Abstract: The present invention discloses a metal-free perovskite film and metal-free perovskite piezoelectric nanogenerators comprising the film. The metal-free perovskite film is organic, lead-free and metal-free. The open-circuit voltage of the metal-free perovskite piezoelectric nanogenerators can reach 9˜16 V and the short-circuit current of the metal-free perovskite piezoelectric nanogenerators can reach 38˜55 nA. Also, the metal-free perovskite piezoelectric nanogenerators can be used as self-powered strain sensor of human-machine interface application and be adopted in in vitro electrical stimulation devices.

Abstract: Provided is a method for synthesizing a perovskite quantum dot film, including: preparing a cellulose nanocrystal (CNC) solution, wherein the CNC solution includes a plurality of CNCs with sulfate groups; preparing a precursor solution; mixing the CNC solution and the precursor solution to form a mixed solution; and filtering and drying the mixed solution to form a perovskite quantum dot film.

Abstract: Provided is a method for synthesizing a perovskite quantum dot film, including: preparing a cellulose nanocrystal (CNC) solution, wherein the CNC solution includes a plurality of CNCs with sulfate groups; preparing a precursor solution; mixing the CNC solution and the precursor solution to form a mixed solution; and filtering and drying the mixed solution to form a perovskite quantum dot film.

Abstract: Embodiments of the present disclosure describe a photodetector and/or photovoltaic device comprising a semiconducting substrate and a solution including at least GQD and PEDOT:PSS, the solution deposited as a layer on the semiconducting substrate. Embodiments of the present disclosure further describe a method of fabricating a photodetector and/or photovoltaic device comprising contacting an amount of GQD with PEDOT:PSS sufficient to form a solution; and depositing the solution as a layer on a semiconducting substrate.

Abstract: Embodiments of the present disclosure describe a photodetector and/or photovoltaic device comprising a semiconducting substrate and a solution including at least GQD and PEDOT:PSS, the solution deposited as a layer on the semiconducting substrate. Embodiments of the present disclosure further describe a method of fabricating a photodetector and/or photovoltaic device comprising contacting an amount of GQD with PEDOT:PSS sufficient to form a solution; and depositing the solution as a layer on a semiconducting substrate.

Abstract: An optical film including a first layer and a second layer disposed on the first layer and attached to the first layer is provided. The first layer has a plurality of micro-structures respectively extending along a first direction and arranged side by side at an interval. The micro-structures protrude toward the second layer. A first pitch exists between each micro-structure and an adjacent micro-structure in a side-by-side arrangement direction. The first pitch is greater than 10 times a wavelength of an incident light. Moreover, a display device including the foregoing optical film is also provided.

Abstract: The present invention provides an optical film. The optical film includes a first light-guiding layer, a second light-guiding layer, and at least one light absorption member. The first light-guiding layer has a first light incident surface, a first light-emitting surface, and an accommodating recessed portion formed on the first light incident surface. The second light-guiding layer is disposed on the first light incident surface, and has a second light incident surface, a second light-emitting surface, and a light-guiding member formed on the second light-emitting surface. Each light-guiding member is disposed on each accommodating recessed portion respectively, and each light-guiding member has a top portion, a bottom portion, and a side surface connecting the top portion and the bottom portion.

Abstract: Embodiments of the present disclosure describe a photodetector and/or photovoltaic device comprising a semiconducting substrate and a solution including at least GQD and PEDOT:PSS, the solution deposited as a layer on the semiconducting substrate. Embodiments of the present disclosure further describe a method of fabricating a photodetector and/or photovoltaic device comprising contacting an amount of GQD with PEDOT:PSS sufficient to form a solution; and depositing the solution as a layer on a semiconducting substrate.

Abstract: An optical film including a first layer and a second layer disposed on the first layer and attached to the first layer is provided. The first layer has a plurality of micro-structures respectively extending along a first direction and arranged side by side at an interval. The micro-structures protrude toward the second layer. A first pitch exists between each micro-structure and an adjacent micro-structure in a side-by-side arrangement direction. The first pitch is greater than 10 times a wavelength of an incident light. Moreover, a display device including the foregoing optical film is also provided.

Abstract: The present invention provides an optical film. The optical film includes a first light-guiding layer, a second light-guiding layer, and at least one light absorption member. The first light-guiding layer has a first light incident surface, a first light-emitting surface, and an accommodating recessed portion formed on the first light incident surface. The second light-guiding layer is disposed on the first light incident surface, and has a second light incident surface, a second light-emitting surface, and a light-guiding member formed on the second light-emitting surface. Each light-guiding member is disposed on each accommodating recessed portion respectively, and each light-guiding member has a top portion, a bottom portion, and a side surface connecting the top portion and the bottom portion.

Abstract: Embodiments of the present disclosure describe a solar cell comprising a first monolayer and a second monolayer, the first monolayer and the second monolayer forming a monolayer p-n lateral heterojunction with an atomically sharp interface; and a substrate, the substrate and the monolayer p-n lateral heterojunction forming a solar cell. Embodiments of the present disclosure further describe a method of making a solar cell comprising growing a first monolayer on a first substrate; growing a second monolayer on the first substrate sufficient to form a monolayer p-n lateral heterojunction with an atomically sharp interface; and transferring the monolayer p-n lateral heterojunction from the first substrate to a second substrate sufficient to form a solar cell.

