Patents by Inventor Meng Jhe Tsai

Meng Jhe Tsai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11934027
    Abstract: An optical system affixed to an electronic apparatus is provided, including a first optical module, a second optical module, and a third optical module. The first optical module is configured to adjust the moving direction of a first light from a first moving direction to a second moving direction, wherein the first moving direction is not parallel to the second moving direction. The second optical module is configured to receive the first light moving in the second moving direction. The first light reaches the third optical module via the first optical module and the second optical module in sequence. The third optical module includes a first photoelectric converter configured to transform the first light into a first image signal.
    Type: Grant
    Filed: June 21, 2022
    Date of Patent: March 19, 2024
    Assignee: TDK TAIWAN CORP.
    Inventors: Chao-Chang Hu, Chih-Wei Weng, Chia-Che Wu, Chien-Yu Kao, Hsiao-Hsin Hu, He-Ling Chang, Chao-Hsi Wang, Chen-Hsien Fan, Che-Wei Chang, Mao-Gen Jian, Sung-Mao Tsai, Wei-Jhe Shen, Yung-Ping Yang, Sin-Hong Lin, Tzu-Yu Chang, Sin-Jhong Song, Shang-Yu Hsu, Meng-Ting Lin, Shih-Wei Hung, Yu-Huai Liao, Mao-Kuo Hsu, Hsueh-Ju Lu, Ching-Chieh Huang, Chih-Wen Chiang, Yu-Chiao Lo, Ying-Jen Wang, Shu-Shan Chen, Che-Hsiang Chiu
  • Publication number: 20220293471
    Abstract: A method of forming a semiconductor device includes: forming a metal gate structure over a fin that protrudes above a substrate, the metal gate structure being surrounded by an interlayer dielectric (ILD) layer; recessing the metal gate structure below an upper surface of the ILD layer distal from the substrate; after the recessing, forming a first dielectric layer over the recessed metal gate structure; forming an etch stop layer (ESL) over the first dielectric layer and the ILD layer; forming a second dielectric layer over the ESL; performing a first dry etch process to form an opening that extends through the second dielectric layer, through the ESL, and into the first dielectric layer; after the first dry etch process, performing a wet etch process to clean the opening; and after the wet etch process, performing a second dry etch process to extend the opening through the first dielectric layer.
    Type: Application
    Filed: May 25, 2021
    Publication date: September 15, 2022
    Inventors: Meng Jhe Tsai, Hong-Jie Yang, Meng-Chun Chang, Hao Chiang, Chia-Ying Lee, Huan-Just Lin, Chuan Chang