Abstract: A sensing device includes a first III-V compound stack and a second III-V compound stack. The first III-V compound stack has a first sensing area, and the second III-V compound stack has a second sensing area. A passivation layer fully covers the second sensing area. The first III-V compound stack is physically separated from the second III-V compound stack, and has material compositions and structures same as the second III-V compound stack.

Abstract: A sensing device includes a first III-V compound stack and a second III-V compound stack. The first III-V compound stack has a first sensing area, and the second III-V compound stack has a second sensing area. A passivation layer fully covers the second sensing area. The first III-V compound stack is physically separated from the second III-V compound stack, and has material compositions and structures same as the second III-V compound stack.

Abstract: A sensing device includes a semiconductor structure, a substrate, a first electrode and a second electrode, and a heater. A sensing area arranged on the top side of the semiconductor structure. The substrate is located under the bottom side of the semiconductor. The first electrode and the second electrode are arranged on the top side of the semiconductor structure. The heater is disposed on the semiconductor structure and separated from the sensing area by a distance less than 100 ?m.

Abstract: A positioning and orientation data analysis system for air vehicles includes an image sensor module, a positioning and orientation module, and a processor module. The image sensor module captures a map image of a region and has an internal direction parameter. The positioning and orientation module generates a positioning and orientation external direction parameter from external satellite positioning information and navigation coordinate information that it tracks. The processor module, which is electrically coupled to the image sensor module and the positioning and orientation module, generates an image external direction parameter by using aerial triangulation of the map image; and then, by comparing this parameter with the positioning and orientation external direction parameter, generates a boresight angle parameter and a lever arm parameter.

Abstract: This disclosure relates to a light-emitting apparatus comprising a submount, a chip carrier formed on the submount, a light-emitting chip formed on the chip carrier, a reflecting cup formed on the submount and enclosing the light-emitting chip and the chip carrier, and a transparent encapsulating material for encapsulating the light-emitting chip.

Abstract: A light-emitting device is disclosed. The light-emitting device comprises an epitaxial structure comprising a lower cladding layer of first conductivity type, an active layer comprising InGaN or AlGaInN on the lower cladding layer, and an upper cladding layer of second conductivity type on the active layer; a tunneling structure on the epitaxial structure comprising a first tunneling layer of second conductivity type with a doping concentration greater than 6×1019/cm3 on the upper cladding layer, and a second tunneling layer of first conductivity type with a doping concentration greater than 6×1019/cm3 on the first tunneling layer; and a current spreading layer of first conductivity type comprising AlInN on the tunneling structure.

Abstract: This application discloses alight-emitting diode device, comprising an epitaxial structure having a light-emitting layer, a first-type conductivity layer, and a second-type conductivity layer wherein the thicknesses of the first-type conductivity confining layer is not equal to the second-type conductivity confining layer and the light-emitting layer is not overlapped with the portion of the epitaxial structure corresponding to the peak zone of the wave intensity distribution curve along the direction of the epitaxy growth.

Abstract: A light-emitting device is disclosed. The light-emitting device comprises an epitaxial structure comprising a lower cladding layer of first conductivity type, an active layer comprising InGaN or AlGaInN on the lower cladding layer, and an upper cladding layer of second conductivity type on the active layer; a tunneling structure on the epitaxial structure comprising a first tunneling layer of second conductivity type with a doping concentration greater than 6×1019/cm3 on the upper cladding layer, and a second tunneling layer of first conductivity type with a doping concentration greater than 6×1019/cm3 on the first tunneling layer; and a current spreading layer of first conductivity type comprising AlInN on the tunneling structure.

Abstract: A light-emitting device with a tunneling structure and a current spreading layer is disclosed. It includes an electrically conductive permanent substrate, an adhesive layer, an epitaxial structure, a tunneling structure and a current spreading layer. The adhesive layer is on the electrically conductive permanent substrate. The epitaxial structure on the adhesive layer at least comprises an upper cladding layer, an active layer, and a lower cladding layer. The tunneling structure on the epitaxial structure comprises a first conductivity type semiconductor layer with a first doping concentration and a second conductivity type semiconductor layer with a second doping concentration. The current spreading layer is on the tunneling structure.

Abstract: A light-emitting device with a tunneling structure and a current spreading layer is disclosed. It includes an electrically conductive permanent substrate, an adhesive layer, an epitaxial structure, a tunneling structure and a current spreading layer. The adhesive layer is on the electrically conductive permanent substrate. The epitaxial structure on the adhesive layer at least comprises an upper cladding layer, an active layer, and a lower cladding layer. The tunneling structure on the epitaxial structure comprises a first conductivity type semiconductor layer with a first doping concentration and a second conductivity type semiconductor layer with a second doping concentration. The current spreading layer is on the tunneling structure.

Abstract: This application discloses alight-emitting diode device, comprising an epitaxial structure having a light-emitting layer, a first-type conductivity layer, and a second-type conductivity layer wherein the thicknesses of the first-type conductivity confining layer is not equal to the second-type conductivity confining layer and the light-emitting layer is not overlapped with the portion of the epitaxial structure corresponding to the peak zone of the wave intensity distribution curve along the direction of the epitaxy growth.