Abstract: Embodiments of the present disclosure describe a photodetector and/or photovoltaic device comprising a semiconducting substrate and a solution including at least GQD and PEDOT:PSS, the solution deposited as a layer on the semiconducting substrate. Embodiments of the present disclosure further describe a method of fabricating a photodetector and/or photovoltaic device comprising contacting an amount of GQD with PEDOT:PSS sufficient to form a solution; and depositing the solution as a layer on a semiconducting substrate.

Abstract: A method of forming a non-continuous line pattern includes forming a DSA material layer on a substrate, performing a phase separation of the DSA material layer to form an ordered periodic pattern including a plurality of first polymer structures and the second polymer structures arranged alternately, forming a first mask to cover a first portion of the ordered periodic pattern, performing a first etching process to remove a portion of the first polymer structures exposed by the first mask, removing the first mask, forming a second mask to cover a second portion of the ordered periodic pattern, with an interval to the first portion of the ordered periodic pattern, performing a second etching process to remove a portion of the second polymer structures exposed by the second mask, and removing the second mask. The remaining first polymer structures and the remaining second polymer structures are not connected to each other.

Abstract: A method of forming a non-continuous line pattern includes forming a DSA material layer on a substrate, performing a phase separation of the DSA material layer to form an ordered periodic pattern including a plurality of first polymer structures and the second polymer structures arranged alternately, forming a first mask to cover a first portion of the ordered periodic pattern, performing a first etching process to remove a portion of the first polymer structures exposed by the first mask, removing the first mask, forming a second mask to cover a second portion of the ordered periodic pattern, with an interval to the first portion of the ordered periodic pattern, performing a second etching process to remove a portion of the second polymer structures exposed by the second mask, and removing the second mask. The remaining first polymer structures and the remaining second polymer structures are not connected to each other.

Abstract: A method of forming a non-continuous line pattern includes forming a DSA material layer on a substrate, performing a phase separation of the DSA material layer to form an ordered periodic pattern including a plurality of first polymer structures and the second polymer structures arranged alternately, forming a first mask to cover a first portion of the ordered periodic pattern, performing a first etching process to remove a portion of the first polymer structures exposed by the first mask, removing the first mask, forming a second mask to cover a second portion of the ordered periodic pattern, with an interval to the first portion of the ordered periodic pattern, performing a second etching process to remove a portion of the second polymer structures exposed by the second mask, and removing the second mask. The remaining first polymer structures and the remaining second polymer structures are not connected to each other.

Abstract: A method of adjusting channel widths of semiconductive devices includes providing a substrate divided into a first region and a second region, wherein the substrate comprises numerous fins. A first implantation process is performed on the fins within the first region. Then, a second implantation process is performed on the fins within the second region, wherein the first implantation process and the second implantation process are different from each other in at least one of the conditions comprising dopant species, dopant dosage or implantation energy. After that, part of the fins within the first region and the second region are removed simultaneously to form a plurality of first recesses within the first region and a plurality of second recesses within the second region. Finally, a first epitaxial layer and a second epitaxial layer are formed to fill up each first recess and each second recess, respectively.

Abstract: A method of adjusting channel widths of semiconductive devices includes providing a substrate divided into a first region and a second region, wherein the substrate comprises numerous fins. A first implantation process is performed on the fins within the first region. Then, a second implantation process is performed on the fins within the second region, wherein the first implantation process and the second implantation process are different from each other in at least one of the conditions comprising dopant species, dopant dosage or implantation energy. After that, part of the fins within the first region and the second region are removed simultaneously to form a plurality of first recesses within the first region and a plurality of second recesses within the second region. Finally, a first epitaxial layer and a second epitaxial layer are formed to fill up each first recess and each second recess, respectively.

Abstract: A method of forming a non-continuous line pattern includes forming a DSA material layer on a substrate, performing a phase separation of the DSA material layer to form an ordered periodic pattern including a plurality of first polymer structures and the second polymer structures arranged alternately, forming a first mask to cover a first portion of the ordered periodic pattern, performing a first etching process to remove a portion of the first polymer structures exposed by the first mask, removing the first mask, forming a second mask to cover a second portion of the ordered periodic pattern, with an interval to the first portion of the ordered periodic pattern, performing a second etching process to remove a portion of the second polymer structures exposed by the second mask, and removing the second mask. The remaining first polymer structures and the remaining second polymer structures are not connected to each other.

Abstract: An ExpressCard adapter able to accept a PCI-E-type or a USB-type ExpressCard in a single ExpressCard slot includes the ExpressCard slot, a PCI-E port, a data conversion unit, a switch unit, and a detection unit. The data conversion unit is connected to the PCI-E port, and converts between USB data and PCI-E data. The switch unit connects the ExpressCard slot to the PCI-E port or to the data conversion unit. The detection unit detects the type of ExpressCard which is inserted and controls the switch unit to connect the ExpressCard slot either to the PCI-E port or to the data conversion unit as required.

Abstract: A control system for a server includes a control chip, a switch module, a hardware power module, a software power module, a power chip, and a basement management controller (BMC) chip. The hardware power module and the software power module output first and second power signals, respectively. The control chip outputs corresponding state signals according to a control signal outputted by the BMC chip. The switch module selectively outputs the first or the second power signals to the power supply chip, to control the power supply chip to perform corresponding power operations.