Abstract: A floating point pre-alignment structure for computing-in-memory applications includes a time domain exponent computing block and an input mantissa pre-align block. The time domain exponent computing block is configured to compute a plurality of original input exponents and a plurality of original weight exponents to generate a plurality of flags. Each of the flags is determined by adding one of the original input exponents and one of the original weight exponents. The input mantissa pre-align block is configured to receive a plurality of original input mantissas and shift the original input mantissas according to the flags to generate a plurality of weighted input mantissas, and sparsity of the weighted input mantissas is greater than sparsity of the original input mantissas. Each of the flags has a negative correlation with a sum of the one of the original input exponents and the one of the original weight exponents.

Abstract: An epitaxial structure of a semiconductor light-emitting element includes an n-type layer, a V-pit control layer, a light-emitting layer, and a p-type layer stacked from bottom to top. The light-emitting layer includes a plurality of well layers and a plurality of barrier layers stacked alternately. The V-pit control layer includes a first superlattice layer, and a distance between a bottom surface of the V-pit control layer and a bottom surface of the first superlattice layer is less than or equal to 0.15 ?m. The bottom surface of the first superlattice layer and a bottom surface of the light-emitting layer have a distance therebetween ranging from 0.05 ?m to 0.3 ?m, and each of the first superlattice layer and the light-emitting layer is an Indium (In)-containing layer. A semiconductor light-emitting element and a light-emitting device are also provided.

Abstract: A semiconductor device and a method of forming the same are provided. The semiconductor device includes a substrate, a gate structure, a dielectric structure and a contact structure. The substrate has source/drain (S/D) regions. The gate structure is on the substrate and between the S/D regions. The dielectric structure covers the gate structure. The contact structure penetrates through the dielectric structure to connect to the S/D region. A lower portion of a sidewall of the contact structure is spaced apart from the dielectric structure by an air gap therebetween, while an upper portion of the sidewall of the contact structure is in contact with the dielectric structure.

Abstract: A peritoneal dialysis system includes a cycler including a pump actuator, a heater and a heating pan operable with the heater, and a disposable set operable with the cycler. The heating pan includes a sidewall forming a slot. The disposable set includes a pumping cassette and a heater/mixing container. The pumping cassette includes a pump chamber configured to be actuated by the pump actuator. Additionally, the heater/mixing container is in fluid communication with the pumping cassette and is sized to be received at the heating pan. The heater/mixing container includes a port configured such that when the port is slid into the slot of the heater pan sidewall, the port is prevented from rotating about an axis transverse to a direction of flow through the port.

Abstract: A device includes: a complementary transistor including: a first transistor having a first source/drain region and a second source/drain region; and a second transistor stacked on the first transistor, and having a third source/drain region and a fourth source/drain region, the third source/drain region overlapping the first source/drain region, the fourth source/drain region overlapping the second source/drain region. The device further includes: a first source/drain contact electrically coupled to the third source/drain region; a second source/drain contact electrically coupled to the second source/drain region; a gate isolation structure adjacent the first and second transistors; and an interconnect structure electrically coupled to the first source/drain contact and the second source/drain contact.

Abstract: A semiconductor device is provided, which includes a first semiconductor structure, a second semiconductor structure and a light-emitting structure. The first semiconductor structure includes a first confinement layer and a first cladding layer adjacent to the first confinement layer. The second semiconductor structure is located on the first semiconductor structure and includes a second confinement layer. The light-emitting structure is located between the first semiconductor structure and the second semiconductor structure. The light-emitting structure includes a first multiple quantum well structure containing a plurality of semiconductor stacks. Each of the semiconductor stacks is stacked by a well layer and a barrier layer. The first confinement layer and the second confinement layer are adjacent to the light emitting structure. The well layer and the barrier layer in each of the semiconductor stacks include the same quaternary semiconductor material including InGaAsP, AlGaInAs or InGaNAs.

Abstract: A semiconductor device is provided, which includes a first semiconductor structure, a second semiconductor structure and a light-emitting structure. The light-emitting structure is located between the first semiconductor structure and the second semiconductor structure. The light-emitting structure includes a first multiple quantum well structure containing aluminum and a plurality of semiconductor stacks. Each of the semiconductor stacks is stacked by a well layer and a barrier layer. The light-emitting structure emits an incoherent light. The well layer and the barrier layer in each of the semiconductor stacks include the same quaternary semiconductor material which includes indium (In). The well layer has a first In content percentage larger than 0.53, and the barrier layer has a second In content percentage less than 0.53.

Abstract: A semiconductor device is provided, which includes an active structure, a first semiconductor layer, a second semiconductor layer, an intermediate layer, a transition layer and a contact layer. The active structure has two sides and includes an active region. The first semiconductor layer and the second semiconductor layer respectively located on the two sides of the active structure. The intermediate layer is located between the second semiconductor layer and the active structure. The transition layer is located on the second semiconductor layer. The contact layer is located on the transition layer.

