Abstract: Systems, devices, and methods for fabricating staircase structures in three-dimensional (3D) semiconductor devices are provided. In one aspect, a method includes providing a first deck comprising a first stack of first sacrificial layers and first isolating layers extending along a first direction. At least a part of the first deck is etched to form a first staircase structure. A second deck adjacent to the first deck along a second direction is provided, the second deck comprising a second stack of second sacrificial layers and second isolating layers extending along the first direction, the second sacrificial layers and the second isolating layers alternating with each other along the second direction. At least a part of the second deck is etched to form a second staircase structure. Contact structures extending through at least one of the first staircase structure or the second staircase structure along the second direction are formed.

Abstract: Three-dimensional (3D) memory devices and fabricating methods thereof are disclosed. The disclosed semiconductor device can comprise a stack structure comprising alternative conductive layers and dielectric layers, and a gate line structure extending vertically through the stack structure and laterally along a first lateral direction to divide the stack structure into memory fingers. The gate line structure can comprise gate line slit structure segments aligned along the first lateral direction, and at least one first dummy contact structure located between adjacent gate line slit structure segments in the first lateral direction.

Abstract: Three-dimensional (3D) memory devices and fabricating methods thereof are disclosed. A disclosed semiconductor device comprises a stack structure comprising alternative conductive layers and dielectric layers, and a gate line structure extending vertically through the stack structure and laterally along a first lateral direction to divide the stack structure into memory blocks. The gate line structure comprises gate line slit structure segments aligned along the first lateral direction, and at least one dummy channel structure located between the gate line slit structure segments in the first lateral direction.

Abstract: Three-dimensional (3D) memory devices and fabricating methods thereof are disclosed. One disclosed semiconductor device comprises a stack structure comprising an array region and a contact region, and a gate line slit structure extending vertically through the stack structure and laterally along a first lateral direction to divide the stack structure into memory blocks. The gate line slit structure comprises a first dummy channel structure located at a boundary between the array region and the contact region, a first gate line slit segment extending laterally from the first dummy channel structure into the array region, and a second gate line slit segment extending laterally from the first dummy channel structure into the contact region.

Abstract: Implementations of three-dimensional (3D) memory devices and fabricating methods thereof are disclosed. In some implementations, the disclosed 3D memory device comprises: a stack structure including a plurality of dielectric layers and conductive layers alternatively stacked in a vertical direction; an array of channel structures each vertically penetrating the stack structure, each channel structure including a functional layer and a channel layer; and a plurality of isolation structures extending in parallel along a first lateral direction and vertically in an upper portion of the stack structure, each isolation structure being in contact with the channel layers of two adjacent rows of channel structures.

Abstract: A semiconductor device includes a stack comprising interleaved conductive layers and dielectric layers stacked along a first direction, and a contact structure extending through the stack along the first direction. The conductive layers include a first conductive layer and a second conductive layer under the first conductive layer, and the first conductive layer is in contact with the contact structure. The first conductive layer includes a first portion having a first thickness and a second portion having a second thickness less than the first thickness in contact with the contact structure.

Abstract: The present invention provides a method for preparing battery-grade anhydrous iron phosphate from liquid crude monoammonium phosphate, and belongs to the technical field of chemical industry production. In the present invention, ferrous sulfate solution and liquid crude monoammonium phosphate are used as raw materials, and ferrous iron is oxidized to ferric iron and separates out iron phosphate precipitate under the action of an oxidizing agent to obtain iron phosphate intermediate slurry; and then battery-grade anhydrous iron phosphate is finally obtained through solid-liquid separation, washing, aging, solid-liquid separation, washing, drying, dehydration and breaking up. The method provided by the present invention realizes the resource utilization of liquid crude monoammonium phosphate, has simple process and convenient operation and produces less waste water.

Abstract: Aspects of the disclosure provide a method for fabricating a semiconductor device having an first stack of alternating insulating layers and sacrificial word line layers arranged over a substrate, the first stack including a core region and a staircase region. The method can include forming a first dielectric trench in the core region of the first stack, forming a second dielectric trench that is adjacent to and connected with the first dielectric trench in the staircase region of the first stack, and forming dummy channel structures extending through the first stack where the dummy channel structures are spaced apart from the second dielectric trench.

Abstract: An isotropic imaging filter is provided that includes a photonic crystal slab, where the photonic crystal slab includes a square lattice of air through holes, a dielectric constant, a thickness (d), a through hole radius (r), and a lattice constant (a), where the square lattice of air holes are separated according to a value of the lattice constant, where the thickness is configured according to d=M(a), where the through hole radii is configured according to r=N(a), where the thickness and the hole radii are configured to generate isotropic bands of guided resonances of an incident image.

Abstract: Aspects of the disclosure provide a method for fabricating a semiconductor device having an first stack of alternating insulating layers and sacrificial word line layers arranged over a substrate, the first stack including a core region and a staircase region. The method can include forming a first dielectric trench in the core region of the first stack, forming a second dielectric trench that is adjacent to and connected with the first dielectric trench in the staircase region of the first stack, and forming dummy channel structures extending through the first stack where the dummy channel structures are spaced apart from the second dielectric trench.

