Patents by Inventor Meng Shien Hsieh

Meng Shien Hsieh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • INTERCONNECT AND METHOD OF FABRICATING THE SAME
    Publication number: 20150194382
    Abstract: Provided is a method of fabricating an interconnect including the following steps. A conductive plug and a dielectric layer are provided, wherein a surface of the conductive plug and the surface of the dielectric layer substantially form a planar surface. A chemical mechanical polishing process is performed to the planar surface, wherein a chemical removal rate of the dielectric layer is greater than a chemical removal rate of the conductive plug. A conductive line is formed to electrically connect the conductive plug.
    Type: Application
    Filed: January 3, 2014
    Publication date: July 9, 2015
    Applicant: MACRONIX International Co., Ltd.
    Inventors: Cheng-Fen Lai, Meng-Shien Hsieh, Shiau-Lian Liu
  • TENSILE POLYCRYSTALLINE SILICON FILM HAVING STABLE RESISTIVITY AND METHOD OF FABRICATING THEREOF
    Publication number: 20140225115
    Abstract: Tensile polycrystalline silicon films having improved resistivity and less variability or more stable resistivity in finished semiconductors are provided. The methods of manufacturing such polycrystalline silicon films include application of protective film or film layer prior to annealing the semiconductor. Such devices and methods lead to improved stress control and resistivity.
    Type: Application
    Filed: February 11, 2013
    Publication date: August 14, 2014
    Applicant: MACRONIX INTERNATIONAL CO., LTD.
    Inventors: Kuang-Hui Tai, Hung-Yu Lin, Meng Shien Hsieh, Teng-Chen Chiu, Keng Hui Su
  • SEMICONDUCTOR DEVICE FOR CURRENT CONTROL AND METHOD THEREOF
    Publication number: 20140175526
    Abstract: A semiconductor device where at least one of a portion of the first metal layer that extends from the source contact, a portion of the second metal layer that extends from the source contact, a portion of the first metal layer that extends from the drain contact, and a portion of the second metal layer that extends from the drain contact is configured to lie above a portion of or even all of the gate. Methods of fabricating and using such a semiconductor device are also provided.
    Type: Application
    Filed: December 20, 2012
    Publication date: June 26, 2014
    Applicant: MACRONIX INTERNATIONAL CO., LTD.
    Inventors: Kuo Hung Hsieh, Meng Shien Hsieh, Yin Fu Huang, Miao Chun Chung