Patents by Inventor Meng-Yu Wu

Meng-Yu Wu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220244618
    Abstract: The present disclosure provides a base assembly of voice coil motor and a voice coil motor. The base assembly includes a base body having a first elastic piece connecting area, a lower elastic piece disposed on the first elastic piece connecting area, and a first terminal disposed in the base body. The first terminal has: a first conductive part disposed in the base body; a first terminal connecting part disposed on one side of the first conductive part and extending toward a direction away from the first conductive part, wherein a part of the first terminal connecting part protrudes from the first elastic piece connecting area and is connected with the lower elastic piece; and an engaging part disposed on one side of the first terminal connecting part and extending toward a direction away from the first terminal connecting part.
    Type: Application
    Filed: October 28, 2021
    Publication date: August 4, 2022
    Applicant: Lanto Electronic Limited
    Inventors: Wen-Yen HUANG, Fu-Yuan WU, Shang-Yu HSU, Meng-Ting LIN, BingBing MA, Jie DU, Yu-Cheng LIN
  • Publication number: 20220247299
    Abstract: The present disclosure provides a base assembly of voice coil motor and a voice coil motor. The base assembly includes a base body having an elastic piece connecting area with a protrusion; a lower elastic piece disposed on the elastic piece connecting area with a first connecting hole, a second connecting hole, and a first trench, the protrusion is exposed from the first connecting hole, and the first trench is disposed between the first connecting hole and the second connecting hole; a connecting piece; and a terminal having a conductive part and a terminal connecting part, wherein the conductive part is disposed in the base body, the terminal connecting part passes through the elastic piece connecting area and protrudes from the elastic piece connecting area, and a part of the terminal connecting part is exposed from the second connecting hole to be fixedly connected to the lower elastic piece.
    Type: Application
    Filed: October 28, 2021
    Publication date: August 4, 2022
    Applicant: Lanto Electronic Limited
    Inventors: Wen-Yen HUANG, Fu-Yuan WU, Shang-Yu HSU, Meng-Ting LIN, BingBing MA, Jie DU, Yu-Cheng LIN
  • Patent number: 11397302
    Abstract: An optical system affixed to an electronic apparatus is provided, including a first optical module, a second optical module, and a third optical module. The first optical module is configured to adjust the moving direction of a first light from a first moving direction to a second moving direction, wherein the first moving direction is not parallel to the second moving direction. The second optical module is configured to receive the first light moving in the second moving direction. The first light reaches the third optical module via the first optical module and the second optical module in sequence. The third optical module includes a first photoelectric converter configured to transform the first light into a first image signal.
    Type: Grant
    Filed: October 9, 2020
    Date of Patent: July 26, 2022
    Assignee: TDK TAIWAN CORP.
    Inventors: Chao-Chang Hu, Chih-Wei Weng, Chia-Che Wu, Chien-Yu Kao, Hsiao-Hsin Hu, He-Ling Chang, Chao-Hsi Wang, Chen-Hsien Fan, Che-Wei Chang, Mao-Gen Jian, Sung-Mao Tsai, Wei-Jhe Shen, Yung-Ping Yang, Sin-Hong Lin, Tzu-Yu Chang, Sin-Jhong Song, Shang-Yu Hsu, Meng-Ting Lin, Shih-Wei Hung, Yu-Huai Liao, Mao-Kuo Hsu, Hsueh-Ju Lu, Ching-Chieh Huang, Chih-Wen Chiang, Yu-Chiao Lo, Ying-Jen Wang, Shu-Shan Chen, Che-Hsiang Chiu
  • Publication number: 20210336130
    Abstract: A method of manufacturing a semiconductor device includes: forming a substrate over the substrate, the substrate defining a logic region and a memory region; depositing a bottom electrode layer across the logic region and the memory region; depositing a magnetic tunnel junction (MTJ) layer over the bottom electrode layer; depositing a first conductive layer over the MTJ layer; depositing a sacrificial layer over the first conductive layer; etching the sacrificial layer in the memory region to expose the first conductive layer in the memory region while keeping the first conductive layer in the logic region covered; depositing a second conductive layer in the memory region and the logic region; patterning the second conductive layer to expose the MTJ layer in the memory region; and etching the patterned second conductive layer and the MTJ layer to form a top electrode and an MTJ, respectively, in the memory region.
