison signal based on a difference between the test signal and a readout signal corresponding to the test signal read from the at least one memory cell.

Abstract: A memory test circuit is provided. The memory test circuit is disposed in a memory array and including: a test array, including test cells out of memory cells of the memory array; a write multiplexer, configured to selectively output one of a test signal and a reference voltage based on a write measurement signal, wherein the test signal is output to write into at least one test cell and the reference voltage is output to a sense amplifier; and a read multiplexer, configured to selectively receive and output one of a readout signal corresponding to the test signal and an amplified signal based on a read measurement signal, wherein the readout signal is read from the at least one test cell and the amplified signal is obtained for a read margin evaluation from the sense amplifier by amplifying a voltage difference between the readout signal and the reference voltage.

Abstract: A circuit includes a sense amplifier, a first clamping circuit, a second clamping circuit, and a feedback circuit. The first clamping circuit includes first clamping branches coupled in parallel between the sense amplifier and a memory array. The second clamping circuit includes second clamping branches coupled in parallel between the sense amplifier and a reference array. The feedback circuit is configured to selectively enable or disable one or more of the first clamping branches or one or more of the second clamping branches in response to an output data outputted by the sense amplifier.

Abstract: A method generally comprises arranging a plurality of layer combinations into a plurality of groups such that each of the layer combinations is assigned to at least one group. A shifting analysis is performed on a plurality of benchmark circuits for each of the groups. At least one tuning vector value is calculated based, at least in part, on a plurality of criteria vectors of the benchmark circuits. A shift is applied on each of the groups by the tuning vector value and a technology file, such as a 2.5 dimensional RC techfile, is regenerated.

Abstract: The present disclosure relates to a method of RC extraction that provides for a fast development time and easy maintenance. In some embodiments, the method provides a graphical representation of an integrated chip layout having a plurality of integrated chip components. A plurality of pattern based graphical features are then determined. Respective pattern based graphical features define a structural aspect of an integrated chip component. One of the plurality of integrated chip components is defined as a pattern oriented function having inputs of one or more of the pattern based graphical features. The pattern oriented function determines a shape of the one of the plurality of integrated chip components based upon a relation between the plurality of inputs. By determining a shape of an integrated chip component using a pattern oriented function, the complexity of RC profiles can be reduced.

Abstract: A method generally comprises arranging a plurality of layer combinations into a plurality of groups such that each of the layer combinations is assigned to at least one group. A shifting analysis is performed on a plurality of benchmark circuits for each of the groups. At least one tuning vector value is calculated based, at least in part, on a plurality of criteria vectors of the benchmark circuits. A shift is applied on each of the groups by the tuning vector value and a technology file, such as a 2.5 dimensional RC techfile, is regenerated.

Abstract: The present disclosure relates to a method of RC extraction that provides for a fast development time and easy maintenance. In some embodiments, the method provides a graphical representation of an integrated chip layout having a plurality of integrated chip components. A plurality of pattern based graphical features are then determined. Respective pattern based graphical features define a structural aspect of an integrated chip component. One of the plurality of integrated chip components is defined as a pattern oriented function having inputs of one or more of the pattern based graphical features. The pattern oriented function determines a shape of the one of the plurality of integrated chip components based upon a relation between the plurality of inputs. By determining a shape of an integrated chip component using a pattern oriented function, the complexity of RC profiles can be reduced.

Abstract: A method comprises: selecting a circuit pattern or network of circuit patterns in a layout of an integrated circuit (IC) to be fabricating using double patterning technology (DPT). Circuit patterns near the selected circuit pattern or network are grouped into one or more groups. For each group, a respective expected resistance-capacitance (RC) extraction error cost is calculated, which is associated with a mask alignment error, for two different sets of mask assignments. The circuit patterns in the one or more groups are assigned to be patterned by respective photomasks, so as to minimize a total of the expected RC extraction error costs.

Abstract: Provided are a generation device and the like for generating a new vector whose volume can be reduced rapidly when an output pattern derived from a decompressor of a logic circuit under test includes an unspecified bit in relation to the logic circuit under test. The output pattern includes unspecified bits. In step SS1, classification unit classifies the unspecified bits and determines if an unspecified bit is an implied bit or not. The implied bit is an unspecified bit if its value is a logic value determined as logic value 0 or 1 relating to logic bits in the initial vector and according to a predetermined condition (such as compressibility) among bits in the initial vector derived from the upstream logic circuit 1. In step SS1, the unspecified bits which are not implied bits are classified as free bits. The classification unit classifies free bit sets in step SS2, and further classifies free bits to identify compatible free bit sets.