Abstract: A method for forming lining oxide in an opening for a shallow trench isolation and a method for forming a shallow trench isolation incorporating a lining oxide layer are described. In the method for forming lining oxide, a silicon substrate is first provided, followed by a process of forming a pad oxide layer and a silicon nitride mask sequentially on top of the silicon substrate. A trench opening is then patterned and formed in the silicon substrate for the shallow trench isolation. The silicon substrate is then annealed at a temperature of at least 1,000° C. in a furnace in an environment that contains not more than 10 vol. % oxygen. A lining oxide layer is formed in the same furnace used for annealing the structure of the trench opening in the silicon substrate.

Abstract: An anti-reflective coating and method of forming the anti-reflective coating are described wherein the anti-reflective coating is part of a silicon nitride layer formed on a semiconductor integrated circuit substrate. The anti-reflective coating is formed under the photoresist layer for greater effectiveness but does not disrupt the process flow since the anti-reflective coating is part of the silicon nitride layer. A first silicon nitride layer is formed having an index of refraction of about 2.1. A second silicon nitride layer having an index of refraction of about 1.9 and a second thickness is formed on the first silicon nitride layer. A layer of photoresist is then formed on the second silicon nitride layer. The second thickness is chosen to be equal to the wavelength of the light used to expose the layer of photoresist divided by the quantity of 4 multiplied by 1.9. The second silicon nitride layer acts as an effective anti-reflective layer.

Abstract: An anti-reflective coating and method of forming the anti-reflective coating are described wherein the anti-reflective coating is part of a silicon nitride layer formed on a semiconductor integrated circuit substrate. The anti-reflective coating is formed under the photoresist layer for greater effectiveness but does not disrupt the process flow since the anti-reflective coating is part of the silicon nitride layer. A first silicon nitride layer is formed having an index of refraction of about 2.1. A second silicon nitride layer having an index of refraction of about 1.9 and a second thickness is formed on the first silicon nitride layer. A layer of photoresist is then formed on the second silicon nitride layer. The second thickness is chosen to be equal to the wavelength of the light used to expose the layer of photoresist divided by the quantity of 4 multiplied by 1.9. The second silicon nitride layer acts as an effective anti-reflective layer.