    Type: Application
    Filed: February 5, 2021
    Publication date: October 28, 2021
    Inventors: Yu-Jen CHIEN, Jung-Tang WU, Szu-Hua WU, Chin-Szu LEE, Meng-Yu WU
  • Publication number: 20210288249
    Abstract: The present disclosure describes an exemplary method that can prevent or reduce out-diffusion of Cu from interconnect layers to magnetic tunnel junction (MTJ) structures. The method includes forming an interconnect layer over a substrate that includes an interlayer dielectric stack with openings therein; disposing a metal in the openings to form corresponding conductive structures; and selectively depositing a diffusion barrier layer on the metal. In the method, selectively depositing the diffusion barrier layer includes pre-treating the surface of the metal; disposing a precursor to selectively form a partially-decomposed precursor layer on the metal; and exposing the partially-decomposed precursor layer to a plasma to form the diffusion barrier layer. The method further includes forming an MTJ structure on the interconnect layer over the diffusion barrier layer, where the bottom electrode of the MTJ structure is aligned to the diffusion barrier layer.
    Type: Application
    Filed: May 28, 2021
    Publication date: September 16, 2021
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Jung-Tang WU, Jui-Hung HO, Chin-Szu LEE, Meng-Yu WU, Szu-Hua WU
  • Publication number: 20210249591
    Abstract: Methods of forming magnetic tunnel junction (MTJ) memory cells used in a magneto-resistive random access memory (MRAM) array are provided. A pre-clean process is performed to remove a metal oxide layer that may form on the top surface of the bottom electrodes of MTJ memory cells during the time the bottom electrode can be exposed to air prior to depositing MTJ layers. The pre-clean processes may include a remote plasma process wherein the metal oxide reacts with hydrogen radicals generated in the remote plasma.
    Type: Application
    Filed: April 26, 2021
    Publication date: August 12, 2021
    Inventors: Jung-Tang Wu, Meng Yu Wu, Szu-Hua Wu, Chin-Szu Lee
  • Patent number: 11024801
    Abstract: The present disclosure describes an exemplary method that can prevent or reduce out-diffusion of Cu from interconnect layers to magnetic tunnel junction (MTJ) structures. The method includes forming an interconnect layer over a substrate that includes an interlayer dielectric stack with openings therein; disposing a metal in the openings to form corresponding conductive structures; and selectively depositing a diffusion barrier layer on the metal. In the method, selectively depositing the diffusion barrier layer includes pre-treating the surface of the metal; disposing a precursor to selectively form a partially-decomposed precursor layer on the metal; and exposing the partially-decomposed precursor layer to a plasma to form the diffusion barrier layer. The method further includes forming an MTJ structure on the interconnect layer over the diffusion barrier layer, where the bottom electrode of the MTJ structure is aligned to the diffusion barrier layer.
    Type: Grant
    Filed: December 5, 2018
    Date of Patent: June 1, 2021
    Inventors: Jung-Tang Wu, Jui-Hung Ho, Chin-Szu Lee, Meng-Yu Wu, Szu-Hua Wu
  • Publication number: 20210119120
    Abstract: A memory device includes a semiconductor substrate, a first dielectric layer, a metal contact, an aluminum nitride layer, an aluminum oxide layer, a second dielectric layer, a metal via, and a memory stack. The first dielectric layer is over the semiconductor substrate. The metal contact passes through the first dielectric layer. The aluminum nitride layer extends along a top surface of the first dielectric layer and a top surface of the metal contact. The aluminum oxide layer extends along a top surface of the aluminum nitride layer. The second dielectric layer is over the aluminum oxide layer. The metal via passes through the second dielectric layer, the aluminum oxide layer, and the aluminum nitride layer and lands on the metal contact. The memory stack lands on the metal via.
    Type: Application
    Filed: December 4, 2020
    Publication date: April 22, 2021
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Jung-Tang WU, Szu-Ping TUNG, Szu-Hua WU, Shing-Chyang PAN, Meng-Yu WU
  • Patent number: 10862026
    Abstract: A memory device includes a semiconductor substrate, a first dielectric layer, a metal contact, a metal nitride layer, an etch stop layer, a second dielectric layer, a metal via, and a memory stack. The first dielectric layer is over the semiconductor substrate. The metal contact passes through the first dielectric layer. The metal nitride layer spans the first dielectric layer and the metal contact. The etch stop layer extends along a top surface of the metal nitride layer, in which a thickness of the metal nitride layer is less than a thickness of the etch stop layer. The second dielectric layer is over the etch stop layer. The metal via passes through the second dielectric layer, the etch stop layer, and the metal nitride layer and lands on the metal contact. The memory stack is in contact with the metal via.
    Type: Grant
    Filed: January 13, 2020
    Date of Patent: December 8, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Jung-Tang Wu, Szu-Ping Tung, Szu-Hua Wu, Shing-Chyang Pan, Meng-Yu Wu
  • Publication number: 20200152864
    Abstract: A memory device includes a semiconductor substrate, a first dielectric layer, a metal contact, a metal nitride layer, an etch stop layer, a second dielectric layer, a metal via, and a memory stack. The first dielectric layer is over the semiconductor substrate. The metal contact passes through the first dielectric layer. The metal nitride layer spans the first dielectric layer and the metal contact. The etch stop layer extends along a top surface of the metal nitride layer, in which a thickness of the metal nitride layer is less than a thickness of the etch stop layer. The second dielectric layer is over the etch stop layer. The metal via passes through the second dielectric layer, the etch stop layer, and the metal nitride layer and lands on the metal contact. The memory stack is in contact with the metal via.
