Abstract: The present disclosure relates to an integrated chip. The integrated chip includes a substrate. A first conductive feature is over the substrate. A second conductive feature is over the substrate and is adjacent to the first conductive feature. The first and second conductive features are separated by a cavity. A dielectric liner extends from the first conductive feature to the second conductive feature along a bottom of the cavity and further extends along opposing sidewalls of the first and second conductive features. A dielectric cap covers and seals the cavity. The dielectric cap has a top surface that is approximately planar with top surfaces of the first and second conductive features. The first conductive feature and the second conductive feature comprise graphene intercalated with one or more metals.

Abstract: An RF signal processing device includes multiple first signal receive paths receiving multiple first signals, multiple second signal receive paths receiving multiple second signals and a radio transceiver. The radio transceiver includes a first signal-processing circuit designed for processing the first signals, a second signal-processing circuit designed for processing the second signals, multiple first receive ports coupled to the first signal-processing circuit, multiple second receive ports coupled to the second signal-processing circuit, a first switch and a tunnel device. The first switch is coupled between at least one first receive port and the first signal-processing circuit. The tunnel device is coupled between the first switch and the second signal-processing circuit. The at least one first receive port coupled to the first switch is utilized to receive the first signal or the second signal.

Abstract: A three-dimensional integrated circuit testing apparatus comprises a probe card configured to couple a device-under-test of a three-dimensional integrated circuit with an automatic testing equipment board having a plurality of testing modules, wherein the probe card comprises a plurality of known good dies of the three-dimensional integrated circuit, a plurality of interconnects of the three-dimensional integrated circuit and a plurality of probe contacts, wherein the probe contacts are configured to couple the probe card with testing contacts of the device-under-test of the three-dimensional integrated circuit.

Abstract: A method of shielding through silicon vias (TSVs) in a passive interposer includes doping a substrate with positive ions, and implanting positive ions in an upper portion of the substrate, such that the substrate has at least a p-doped portion and a heavily p-doped upper portion. The method further includes forming an interlayer dielectric (ILD) above the heavily p-doped upper portion. The method further includes forming a plurality of through silicon vias (TSVs) through the ILD and the substrate, such that the passive interposer is configured to electrically couple at least one structure above and below the passive interposer. The method further includes forming, between pairs of TSVs of the plurality of TSVs, a plurality of shielding lines through the interlayer dielectric, the shielding lines configured to electrically couple the heavily p-doped upper portion of the substrate and at least one interconnect structure above the ILD.

Abstract: A method comprises analyzing front side conductive patterns and back side conductive patterns on a semiconductor interposer using a machine implemented RC extraction tool, and outputting data representing a plurality of respective RC nodes from the RC extraction tool to a tangible persistent machine readable storage medium. A substrate mesh model of the semiconductor interposer is generated, having a plurality of substrate mesh nodes. Each substrate mesh node is connected to adjacent ones of the plurality of substrate mesh nodes by respective substrate impedance elements. A set of inputs to a timing analysis tool is formed. The plurality of RC nodes are connected to ones of the plurality of substrate mesh nodes of the substrate mesh model. The set of inputs is stored in a tangible machine readable storage medium.

Abstract: A method of shielding through silicon vias (TSVs) in a passive interposer includes doping a substrate with positive ions, and implanting positive ions in an upper portion of the substrate, such that the substrate has at least a p-doped portion and a heavily p-doped upper portion. The method further includes forming an interlayer dielectric (ILD) above the heavily p-doped upper portion. The method further includes forming a plurality of through silicon vias (TSVs) through the ILD and the substrate, such that the passive interposer is configured to electrically couple at least one structure above and below the passive interposer. The method further includes forming, between pairs of TSVs of the plurality of TSVs, a plurality of shielding lines through the interlayer dielectric, the shielding lines configured to electrically couple the heavily p-doped upper portion of the substrate and at least one interconnect structure above the ILD.

Abstract: A passive interposer apparatus with a shielded through silicon via (TSV) configuration is disclosed. The apparatus includes a p-doped substrate, wherein at least an upper portion of the p-doped substrate is heavily p-doped. An interlayer dielectric layer (ILD) is disposed over the upper portion of the p-doped substrate. A plurality of through silicon vias (TSVs) are formed through the ILD and the p-doped substrate. A plurality of shielding lines disposed between the TSVs electrically couple respective second metal contact pads to the upper portion of the p-doped substrate.

Abstract: A passive interposer apparatus with a shielded through silicon via (TSV) configuration is disclosed. The apparatus includes a p-doped substrate, wherein at least an upper portion of the p-doped substrate is heavily p-doped. An interlayer dielectric layer (ILD) is disposed over the upper portion of the p-doped substrate. A plurality of through silicon vias (TSVs) are formed through the ILD and the p-doped substrate. A plurality of shielding lines disposed between the TSVs electrically couple respective second metal contact pads to the upper portion of the p-doped substrate.

Abstract: A method comprises analyzing front side conductive patterns and back side conductive patterns on a semiconductor interposer using a machine implemented RC extraction tool, and outputting data representing a plurality of respective RC nodes from the RC extraction tool to a tangible persistent machine readable storage medium. A substrate mesh model of the semiconductor interposer is generated, having a plurality of substrate mesh nodes. Each substrate mesh node is connected to adjacent ones of the plurality of substrate mesh nodes by respective substrate impedance elements. A set of inputs to a timing analysis tool is formed. The plurality of RC nodes are connected to ones of the plurality of substrate mesh nodes of the substrate mesh model. The set of inputs is stored in a tangible machine readable storage medium.

Abstract: An interconnection component includes a plurality of through-substrate vias (TSVs) penetrating through a substrate. The plurality of TSVs includes an active TSV having a first end and a second end. The first end of the active TSV is electrically coupled to a signal-providing circuit. The second end of the active TSV is electrically coupled to an additional package component bonded to the interconnection component. The plurality of TSVs further includes a dummy TSV having a first end and a second end, wherein the first end is electrically coupled to the signal-providing circuit, and wherein the second end is open ended.