Abstract: Techniques for generating a dataset from a knowledge graph are described. An exemplary method includes receiving a request to generate a dataset from a knowledge graph to be stored in the storage; generating a dataset comprising a plurality of mention-concept pairs from the knowledge graph according to the request based one or more of a synonym-based and graph-based evaluation of the knowledge graph and a custom ontology for the knowledge graph; and storing the generated dataset in the storage.

Abstract: Embodiments of three-dimensional (3D) memory devices and methods for forming the same are disclosed. In an example, a 3D memory device includes a substrate, a memory stack on the substrate, a plurality of channel structures each extending vertically through the memory stack, and one or more isolation structures. The memory stack includes a plurality of interleaved conductive layers and dielectric layers. An outmost one of the conductive layers toward the substrate is a source select gate line (SSG). Each isolation structure surrounds at least one of the channel structures in a plan view to separate the SSG and the at least one channel structure.

Abstract: Systems and methods are described for merging customer profiles, such as may be implemented by a computer-implemented contact center service. In some aspects, a subset of profiles may be determined that satisfy merging criteria, where individual profiles include a plurality of data fields. At least one value in a first data field that conflicts between at least two profiles may be identified. Next a merged value may be selected for the first data field based on data deduplication criteria, where the data deduplication criteria includes at least one indicator of accuracy of values of the plurality of data fields. As a result of a determination that at least the subset of profiles of the group of profiles meet the merging criteria, at least the subset of profiles may be combined into a combined profile using the merged value.

Abstract: The present invention provides a method for preparing battery-grade anhydrous iron phosphate from liquid crude monoammonium phosphate, and belongs to the technical field of chemical industry production. In the present invention, ferrous sulfate solution and liquid crude monoammonium phosphate are used as raw materials, and ferrous iron is oxidized to ferric iron and separates out iron phosphate precipitate under the action of an oxidizing agent to obtain iron phosphate intermediate slurry; and then battery-grade anhydrous iron phosphate is finally obtained through solid-liquid separation, washing, aging, solid-liquid separation, washing, drying, dehydration and breaking up. The method provided by the present invention realizes the resource utilization of liquid crude monoammonium phosphate, has simple process and convenient operation and produces less waste water.

Abstract: Provided is a method for preparing an adenovirus vector vaccine by means of a perfusion culture process. The method comprises a step of culturing adenovirus host cells, and in particular a step of adjusting the perfusion rate by means of at least two stages according to cell density. The method increases the single cell yield of a virus after infection and the specific activity of a virus harvest liquid while achieving high-density growth of adenovirus host cells.

Abstract: Aspects of the disclosure provide a method for fabricating a semiconductor device having an first stack of alternating insulating layers and sacrificial word line layers arranged over a substrate, the first stack including a core region and a staircase region. The method can include forming a first dielectric trench in the core region of the first stack, forming a second dielectric trench that is adjacent to and connected with the first dielectric trench in the staircase region of the first stack, and forming dummy channel structures extending through the first stack where the dummy channel structures are spaced apart from the second dielectric trench.

Abstract: Embodiments of three-dimensional (3D) memory devices and methods for forming the same are disclosed. In an example, a 3D memory device includes a substrate, a memory stack on the substrate, a plurality of channel structures each extending vertically through the memory stack, and one or more isolation structures. The memory stack includes a plurality of interleaved conductive layers and dielectric layers. An outmost one of the conductive layers toward the substrate is a source select gate line (SSG). Each isolation structure surrounds at least one of the channel structures in a plan view to separate the SSG and the at least one channel structure.

Abstract: A variation testing system environment for performing variation testing of web pages and applications is disclosed. Users requesting a view from a content provider are not randomly assigned to one of a plurality of variations of the view. Rather, a function is applied to each user's identifier in order to determine which variation of the view is provided to a client device of the user.

Abstract: An isotropic imaging filter is provided that includes a photonic crystal slab, where the photonic crystal slab includes a square lattice of air through holes, a dielectric constant, a thickness (d), a through hole radius (r), and a lattice constant (a), where the square lattice of air holes are separated according to a value of the lattice constant, where the thickness is configured according to d=M(a), where the through hole radii is configured according to r=N(a), where the thickness and the hole radii are configured to generate isotropic bands of guided resonances of an incident image.

Abstract: An isotropic imaging filter is provided that includes a photonic crystal slab, where the photonic crystal slab includes a square lattice of air through holes, a dielectric constant, a thickness (d), a through hole radius (r), and a lattice constant (a), where the square lattice of air holes are separated according to a value of the lattice constant, where the thickness is configured according to d=M(a), where the through hole radii is configured according to r=N(a), where the thickness and the hole radii are configured to generate isotropic bands of guided resonances of an incident image.