Abstract: Embodiments of the present disclosure relates to a semiconductor device structure. The structure includes a source/drain epitaxial feature disposed over a substrate, a first interlayer dielectric (ILD) disposed over the source/drain epitaxial feature, a second ILD disposed over the first ILD. The second ILD includes a first dopant species having an atomic radius equal to or greater than silicon and a second dopant species having an atomic mass less than 15. The structure also includes a first conductive feature disposed in the second ILD, and a second conductive feature disposed over the source/drain epitaxial feature, the second conductive feature extending through the first ILD and in contact with the first conductive feature.

Abstract: A semiconductor device includes a first conductor structure extending along a lateral direction. The semiconductor device includes a first memory film that extends along a vertical direction and is in contact with the first conductor structure. The semiconductor device includes a first semiconductor film that extends along the vertical direction and is in contact with the first memory film. Ends of the first semiconductor film align with ends of the first memory film, respectively. The semiconductor device includes a second conductor structure extending along the vertical direction. The semiconductor device includes a third conductor structure extending along the vertical direction. The semiconductor device includes a fourth conductor structure extending along the vertical direction. The second and fourth conductor structures are coupled to the ends of the first semiconductor film, and the third conductor structure is coupled to a portion of the first semiconductor film between its ends.

Abstract: Some embodiments of the present application are directed towards an integrated circuit (IC). The integrated circuit includes a semiconductor substrate including a logic region and a memory cell region. A logic device is arranged on the logic region. A memory device is arranged on the memory cell region. An isolation structure extends into a top surface of the semiconductor substrate, and laterally separates the logic region from the memory cell region. The isolation structure includes dielectric material and has an uppermost surface and a slanted upper surface extending from the uppermost surface to an edge of the isolation structure proximate to memory cell region.

Abstract: In some embodiments, the present disclosure relates an integrated chip including a substrate. A conductive interconnect feature is arranged over the substrate. The conductive interconnect feature has a base feature portion with a base feature width and an upper feature portion with an upper feature width. The upper feature width is narrower than the base feature width such that the conductive interconnect feature has tapered outer feature sidewalls. An interconnect via is arranged over the conductive interconnect feature. The interconnect via has a base via portion with a base via width and an upper via portion with an upper via width. The upper via width is wider than the base via width such that the interconnect via has tapered outer via sidewalls.

Abstract: A device includes a fin extending from a semiconductor substrate; a gate stack over the fin; a first spacer on a sidewall of the gate stack; a source/drain region in the fin adjacent the first spacer; an inter-layer dielectric layer (ILD) extending over the gate stack, the first spacer, and the source/drain region, the ILD having a first portion and a second portion, wherein the second portion of the ILD is closer to the gate stack than the first portion of the ILD; a contact plug extending through the ILD and contacting the source/drain region; a second spacer on a sidewall of the contact plug; and an air gap between the first spacer and the second spacer, wherein the first portion of the ILD extends across the air gap and physically contacts the second spacer, wherein the first portion of the ILD seals the air gap.

Abstract: A semiconductor device and a method of forming the same are provided. The semiconductor device includes a substrate, a gate structure, a dielectric structure and a contact structure. The substrate has source/drain (S/D) regions. The gate structure is on the substrate and between the S/D regions. The dielectric structure covers the gate structure. The contact structure penetrates through the dielectric structure to connect to the S/D region. A lower portion of a sidewall of the contact structure is spaced apart from the dielectric structure by an air gap therebetween, while an upper portion of the sidewall of the contact structure is in contact with the dielectric structure.

Abstract: In accordance with embodiments, a memory array is formed with a multiple patterning process. In embodiments a first trench is formed within a multiple layer stack and a first conductive material is deposited into the first trench. After the depositing the first conductive material, a second trench is formed within the multiple layer stack, and a second conductive material is deposited into the second trench. The first conductive material and the second conductive material are etched.

Abstract: A ferroelectric memory device and a memory array are provided. The ferroelectric memory device includes a word line; a pair of source/drain electrodes, a channel layer, a work function layer and a ferroelectric layer. The source/drain electrodes are disposed at opposite sides of the word line, and elevated from the word line. The channel layer has a bottom planar portion and wall portions. The bottom planar portion extends along a top surface of the word line, and opposite ends of the bottom planar portion are connected to sidewalls of the source/drain electrodes through opposite ones of the wall portions. The work function layer is electrically connected to the word line, and extends along the bottom planar portion and the wall portions of the channel layer. The ferroelectric layer separates the channel layer from the work function layer.

Abstract: A display may have a pixel array such as a liquid crystal pixel array. The pixel array may be illuminated by a backlight unit that includes an array of light-emitting diodes (LEDs). The backlight unit may determine the type of content in the image data. The backlight unit may decide to prioritize either mitigating halo or mitigating clipping based on the type of content. The determination of the type of content in the image data may be used to determine the brightness values for the LEDs in the LED array. If the content is determined to be a first type of content, at least one given LED in the LED array may have a different brightness value than if the content is determined to be a second, different type of content. Classifying content in the image data may be useful in optimizing visible artifacts such as visible halo and clipping.

Abstract: A semiconductor device is provided. The semiconductor device includes a semiconductor substrate and a first gate stack. An isolation feature is formed in the semiconductor substrate, and a cell region and a peripheral region adjacent to the cell region are defined in the semiconductor substrate. The first gate stack is disposed on the peripheral region of the semiconductor substrate. The first gate stack includes a first dielectric layer and a gate electrode layer disposed on the first dielectric layer and covering a top surface of the first dielectric layer. The first dielectric layer is disposed on the semiconductor substrate and has a concave profile.

