Abstract: A preparation method and an application for an oil-in-water nanoemulsion material are provided, the method is a new method combining sonication-phase inversion composition-phase inversion temperature, S-PIC-T method, i.e., the combined application of the sonication, the phase inversion composition method and the phase inversion temperature develops a new type nano-preparation with small droplet size, high loading hydrophobic small molecule substances, and stable physical and chemical properties. Therefore, in the present disclosure, the sonication in the high-energy method is combined with PIC and PIT in the low-energy method, because the sonication does not produce high heat, the amount of surfactant is reduced, and the size of emulsion droplets is reduced while the energy consumption is low, while PIC and PIT reduce production costs and protect the biological activity of hydrophobic bioactive substances.

Abstract: A processing method includes obtaining a first screen resolution of a first electronic device and a second screen resolution of a second electronic device, the first electronic device being a sender of shared data, and second electronic device being a recipient of the shared data; determining a first display attribute of a display object in display content displayed by the first electronic device, the first display attribute being at least used to characterize display size displayed by the display object; determining a target display parameter based on the first screen resolution, the second screen resolution, and the first display attribute, the target display parameter being a display parameter needed for the second electronic device to display the display object with the target display attribute; adjusting display effect of the display content based on the target display parameter; and sending the display content after adjusting the display effect to the second electronic device as the shared data.

Abstract: A processing method includes obtaining a to-be-shared file and its identification information, the identification information indicating a target object in the to-be-shared file; and in response to obtaining a sharing operation that satisfies a condition, sharing the to-be-shared file from a sending terminal to a receiving terminal to cause the receiving terminal to output at least the target object obtained by processing the to-be-shared file.

Abstract: A processing method includes obtaining a first screen resolution of a first electronic device and a second screen resolution of a second electronic device, the first electronic device being a sender of shared data, and second electronic device being a recipient of the shared data; determining a first display attribute of a display object in display content displayed by the first electronic device, the first display attribute being at least used to characterize display size displayed by the display object; determining a target display parameter based on the first screen resolution, the second screen resolution, and the first display attribute, the target display parameter being a display parameter needed for the second electronic device to display the display object with the target display attribute; adjusting display effect of the display content based on the target display parameter; and sending the display content after adjusting the display effect to the second electronic device as the shared data.

Abstract: Disclosed is a high strength, high-temperature corrosion resistant martensitic stainless steel characterized by comprising the following chemical elements in percentages by mass: 0<C?0.05%, 0.1-0.2% of Si, 0.20-1.0% of Mn, 11.0-14.0% of Cr, 4.0-6.0% of Ni, 1.5-2.5% of Mo, 0.001%-0.10% of N, 0.03-0.2% of V, 0.01-0.1% of Nb, 0.01-0.04% of Al, and the balance being Fe and inevitable impurities. In addition, also disclosed are tubing and casing manufactured from the above-mentioned high strength, high-temperature corrosion resistant martensitic stainless steel, and a method for manufacturing the tubing and the casing. The high strength, high-temperature corrosion resistant martensitic stainless steel of the present disclosure has an excellent high temperature corrosion resistance to carbon dioxide and chloride ions, as well as excellent low-temperature impact toughness and a high-temperature strength degradation resistance.

Abstract: Embodiments of the present disclosure provide an information processing method and apparatus. The information processing method includes if a first interface includes at least one input area, responding to a first instruction to call up a target input information corresponding to a target input area at the at least one input area, where the target input information is one piece of the at least one information in a second interface. The information processing method further includes responding to a second instruction at the second interface and outputting the target input information in the target input area. Wherein, the first interface is different from the second interface, thereby improving the input efficiency of information.

Abstract: A control method, an electronic device, and a storage medium are provided. The method includes: obtaining a first screen projection instruction and determining a target display device to be projected; and switching a network to which an electronic device or the target display device is connected when the target display device and the electronic device executing the first screen projection instruction are not connected to a same network, such that output content of the electronic device is able to be display-outputted to the target display device.

Abstract: A processing method includes obtaining a to-be-shared file and its identification information, the identification information indicating a target object in the to-be-shared file; and in response to obtaining a sharing operation that satisfies a condition, sharing the to-be-shared file from a sending terminal to a receiving terminal to cause the receiving terminal to output at least the target object obtained by processing the to-be-shared file.

Abstract: The present invention generally relates to methods and process agents for bitumen extraction from ore. More specifically, the method comprises contacting a process agent to the ore and adding water to form a bitumen-containing slurry. The process agent comprises sodium silicate, an aluminate, a dodecyl sulfate, or a combination thereof.

Abstract: The present invention generally relates to methods for decreasing viscosity, yield stress, or viscosity and yield stress of an asphaltene precipitate-containing aqueous mixture. More specifically, the method comprises applying an effective amount of a water-soluble polymer to an asphaltene precipitate-containing aqueous mixture. The water-soluble polymers comprise polyanion, polycation, and polar water-soluble polymer components. The present invention also relates to water-soluble asphaltene dispersants.

