Abstract: An apparatus includes: a first image capture module, a second image capture module, and a first projector. The first image capture module has a first optical axis forming an angle from approximately 70° to approximately 87° with respect to the surface of a carrier. The second image capture module has a first optical axis forming an angle of approximately 90° with respect to the surface of the carrier. The first projector has a first optical axis forming an angle from approximately 40° to approximately 85° with respect to the surface of the carrier.

Abstract: The present disclosure relates to a semiconductor device package including a substrate, a semiconductor device and an underfill. The substrate has a first surface and a second surface angled with respect to the first surface. The semiconductor device is mounted on the first surface of the substrate and has a first surface facing the first surface of the substrate and a second surface angled with respect to the first surface of the substrate. The underfill is disposed between the first surface of the semiconductor device and the first surface of the substrate. The second surface of the substrate is located in the substrate and external to a vertical projection of the semiconductor device on the first surface of the substrate.

Abstract: A semiconductor device package includes a substrate, a first electronic component, a second electronic component, a heat dissipation lid and a thermal isolation. The substrate has a surface. The first electronic component and the second electronic component are over the surface of the substrate and arranged along a direction substantially parallel to the surface. The first electronic component and the second electronic component are separated by a space therebetween. The heat dissipation lid is over the first electronic component and the second electronic component. The heat dissipation lid defines one or more apertures at least over the space between the first electronic component and the second electronic component. The thermal isolation is in the one or more apertures of the heat dissipation lid.

Abstract: A semiconductor package structure includes: (1) a first substrate; (2) at least one first semiconductor element attached to the first substrate; and (3) a second substrate including a plurality of thermal vias and a plurality of conductive vias, wherein one end of each of the thermal vias directly contacts the first semiconductor element.

Abstract: A semiconductor package includes a filler composition, wherein the filler composition includes particles each including both carbon and silica, wherein the filler composition is substantially devoid of alumina or silicon carbide, and the filler composition has a weight ratio of carbon to silica of at least greater than 1.0.

Abstract: A semiconductor package structure includes a first substrate, at least one first semiconductor element and a second substrate. The first semiconductor element is attached to the first substrate. The second substrate defines a cavity and includes a plurality of thermal vias. One end of each of the thermal vias is exposed in the cavity, and the first semiconductor element is disposed within the cavity and thermally connected to the thermal vias.

Abstract: A semiconductor package structure includes a first substrate, at least one first semiconductor element and a second substrate. The first semiconductor element is attached to the first substrate. The second substrate defines a cavity and includes a plurality of thermal vias. One end of each of the thermal vias is exposed in the cavity, and the first semiconductor element is disposed within the cavity and thermally connected to the thermal vias.

Abstract: The present disclosure relates to a semiconductor device package including a substrate, a semiconductor device and an underfill. The substrate has a first surface and a second surface angled with respect to the first surface. The semiconductor device is mounted on the first surface of the substrate and has a first surface facing the first surface of the substrate and a second surface angled with respect to the first surface of the substrate. The underfill is disposed between the first surface of the semiconductor device and the first surface of the substrate. The second surface of the substrate is located in the substrate and external to a vertical projection of the semiconductor device on the first surface of the substrate.

Abstract: The present disclosure relates to a filler composition for a semiconductor package. The filler composition comprises carbon and silica.

Abstract: Apparatuses and methods are described for separating glass sheets from glass ribbons. In one embodiment, a glass substrate separation apparatus comprises a support nosing. The support nosing comprises a nosing material having a Shore hardness greater than 64A and less than or equal to 80A and a coefficient of friction less than or equal to 1.2 relative to a glass substrate. The apparatus also comprises a scoring device opposing the support nosing and an actuator coupled to the support nosing for engaging the support nosing with the glass substrate.

Abstract: A semiconductor package includes a substrate and a semiconductor device. The semiconductor device includes a body having a center, a layer disposed adjacent to the body, and a plurality of conductive pillars configured to electrically connect the semiconductor device to the substrate. The layer defines a plurality of openings. Each of the plurality of conductive pillars extends at least partially through a corresponding one of the plurality of openings. An offset between a first central axis of the each of the plurality of conductive pillars and a second central axis of the corresponding one of the plurality of openings varies with distance between the first central axis and the center of the body. The second central axis of the corresponding one of the plurality of openings is disposed between the first central axis of the each of the plurality of conductive pillars and the center of the body.

Abstract: A semiconductor package includes a substrate and a semiconductor device. The semiconductor device includes a body having a center, a layer disposed adjacent to the body, and a plurality of conductive pillars configured to electrically connect the semiconductor device to the substrate. The layer defines a plurality of openings. Each of the plurality of conductive pillars extends at least partially through a corresponding one of the plurality of openings. An offset between a first central axis of the each of the plurality of conductive pillars and a second central axis of the corresponding one of the plurality of openings varies with distance between the first central axis and the center of the body. The second central axis of the corresponding one of the plurality of openings is disposed between the first central axis of the each of the plurality of conductive pillars and the center of the body.