Abstract: A method includes the following steps. A photoresist is exposed to a first light-exposure through a first mask, wherein the first mask includes a first stitching region, and a first portion of the photoresist corresponding to a first opaque portion of the first stitching region is unexposed. The photoresist is exposed to a second light-exposure through a second mask, wherein the second mask includes a second stitching region, and a second portion of the photoresist corresponding to a second opaque portion of the second stitching region is unexposed and is overlapping with the first portion of the photoresist.

Abstract: Disclosed is a microwave chemical method for totally extracting fluorine and rare earth from bastnaesite concentrate, including: alkaline conversion defluorination of bastnaesite through microwave irradiation, microwave-assisted leaching of fluorine, solid-liquid separation of leaching solution and microwave-assisted leaching of rare earth. The rare earth hydrochloric acid solution for leaching contains no fluorine ion, so that the fluorine interference of subsequent processes such as impurity removal can be completely avoided; the fluorine and the rare earth are leached with microwaves, which does not need the stirring, so that the automatic control is easy to implement; the fluorine and rare earth leaching speed is high, the leaching time is short and the complete leaching of fluorine and little residual alkali in the slag can be realized by two-time leaching; and no fluorine-containing waste water is discharged, and the total extraction of the rare earth can be realized by one-time leaching.

Abstract: A method for preparing a semiconductor device includes: providing a semiconductor substrate, in which a trench is formed on the semiconductor substrate, a filling layer is formed in the trench, and a void is formed in the filling layer; removing a portion of the filling layer to expose the void; forming a plug, in which the plug is configured to plug the void and extends into the void by at least a preset distance; and removing a portion of the filling layer and remaining the plug with at least a preset height until the filling layer reaches a preset thickness to form a contact hole.

Abstract: A semiconductor package includes a semiconductor die, a redistribution structure and connective terminals. The redistribution structure is disposed on the semiconductor die and includes a first metallization tier disposed in between a pair of dielectric layers. The first metallization tier includes routing conductive traces electrically connected to the semiconductor die and a shielding plate electrically insulated from the semiconductor die. The connective terminals include dummy connective terminals and active connective terminals. The dummy connective terminals are disposed on the redistribution structure and are electrically connected to the shielding plate. The active connective terminals are disposed on the redistribution structure and are electrically connected to the routing conductive traces. Vertical projections of the dummy connective terminals fall on the shielding plate.

Abstract: An integrated circuit device includes a plurality of metal gates each having a metal electrode and a high-? dielectric and a plurality of polysilicon gates each having a polysilicon electrode and conventional (non high-?) dielectrics. The polysilicon gates may have adaptations for operation as high voltage gates including thick dielectric layers and area greater than one ?m2. Polysilicon gates with these adaptations may be operative with gate voltages of 10 V or higher and may be used in embedded memory devices.

Abstract: A memory device includes a first stacking structure, a second stacking structure, a plurality of first isolation structures, gate dielectric layers, channel layers and conductive pillars. The first stacking structure includes a plurality of first gate layers, and a second stacking structure includes a plurality of second gate layers, where the first stacking structure and the second stacking structure are located on a substrate and separated from each other through a trench. The first isolation structures are located in the trench, where a plurality of cell regions are respectively confined between two adjacent first isolation structures of the first isolation structures in the trench, where the first isolation structures each includes a first main layer and a first liner surrounding the first main layer, where the first liner separates the first main layer from the first stacking structure and the second stacking structure.

Abstract: A magnetic resonance guided laser ablation treatment system, including: an optical fiber cooling assembly (400), accommodating and cooling an ablation optical fiber (5); a laser ablation apparatus (200), including a laser generator and a cooling device; a stereotactic driving system (300), accommodating and controlling the position and angle of rotation of the ablation optical fiber (5); and a workstation (100), configured to control the movement of a stereotactic driving system, and generate and display ablation information of the target region during the workflow of the magnetic resonance guided laser ablation treatment system by using the magnetic resonance temperature imaging technology.

Abstract: A semiconductor structure is provided. The semiconductor structure includes a gate structure, disposed over a substrate; a ferroelectric material, disposed over the gate structure; a source structure and a drain structure, disposed above the ferroelectric material; an isolation, surrounding the source structure and the drain structure; and an oxide semiconductor, surrounding a portion of the isolation between the source structure and the drain structure. A method of manufacturing the semiconductor structure is also provided.

Abstract: Various embodiments of the present application are directed to an IC, and associated forming methods. In some embodiments, the IC comprises a memory region and a logic region integrated in a substrate. A plurality of memory cell structures is disposed on the memory region. Each memory cell structure of the plurality of memory cell structures comprises a control gate electrode disposed over the substrate, a select gate electrode disposed on one side of the control gate electrode, and a spacer between the control gate electrode and the select gate electrode. A contact etch stop layer (CESL) is disposed along an upper surface of the substrate, extending upwardly along and in direct contact with a sidewall surface of the select gate electrode within the memory region. A lower inter-layer dielectric layer is disposed on the CESL between the plurality of memory cell structures within the memory region.

Abstract: The present disclosure describes a method for forming (i) input/output (I/O) fin field effect transistors (FET) with polysilicon gate electrodes and silicon oxide gate dielectrics integrated and (ii) non-I/O FETs with metal gate electrodes and high-k gate dielectrics. The method includes depositing a silicon oxide layer on a first region of a semiconductor substrate and a high-k dielectric layer on a second region of the semiconductor substrate; depositing a polysilicon layer on the silicon oxide and high-k dielectric layers; patterning the polysilicon layer to form a first polysilicon gate electrode structure on the silicon oxide layer and a second polysilicon gate electrode structure on the high-k dielectric layer, where the first polysilicon gate electrode structure is wider than the second polysilicon gate electrode structure and narrower than the silicon oxide layer. The method further includes replacing the second polysilicon gate electrode structure with a metal gate electrode structure.