Abstract: A semiconductor device is provided, which includes an active structure, a first semiconductor layer, a second semiconductor layer, an insulating layer, and a conductive layer. The active region has two sides and includes an active region. The first semiconductor layer and the second semiconductor layer respectively located on the two sides of the active structure. The insulating layer covers a portion of the first semiconductor layer. The conductive layer covers the insulating layer and physically contacts the first semiconductor layer. The second semiconductor layer includes a first dopant and the first semiconductor layer includes a second dopant different from the first dopant. The first semiconductor layer includes a quaternary III-V semiconductor material, and the active region includes a quaternary semiconductor material, and the semiconductor device emits a radiation having a peak wavelength between 800 nm and 2000 nm.

Abstract: A semiconductor device is provided, which includes an active structure, a first semiconductor layer, a second semiconductor layer, an intermediate layer, a transition layer and a contact layer. The active structure has two sides and includes an active region. The first semiconductor layer and the second semiconductor layer respectively located on the two sides of the active structure. The intermediate layer is located between the second semiconductor layer and the active structure. The transition layer is located on the second semiconductor layer. The contact layer is located on the transition layer.

Abstract: The present disclosure provides a semiconductor device including a first semiconductor layer, a light-emitting structure, and a second semiconductor layer. The first semiconductor layer includes a first III-V semiconductor material. The light-emitting structure is on the first semiconductor layer and includes an active structure. The second semiconductor layer is under the first semiconductor layer and includes a second III-V semiconductor material. The third semiconductor layer is between the first semiconductor layer and the light-emitting structure and includes a third III-V semiconductor material. The first semiconductor layer, the second semiconductor layer and the third semiconductor layer includes a first dopant and a third dopant. A concentration of the first dopant in the first semiconductor layer is greater than a concentration of the first dopant in the second semiconductor layer.

Abstract: The present disclosure provides a semiconductor stack, a semiconductor device and a method for manufacturing the same. The semiconductor device includes a first semiconductor layer and a light-emitting structure. The first semiconductor layer includes a first III-V semiconductor material, a first dopant, and a second dopant. The light-emitting structure is on the first semiconductor layer and includes an active structure. In the first semiconductor layer, a concentration of the second dopant is higher than a concentration of the first dopant. The first dopant is carbon, and the second dopant is hydrogen.

Abstract: A peritoneal dialysis system includes a cycler comprising a control unit and a pump actuator. The peritoneal dialysis system also includes a disposable set operable with the cycler and in fluid communication with a source of water made suitable for peritoneal dialysis (“WFPD”) and a source of concentrate. The disposable set includes a pumping cassette comprising a pump chamber configured to be actuated by the pump actuator and a mixing container. The control unit is programmed to cause (i) the pump actuator to operate the pump chamber to pump a first amount of the WFPD to the mixing container, (ii) the pump actuator to operate the pump chamber to pump a prescribed amount of concentrate from the concentrate source to the mixing container, and (iii) the pump actuator to operate the pump chamber to pump a second amount of the WFPD to the mixing container.

Abstract: A peritoneal dialysis system includes a cycler including a pump actuator, a heater and a heating pan operable with the heater, and a disposable set operable with the cycler. The heating pan includes a sidewall forming a slot. The disposable set includes a pumping cassette and a heater/mixing container. The pumping cassette includes a pump chamber configured to be actuated by the pump actuator. Additionally, the heater/mixing container is in fluid communication with the pumping cassette and is sized to be received at the heating pan. The heater/mixing container includes a port configured such that when the port is slid into the slot of the heater pan sidewall, the port is prevented from rotating about an axis transverse to a direction of flow through the port.

Abstract: A semiconductor device is provided, which includes a first semiconductor structure, a second semiconductor structure and a light-emitting structure. The first semiconductor structure includes a first confinement layer and a first cladding layer adjacent to the first confinement layer. The second semiconductor structure is located on the first semiconductor structure and includes a second confinement layer. The light-emitting structure is located between the first semiconductor structure and the second semiconductor structure. The light-emitting structure includes a first multiple quantum well structure containing a plurality of semiconductor stacks. Each of the semiconductor stacks is stacked by a well layer and a barrier layer. The first confinement layer and the second confinement layer are adjacent to the light emitting structure. The well layer and the barrier layer in each of the semiconductor stacks include the same quaternary semiconductor material including InGaAsP, AlGaInAs or InGaNAs.

Abstract: A semiconductor device is provided, which includes a first semiconductor structure, a second semiconductor structure and a light-emitting structure. The light-emitting structure is located between the first semiconductor structure and the second semiconductor structure. The light-emitting structure includes a first multiple quantum well structure containing aluminum and a plurality of semiconductor stacks. Each of the semiconductor stacks is stacked by a well layer and a barrier layer. The light-emitting structure emits an incoherent light. The well layer and the barrier layer in each of the semiconductor stacks include the same quaternary semiconductor material which includes indium (In). The well layer has a first In content percentage larger than 0.53, and the barrier layer has a second In content percentage less than 0.53.