    Type: Application
    Filed: January 13, 2020
    Publication date: May 14, 2020
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Jung-Tang WU, Szu-Ping TUNG, Szu-Hua WU, Shing-Chyang PAN, Meng-Yu WU
  • Patent number: 10634901
    Abstract: A color wheel used in a projector includes X color blocks and Y filter blocks; therein, X is an integer equal to or larger than 3. The X color blocks are defined to be arranged in an annular direction by repeating (N-1) times; therein, N is an integer equal to or larger than 2. The light permeability characteristics of the X color blocks are distinct from one another. The X color blocks correspond to X light colors respectively. The X color blocks are substantially equal in area. The Y filter blocks are formed of the X color blocks. The Y filter blocks correspond to the X light colors. One of the Y filter blocks is formed by two color blocks of one of the X color blocks.
    Type: Grant
    Filed: December 10, 2018
    Date of Patent: April 28, 2020
    Assignee: Qisda Corporation
    Inventors: Meng-Yu Wu, Tsung-Hsun Wu, Chih-Chieh Tsung
  • Patent number: 10535816
    Abstract: A via structure, a MRAM device using the via structure and a method for fabricating the MRAM device are provided. In the method for fabricating the MRAM device, at first, a first dielectric layer is deposited over a transistor. Then, a contact is formed in the first dielectric layer and electrically connected to the transistor. Thereafter, a metal nitride layer is deposited over the first dielectric layer and the contact. Then, an etch stop layer is deposited over the metal nitride layer. Thereafter, a second dielectric layer is deposited over the etch stop layer. Then, a via structure is formed in the second dielectric layer, the etch stop layer, and the metal nitride layer and landing on the contact. Thereafter, a memory stack is formed over the via structure.
    Type: Grant
    Filed: August 9, 2018
    Date of Patent: January 14, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Jung-Tang Wu, Szu-Ping Tung, Szu-Hua Wu, Shing-Chyang Pan, Meng-Yu Wu
  • Publication number: 20200006639
    Abstract: The present disclosure describes an exemplary method that can prevent or reduce out-diffusion of Cu from interconnect layers to magnetic tunnel junction (MTJ) structures. The method includes forming an interconnect layer over a substrate that includes an interlayer dielectric stack with openings therein; disposing a metal in the openings to form corresponding conductive structures; and selectively depositing a diffusion barrier layer on the metal. In the method, selectively depositing the diffusion barrier layer includes pre-treating the surface of the metal; disposing a precursor to selectively form a partially-decomposed precursor layer on the metal; and exposing the partially-decomposed precursor layer to a plasma to form the diffusion barrier layer. The method further includes forming an MTJ structure on the interconnect layer over the diffusion barrier layer, where the bottom electrode of the MTJ structure is aligned to the diffusion barrier layer.
    Type: Application
    Filed: December 5, 2018
    Publication date: January 2, 2020
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Jung-Tang WU, Jui-Hung HO, Chin-Szu LEE, Meng-Yu WU, Szu-Hua WU
  • Publication number: 20190179133
    Abstract: A color wheel used in a projector includes X color blocks and Y filter blocks; therein, X is an integer equal to or larger than 3. The X color blocks are defined to be arranged in an annular direction by repeating (N-1) times; therein, N is an integer equal to or larger than 2. The light permeability characteristics of the X color blocks are distinct from one another. The X color blocks correspond to X light colors respectively. The X color blocks are substantially equal in area. The Y filter blocks are formed of the X color blocks. The Y filter blocks correspond to the X light colors. One of the Y filter blocks is formed by two color blocks of one of the X color blocks.
    Type: Application
    Filed: December 10, 2018
    Publication date: June 13, 2019
    Inventors: Meng-Yu Wu, Tsung-Hsun Wu, Chih-Chieh Tsung
  • Publication number: 20190157548
    Abstract: A via structure, a MRAM device using the via structure and a method for fabricating the MRAM device are provided. In the method for fabricating the MRAM device, at first, a first dielectric layer is deposited over a transistor. Then, a contact is formed in the first dielectric layer and electrically connected to the transistor. Thereafter, a metal nitride layer is deposited over the first dielectric layer and the contact. Then, an etch stop layer is deposited over the metal nitride layer. Thereafter, a second dielectric layer is deposited over the etch stop layer. Then, a via structure is formed in the second dielectric layer, the etch stop layer, and the metal nitride layer and landing on the contact. Thereafter, a memory stack is formed over the via structure.
