Abstract: A semiconductor device includes a first source/drain structure and a second source/drain structure of a first transistor. The semiconductor device includes a first source/drain structure and a second source/drain structure of a first transistor. The semiconductor device includes a third source/drain structure and a fourth source/drain structure of a second transistor. The second source/drain structure and the third source/drain structure merges as a common source/drain structure. The semiconductor device includes a first interconnect structure extending along a first lateral direction and disposed above the common source/drain structure. The semiconductor device includes a first dielectric structure interposed between the first interconnect structure and the common source/drain structure.

Abstract: A method of generating a layout diagram including a first level of metallization (M_1st level) including: identifying, in the layout diagram, a filler cell and a first functional cell substantially abutting the filler cell; the first functional cell including first and second side boundaries, first wiring patterns in the M_1st level, and representing corresponding first conductors in the first functional cell region; and first and second groups of cut patterns overlying corresponding portions of the first wiring patterns and being substantially aligned with the corresponding first and second side boundaries; adjusting one or more locations of corresponding one or more selected cut patterns of the second group thereby correspondingly elongating one or more selected ones of the first wiring patterns so as to be corresponding first elongated wiring patterns which extend across the second boundary of the first functional cell into the filler cell.

Abstract: A method of generating a layout diagram including a first level of metallization (M_1st level) including: identifying, in the layout diagram, a filler cell and a first functional cell substantially abutting the filler cell; the first functional cell including first and second side boundaries, first wiring patterns in the M_1st level, and representing corresponding first conductors in the first functional cell region; and first and second groups of cut patterns overlying corresponding portions of the first wiring patterns and being substantially aligned with the corresponding first and second side boundaries; adjusting one or more locations of corresponding one or more selected cut patterns of the second group thereby correspondingly elongating one or more selected ones of the first wiring patterns so as to be corresponding first elongated wiring patterns which extend across the second boundary of the first functional cell into the filler cell.

Abstract: A compressor circuit includes a plurality of inputs, a sum output, and a plurality of XOR circuits. Each XOR circuit of the plurality of XOR circuits includes first, second and third inputs, and a first output. The XOR circuit is configured to generate a logic value A?B?C at the first output, where A, B and C are logic values at the corresponding first, second and third inputs, and “?” is the XOR logic operation. The plurality of XOR circuits includes first and second XOR circuits. The first, second and third inputs of the first XOR circuit are coupled to corresponding inputs among the plurality of inputs of the compressor circuit. The first output of the first XOR circuit is coupled to the first input of the second XOR circuit. The first output of the second XOR circuit is coupled to the sum output.

Abstract: A compressor circuit includes a plurality of inputs, a sum output, and a plurality of XOR circuits. Each XOR circuit of the plurality of XOR circuits includes first, second and third inputs, and a first output. The XOR circuit is configured to generate a logic value A?B?C at the first output, where A, B and C are logic values at the corresponding first, second and third inputs, and “?” is the XOR logic operation. The plurality of XOR circuits includes first and second XOR circuits. The first, second and third inputs of the first XOR circuit are coupled to corresponding inputs among the plurality of inputs of the compressor circuit. The first output of the first XOR circuit is coupled to the first input of the second XOR circuit. The first output of the second XOR circuit is coupled to the sum output.

Abstract: A circuit includes a clock trigger block and a logic circuit. The logic circuit is configured to output a signal to the clock trigger block based on a logic level of an enable signal received at the logic circuit. The clock trigger block is configured to output an output signal response to a clock signal received at the clock trigger block and the signal received from the logic circuit.

Abstract: A circuit includes a clock trigger block and a logic circuit. The logic circuit is configured to output a signal to the clock trigger block based on a logic level of an enable signal received at the logic circuit. The clock trigger block is configured to output an output signal response to a clock signal received at the clock trigger block and the signal received from the logic circuit.