Abstract: The present invention generally relates to methods and process agents for bitumen extraction from ore. More specifically, the method comprises contacting a process agent to the ore and adding water to form a bitumen-containing slurry. The process agent comprises sodium silicate, an aluminate, a dodecyl sulfate, or a combination thereof.

Abstract: The present invention generally relates to methods for decreasing viscosity, yield stress, or viscosity and yield stress of an asphaltene precipitate-containing aqueous mixture. More specifically, the method comprises applying an effective amount of a water-soluble polymer to an asphaltene precipitate-containing aqueous mixture. The water-soluble polymers comprise polyanion, polycation, and polar water-soluble polymer components. The present invention also relates to water-soluble asphaltene dispersants.

Abstract: Methods for controlling the length of a replacement metal gate to a designed target gate length and the resulting device are disclosed. Embodiments may include removing a dummy gate from above a substrate forming a cavity, wherein side surfaces of the cavity are lined with an oxidized spacer layer and a bottom surface of the cavity is lined with a gate oxide layer, conformally forming a sacrificial oxide layer over the substrate and the cavity, and removing the sacrificial oxide layer from the bottom surface of the cavity and the substrate leaving sacrificial oxide spacers lining the side surfaces of the cavity.

Abstract: Integrated circuits and methods of forming integrated circuits are provided herein. In an embodiment, a method of forming an integrated circuit includes providing a base substrate having an embedded electrical contact disposed therein. An interlayer dielectric is formed overlying the base substrate, and a recess is etched through the interlayer dielectric over the embedded electrical contact. A protecting liner is formed in the recess and over an exposed surface of the embedded electrical contact in the recess. The protecting liner includes at least two liner layers that have materially different etch rates in different etchants. A portion of the protecting liner is removed over the surface of the embedded electrical contact to again expose the surface of the embedded electrical contact in the recess. An embedded electrical interconnect is formed in the recess. The embedded electrical interconnect overlies the protecting liner on sides of the recess.

Abstract: Methods for controlling the length of a replacement metal gate to a designed target gate length and the resulting device are disclosed. Embodiments may include removing a dummy gate from above a substrate forming a cavity, wherein side surfaces of the cavity are lined with an oxidized spacer layer and a bottom surface of the cavity is lined with a gate oxide layer, conformally forming a sacrificial oxide layer over the substrate and the cavity, and removing the sacrificial oxide layer from the bottom surface of the cavity and the substrate leaving sacrificial oxide spacers lining the side surfaces of the cavity.

Abstract: Integrated circuits and methods of forming integrated circuits are provided herein. In an embodiment, a method of forming an integrated circuit includes providing a base substrate having an embedded electrical contact disposed therein. An interlayer dielectric is formed overlying the base substrate, and a recess is etched through the interlayer dielectric over the embedded electrical contact. A protecting liner is formed in the recess and over an exposed surface of the embedded electrical contact in the recess. The protecting liner includes at least two liner layers that have materially different etch rates in different etchants. A portion of the protecting liner is removed over the surface of the embedded electrical contact to again expose the surface of the embedded electrical contact in the recess. An embedded electrical interconnect is formed in the recess. The embedded electrical interconnect overlies the protecting liner on sides of the recess.

Abstract: A conductive metal structure applied to a module IC includes a wafer, a first insulating unit, and a first conductive unit. The wafer has a main body and a through hole passing through the main body. The first insulating unit has a first inner insulating layer formed on an inner surface of the through hole and a first outer insulating layer that is extended from the first inner insulating layer and is formed on a first bottom surface of the main body. The first conductive unit has a first inner conductive layer formed on the first inner insulating layer and at least one first conductive pad formed on the first outer insulating layer. The present invention integrates semiconductor technologies of etching and deposition and combines them with the development of the module IC in order to provide a conductive metal structure that has lower cost and is manufactured easily.

Abstract: A method of manufacturing an integrated circuit provides a substrate having a semiconductor device, and includes forming an intermetal dielectric layer over the substrate and the semiconductor device. A metal wire is formed above the semiconductor device and in contact therewith and a passivation layer is formed over the intermetal dielectric layer. A bond pad is formed connected to the metal wire. A protective moat, with sidewall passivation layer, is formed through the passivation layer and the intermetal dielectric layer, and is located between the metal wire and an outside edge of the integrated circuit.

Abstract: A method of manufacturing an integrated circuit provides a substrate having a semiconductor device, and includes forming an intermetal dielectric layer over the substrate and the semiconductor device. A metal wire is formed above the semiconductor device and in contact therewith and a passivation layer is formed over the intermetal dielectric layer. A bond pad is formed connected to the metal wire. A protective moat, with sidewall passivation layer, is formed through the passivation layer and the intermetal dielectric layer, and is located between the metal wire and an outside edge of the integrated circuit.