    Type: Application
    Filed: August 9, 2018
    Publication date: May 23, 2019
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Jung-Tang WU, Szu-Ping TUNG, Szu-Hua WU, Shing-Chyang PAN, Meng-Yu WU
  • Patent number: 8703410
    Abstract: The present invention relates to a CO2 laser-transparent material having a mark on the surface thereof and the method for making the same. The method includes the following steps: providing a first substrate, which has a top surface and a bottom surface; providing a second substrate which has a top surface; putting the bottom surface of the first substrate on the top surface of the second substrate; irradiating a CO2 laser beam to the top surface of the second substrate by passing through the top surface and the bottom surface of the first substrate; and forming a mark on the bottom surface of the first substrate. The material of the mark is oxide of the second substrate or the same as the material of the second substrate. Whereby the cheap CO2 laser is utilized to form the mark on the first substrate, and the mark can be erased easily by a proper chemical for recycling the first substrate.
    Type: Grant
    Filed: September 11, 2013
    Date of Patent: April 22, 2014
    Assignee: National Cheng Kung University
    Inventors: Chen-Kuei Chung, Meng-Yu Wu, En-Jou Hsiao, Shih-Lung Lin
  • Publication number: 20140017463
    Abstract: The present invention relates to a CO2 laser-transparent material having a mark on the surface thereof and the method for making the same. The method includes the following steps: providing a first substrate, which has a top surface and a bottom surface; providing a second substrate which has a top surface; putting the bottom surface of the first substrate on the top surface of the second substrate; irradiating a CO2 laser beam to the top surface of the second substrate by passing through the top surface and the bottom surface of the first substrate; and forming a mark on the bottom surface of the first substrate. The material of the mark is oxide of the second substrate or the same as the material of the second substrate. Whereby the cheap CO2 laser is utilized to form the mark on the first substrate, and the mark can be erased easily by a proper chemical for recycling the first substrate.
    Type: Application
    Filed: September 11, 2013
    Publication date: January 16, 2014
    Applicant: NATIONAL CHENG KUNG UNIVERSITY
    Inventors: Chen-Kuei CHUNG, Meng-Yu WU, En-Jou HSIAO, Shih-Lung LIN
  • Patent number: 8557715
    Abstract: The present invention relates to a CO2 laser-transparent material having a mark on the surface thereof and the method for making the same. The method includes the following steps: providing a first substrate, which has a top surface and a bottom surface; providing a second substrate which has a top surface; putting the bottom surface of the first substrate on the top surface of the second substrate; irradiating a CO2 laser beam to the top surface of the second substrate by passing through the top surface and the bottom surface of the first substrate; and forming a mark on the bottom surface of the first substrate. The material of the mark is oxide of the second substrate or the same as the material of the second substrate. Whereby the cheap CO2 laser is utilized to form the mark on the first substrate, and the mark can be erased easily by a proper chemical for recycling the first substrate.
    Type: Grant
    Filed: July 19, 2010
    Date of Patent: October 15, 2013
    Assignee: National Cheng Kung University
    Inventors: Chen-Kuei Chung, Meng-Yu Wu, En-Jou Hsiao, Shih-Lung Lin
  • Publication number: 20100308441
    Abstract: The present invention relates to a CO2 laser-transparent material having a mark on the surface thereof and the method for making the same. The method includes the following steps: providing a first substrate, which has a top surface and a bottom surface; providing a second substrate which has a top surface; putting the bottom surface of the first substrate on the top surface of the second substrate; irradiating a CO2 laser beam to the top surface of the second substrate by passing through the top surface and the bottom surface of the first substrate; and forming a mark on the bottom surface of the first substrate. The material of the mark is oxide of the second substrate or the same as the material of the second substrate. Whereby the cheap CO2 laser is utilized to form the mark on the first substrate, and the mark can be erased easily by a proper chemical for recycling the first substrate.
    Type: Application
    Filed: July 19, 2010
    Publication date: December 9, 2010
    Inventors: Chen-Kuei CHUNG, Meng-Yu Wu, En-Jou Hsiao, Shih-Lung Lin
  • Publication number: 20080009093
    Abstract: The present invention relates to a silicon material having a mark on the surface thereof and the method for making the same. The method comprises the following steps: (a) providing a silicon material; (b) providing a glass substrate; (c) putting the silicon material on the glass substrate; and (d) focusing a CO2 laser beam on the silicon material as to form a mark on the bottom surface of the silicon material, wherein the material of the mark is silicon oxide. Whereby the cheap CO2 laser is utilized to form the mark on the silicon material, and the mark can be erased easily by a proper chemical for recycling the silicon material.
    Type: Application
    Filed: March 20, 2007
    Publication date: January 10, 2008
    Inventors: Chen-Kuei Chung, Meng-Yu Wu, En-Jou Hsiao