Abstract: A semiconductor device is provided, which includes an active structure, a first semiconductor layer, a second semiconductor layer, an intermediate layer, a transition layer and a contact layer. The active structure has two sides and includes an active region. The first semiconductor layer and the second semiconductor layer respectively located on the two sides of the active structure. The intermediate layer is located between the second semiconductor layer and the active structure. The transition layer is located on the second semiconductor layer. The contact layer is located on the transition layer.

Abstract: A semiconductor device is provided, which includes an active structure and a first semiconductor layer. The active structure includes an active region having a topmost surface and a bottommost surface, and a first dopant distributing from the topmost surface to the bottommost surface. The first semiconductor layer is located under the active structure and includes a second dopant. The active region includes a semiconductor material including As.

Abstract: A semiconductor device is provided, which includes a first semiconductor structure, a second semiconductor structure and a light-emitting structure. The light-emitting structure is located between the first semiconductor structure and the second semiconductor structure. The light-emitting structure includes a first multiple quantum well structure containing aluminum and a plurality of semiconductor stacks. Each of the semiconductor stacks is stacked by a well layer and a barrier layer. The light-emitting structure emits an incoherent light. The well layer and the barrier layer in each of the semiconductor stacks include the same quaternary semiconductor material which includes indium (In). The well layer has a first In content percentage larger than 0.53, and the barrier layer has a second In content percentage less than 0.53.

Abstract: A semiconductor device is provided, which includes a first semiconductor structure, a second semiconductor structure and a light-emitting structure. The light-emitting structure is located between the first semiconductor structure and the second semiconductor structure. The light-emitting structure includes a multiple quantum well structure. The multiple quantum well structure contains aluminum and includes a plurality of semiconductor stacks. Each of the semiconductor stacks is stacked by a well layer and a barrier layer. In each semiconductor stack, the well layer has a thickness larger than a thickness of the barrier layer.

Abstract: A method of making a semiconductor device includes: providing a substrate; forming an insulating layer on the substrate; forming a first trench in the insulating layer; forming a first semiconductor layer in the first trench; and removing a portion of the insulating layer to expose the first semiconductor layer.

Abstract: A semiconductor device is provided, which includes an active structure and a first semiconductor layer. The active structure includes an active region having a topmost surface and a bottommost surface, and a first dopant distributing from the topmost surface to the bottommost surface. The first semiconductor layer is located under the active structure and includes a second dopant. The active region includes a semiconductor material including As.

Abstract: A semiconductor device is provided, which includes an active structure and a first semiconductor layer. The active structure includes an active region having a topmost surface and a bottommost surface, and a first dopant distributing from the topmost surface to the bottommost surface. The first semiconductor layer is located under the active structure and includes a second dopant. The active region includes a semiconductor material including As.

Abstract: A semiconductor device includes a first type semiconductor structure, an active structure, and a contact layer. The first type semiconductor structure includes a first lattice constant, a first side and a second side opposite to the first side. The active structure is on the first side of the first type semiconductor structure and emits a radiation, and the radiation has a peak wavelength between 1000 nm and 2000 nm. The contact layer is on the second side of the first type semiconductor structure and includes a second lattice constant. A difference between the first lattice constant and the second lattice constant is at least 0.5%.

Abstract: The present disclosure provides a semiconductor device which includes a base layer and a buffer structure. The base layer includes a first semiconductor compound having a first lattice constant and including a plurality of elements, and an atomic radius of one of the plurality of elements which has the largest atomic radius is defined as a first atomic radius. The buffer structure includes a second semiconductor compound and a first additive. The second semiconductor compound has a second lattice constant and the first additive has a second atomic radius. The second lattice constant is larger than the first lattice constant, and the second atomic radius is larger than the first atomic radius.

Abstract: A semiconductor substrate is provided in the present disclosure. The semiconductor substrate includes a first semiconductor layer and a second semiconductor layer on the first semiconductor layer. The first semiconductor layer has a first lattice constant (L1) and the second semiconductor layer has a second lattice constant (L2). A ratio of a difference (L2-L1) between the second lattice constant (L2) and the first lattice constant (L1) to the first lattice constant (L1) is greater than 0.036.

Abstract: A light-emitting device is provided, which includes a first semiconductor structure, an active structure, a second semiconductor structure, and a first blocking layer. The first semiconductor structure has a first conductivity type. The active structure is on the first semiconductor structure and has a first dopant. The second semiconductor structure is on the active structure and has a second conductivity type different from the first conductivity type. The first blocking layer is between the second semiconductor structure and the active structure. The first blocking layer has the first dopant with a first doping concentration decreasing along a depth direction from the second semiconductor structure to the first semiconductor structure.