Abstract: A semiconductor device is provided, which includes an active structure and a first semiconductor layer. The active structure includes an active region having a topmost surface and a bottommost surface, and a first dopant distributing from the topmost surface to the bottommost surface. The first semiconductor layer is located under the active structure and includes a second dopant. The active region includes a semiconductor material including As.

Abstract: A semiconductor device is provided, which includes a first semiconductor structure, a second semiconductor structure and a light-emitting structure. The light-emitting structure is located between the first semiconductor structure and the second semiconductor structure. The light-emitting structure includes a first multiple quantum well structure containing aluminum and a plurality of semiconductor stacks. Each of the semiconductor stacks is stacked by a well layer and a barrier layer. The light-emitting structure emits an incoherent light. The well layer and the barrier layer in each of the semiconductor stacks include the same quaternary semiconductor material which includes indium (In). The well layer has a first In content percentage larger than 0.53, and the barrier layer has a second In content percentage less than 0.53.

Abstract: A semiconductor device is provided, which includes a first semiconductor structure, a second semiconductor structure and a light-emitting structure. The light-emitting structure is located between the first semiconductor structure and the second semiconductor structure. The light-emitting structure includes a multiple quantum well structure. The multiple quantum well structure contains aluminum and includes a plurality of semiconductor stacks. Each of the semiconductor stacks is stacked by a well layer and a barrier layer. In each semiconductor stack, the well layer has a thickness larger than a thickness of the barrier layer.

Abstract: A method of making a semiconductor device includes: providing a substrate; forming an insulating layer on the substrate; forming a first trench in the insulating layer; forming a first semiconductor layer in the first trench; and removing a portion of the insulating layer to expose the first semiconductor layer.

Abstract: A semiconductor device is provided, which includes an active structure and a first semiconductor layer. The active structure includes an active region having a topmost surface and a bottommost surface, and a first dopant distributing from the topmost surface to the bottommost surface. The first semiconductor layer is located under the active structure and includes a second dopant. The active region includes a semiconductor material including As.

Abstract: A semiconductor device is provided, which includes an active structure and a first semiconductor layer. The active structure includes an active region having a topmost surface and a bottommost surface, and a first dopant distributing from the topmost surface to the bottommost surface. The first semiconductor layer is located under the active structure and includes a second dopant. The active region includes a semiconductor material including As.

Abstract: A semiconductor device includes a first type semiconductor structure, an active structure, and a contact layer. The first type semiconductor structure includes a first lattice constant, a first side and a second side opposite to the first side. The active structure is on the first side of the first type semiconductor structure and emits a radiation, and the radiation has a peak wavelength between 1000 nm and 2000 nm. The contact layer is on the second side of the first type semiconductor structure and includes a second lattice constant. A difference between the first lattice constant and the second lattice constant is at least 0.5%.

Abstract: The present disclosure provides a semiconductor device which includes a base layer and a buffer structure. The base layer includes a first semiconductor compound having a first lattice constant and including a plurality of elements, and an atomic radius of one of the plurality of elements which has the largest atomic radius is defined as a first atomic radius. The buffer structure includes a second semiconductor compound and a first additive. The second semiconductor compound has a second lattice constant and the first additive has a second atomic radius. The second lattice constant is larger than the first lattice constant, and the second atomic radius is larger than the first atomic radius.

Abstract: A semiconductor substrate is provided in the present disclosure. The semiconductor substrate includes a first semiconductor layer and a second semiconductor layer on the first semiconductor layer. The first semiconductor layer has a first lattice constant (L1) and the second semiconductor layer has a second lattice constant (L2). A ratio of a difference (L2-L1) between the second lattice constant (L2) and the first lattice constant (L1) to the first lattice constant (L1) is greater than 0.036.

Abstract: A light-emitting device is provided, which includes a first semiconductor structure, an active structure, a second semiconductor structure, and a first blocking layer. The first semiconductor structure has a first conductivity type. The active structure is on the first semiconductor structure and has a first dopant. The second semiconductor structure is on the active structure and has a second conductivity type different from the first conductivity type. The first blocking layer is between the second semiconductor structure and the active structure. The first blocking layer has the first dopant with a first doping concentration decreasing along a depth direction from the second semiconductor structure to the first semiconductor structure.

Abstract: A peritoneal dialysis system includes a cycler including a pump actuator, a heater and a heating pan operable with the heater, and a disposable set operable with the cycler. The heating pan includes a sidewall forming a slot. The disposable set includes a pumping cassette and a heater/mixing container. The pumping cassette includes a pump chamber configured to be actuated by the pump actuator. Additionally, the heater/mixing container is in fluid communication with the pumping cassette and is sized to be received at the heating pan. The heater/mixing container includes a port configured such that when the port is slid into the slot of the heater pan sidewall, the port is prevented from rotating about an axis transverse to a direction of flow through the port.

Abstract: A semiconductor device is provided, which includes a base, a semiconductor structure and a conductive reflective structure. The base has a first surface and a second surface opposite to the first surface. The semiconductor structure is located on the first surface. The conductive reflective structure is located on the second surface and includes a metal oxide structure and a metal structure. The metal oxide structure is located between the metal structure and the base. The metal oxide structure physically contacts the second surface.