Abstract: A structure of dynamic random access memory with slanted active regions, comprising: a substrate; a plurality of slanted active regions formed on the substrate, wherein each of the plurality of slanted active regions has a bit line contact; a plurality of word line regions formed on the substrate to control transistors of the dynamic random access memory; a plurality of bit line regions formed on the substrate, wherein each of the bit line regions cross the bit line contact hole so that the bit line contact hole is completely covered by the bit line regions; a plurality of capacitors formed between the plurality of bit line regions.