Abstract: A device includes a fin extending from a semiconductor substrate; a gate stack over the fin; a first spacer on a sidewall of the gate stack; a source/drain region in the fin adjacent the first spacer; an inter-layer dielectric layer (ILD) extending over the gate stack, the first spacer, and the source/drain region, the ILD having a first portion and a second portion, wherein the second portion of the ILD is closer to the gate stack than the first portion of the ILD; a contact plug extending through the ILD and contacting the source/drain region; a second spacer on a sidewall of the contact plug; and an air gap between the first spacer and the second spacer, wherein the first portion of the ILD extends across the air gap and physically contacts the second spacer, wherein the first portion of the ILD seals the air gap.

Abstract: In some embodiments, the present disclosure relates an integrated chip including a substrate. A conductive interconnect feature is arranged over the substrate. The conductive interconnect feature has a base feature portion with a base feature width and an upper feature portion with an upper feature width. The upper feature width is narrower than the base feature width such that the conductive interconnect feature has tapered outer feature sidewalls. An interconnect via is arranged over the conductive interconnect feature. The interconnect via has a base via portion with a base via width and an upper via portion with an upper via width. The upper via width is wider than the base via width such that the interconnect via has tapered outer via sidewalls.

Abstract: A semiconductor device and a method of forming the same are provided. The semiconductor device includes a substrate, a gate structure, a dielectric structure and a contact structure. The substrate has source/drain (S/D) regions. The gate structure is on the substrate and between the S/D regions. The dielectric structure covers the gate structure. The contact structure penetrates through the dielectric structure to connect to the S/D region. A lower portion of a sidewall of the contact structure is spaced apart from the dielectric structure by an air gap therebetween, while an upper portion of the sidewall of the contact structure is in contact with the dielectric structure.

Abstract: A semiconductor package includes a semiconductor die, a redistribution structure and connective terminals. The redistribution structure is disposed on the semiconductor die and includes a first metallization tier disposed in between a pair of dielectric layers. The first metallization tier includes routing conductive traces electrically connected to the semiconductor die and a shielding plate electrically insulated from the semiconductor die. The connective terminals include dummy connective terminals and active connective terminals. The dummy connective terminals are disposed on the redistribution structure and are electrically connected to the shielding plate. The active connective terminals are disposed on the redistribution structure and are electrically connected to the routing conductive traces. Vertical projections of the dummy connective terminals fall on the shielding plate.

Abstract: A semiconductor package including a ring structure with one or more indents and a method of forming are provided. The semiconductor package may include a substrate, a first package component bonded to the substrate, wherein the first package component may include a first semiconductor die, a ring structure attached to the substrate, wherein the ring structure may encircle the first package component in a top view, and a lid structure attached to the ring structure. The ring structure may include a first segment, extending along a first edge of the substrate, and a second segment, extending along a second edge of the substrate. The first segment and the second segment may meet at a first corner of the ring structure, and a first indent of the ring structure may be disposed at the first corner of the ring structure.

Abstract: An interposer includes a first surface on a first side of the interposer and a second surface on a second side of the interposer, wherein the first and the second sides are opposite sides. A first probe pad is disposed at the first surface. An electrical connector is disposed at the first surface, wherein the electrical connector is configured to be used for bonding. A through-via is disposed in the interposer. Front-side connections are disposed on the first side of the interposer, wherein the front-side connections electrically couple the through-via to the probe pad.

Abstract: The invention provides a supporting substrate and method for fabricating the same. The supporting substrate includes: a substrate; a first surface metal layer formed on the substrate, wherein the first surface metal layer has a first opening; a second surface metal layer formed on the substrate and disposed oppositely to the first surface metal layer, wherein the substrate has a through hole, and the through hole is formed along the first opening to expose the second surface metal layer; a protective layer formed on the first surface metal layer and the second surface metal layer, wherein the protective layer has a second opening which exposes the through hole; and a conductive bump formed in the through hole, the first opening and the second opening, wherein the conductive bump is electrically connected to the second surface metal layer.

Abstract: An interposer includes a first surface on a first side of the interposer and a second surface on a second side of the interposer, wherein the first and the second sides are opposite sides. A first probe pad is disposed at the first surface. An electrical connector is disposed at the first surface, wherein the electrical connector is configured to be used for bonding. A through-via is disposed in the interposer. Front-side connections are disposed on the first side of the interposer, wherein the front-side connections electrically couple the through-via to the probe pad.

Abstract: The invention provides a high density package substrate and a method for fabricating the same. A double-sided copper clad laminate containing an upper copper foil and a lower copper foil is provided. A bottom pad is disposed on the lower copper foil, aligned to a predetermined position of a through hole. The through hole is formed by laser drilling through the upper copper foil and the substrate, but not through the bottom pad. A seed layer is formed conformally lining the through hole, and a metal layer is formed on the seed layer by plating to form a plated through hole (PTH).

Abstract: The invention provides a supporting substrate and method for fabricating the same. The supporting substrate includes: a substrate; a first surface metal layer formed on the substrate, wherein the first surface metal layer has a first opening; a second surface metal layer formed on the substrate and disposed oppositely to the first surface metal layer, wherein the substrate has a through hole, and the through hole is formed along the first opening to expose the second surface metal layer; a protective layer formed on the first surface metal layer and the second surface metal layer, wherein the protective layer has a second opening which exposes the through hole; and a conductive bump formed in the through hole, the first opening and the second opening, wherein the conductive bump is electrically connected to the second surface metal layer.

Abstract: A method for forming a wire bonding substrate is disclosed. A substrate comprising a first surface and a second surface is provided. A through hole is formed in the substrate. A conductive layer is formed on the first surface and the second surface of the substrate and covers a sidewall of the through hole. The conductive layer on the first surface of the substrate is patterned to form at least a first conductive pad, and the conductive layer on the second surface of the substrate is patterned to form at least a second conductive pad. An insulating layer is formed on the first surface and the second surface of the substrate and covers the first conductive pad and the second conductive pad. The insulating layer is recessed until top surfaces of the first conductive pad and the second conductive pad are exposed. A first metal layer is electroplated on the first conductive pad by applying current from the second conductive pad to the first conductive pad through the conductive layer passing the through hole.

Abstract: The invention provides a high density package substrate and a method for fabricating the same. A double-sided copper clad laminate containing an upper copper foil and a lower copper foil is provided. A bottom pad is disposed on the lower copper foil, aligned to a predetermined position of a through hole. The through hole is formed by laser drilling through the upper copper foil and the substrate, but not through the bottom pad. A seed layer is formed conformally lining the through hole, and a metal layer is formed on the seed layer by plating to form a plated through hole (PTH).

Abstract: A method for forming a wire bonding substrate is disclosed. A substrate comprising a first surface and a second surface is provided. A through hole is formed in the substrate. A conductive layer is formed on the first surface and the second surface of the substrate and covers a sidewall of the through hole. The conductive layer on the first surface of the substrate is patterned to form at least a first conductive pad, and the conductive layer on the second surface of the substrate is patterned to form at least a second conductive pad. An insulating layer is formed on the first surface and the second surface of the substrate and covers the first conductive pad and the second conductive pad. The insulating layer is recessed until top surfaces of the first conductive pad and the second conductive pad are exposed. A first metal layer is electroplated on the first conductive pad by applying current from the second conductive pad to the first conductive pad through the conductive layer passing the through hole.