Patents by Inventor MENG FEN CAI

MENG FEN CAI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20100227465
    Abstract: A method for fabricating flash memory devices, e.g., NAND, NOR, is provided. The method includes providing a semiconductor substrate. The method includes forming a second polysilicon layer overlying a plurality of floating gate structures to cause formation of an upper surface provided on the second polysilicon layer. The upper surface has a first recessed region and a second recessed region. The method includes depositing a dielectric material overlying the upper surface to fill the first recessed region and the second recessed region to form a second upper surface region and cover a first elevated region, a second elevated region, and a third elevated region.
    Type: Application
    Filed: December 24, 2009
    Publication date: September 9, 2010
    Applicant: Semiconductor Manufacturing International (Shanghai) Corporation
    Inventors: LILY JIANG, MENG FEN CAI, JIAN GUANG CHANG