Abstract: A semiconductor device and method of fabricating the same include a substrate, a first epitaxial layer, a first protection layer, and a contact etching stop layer. The substrate includes a PMOS transistor region, and the first epitaxial layer is disposed on the substrate, within the PMOS transistor region. The first protection layer is disposed on the first epitaxial layer, covering surfaces of the first epitaxial layer. The contact etching stop layer is disposed on the first protection layer and the substrate, wherein a portion of the first protection layer is exposed from the contact etching stop layer.

Abstract: A method for preparing stacking structure includes providing a substrate; disposing a metallic layer and a silver nanowire layer on the substrate; applying flexographic printing technology to print an anti-etching layer on a surface of the metallic layer or the silver nanowire layer so that the anti-etching layer partially covers the metallic layer or the silver nanowire layer; applying an etching technology to remove a part of the metallic layer or the silver nanowire layer that is not covered by the anti-etching layer and the metallic layer or the silver nanowire layer disposed therebelow with an etching liquid so that the metallic layer comprises: metallic wires; a metallic grid; and a metallic plate; and removing the anti-etching layer. A stacking structure comprises: the substrate; the metallic layer; and the silver nanowire layer. The method for preparing stacking structure and the stacking structure can be applied to a touch sensor.

Abstract: A method of producing a stacking structure includes providing a substrate; printing, by flexography, a catalyst layer onto the substrate, wherein the catalyst layer includes a grid pattern and a conducting wire pattern connected to the grid pattern; plating, by chemical plating, a metal layer onto the catalyst layer, wherein the metal layer includes a metal grid corresponding in position to the grid pattern of the catalyst layer and a metal conducting wire corresponding in position to the conducting wire pattern of the catalyst layer; and printing, by flexography, a silver nanowire layer onto the metal layer, wherein the silver nanowire layer at least partially overlaps the metal grid. A stacking structure includes a substrate; a catalyst layer; a metal layer; and a silver nanowire layer. The method of producing a stacking structure and the stacking structure are applicable to a touch sensor.

Abstract: A stacking structure preparation method includes the steps of providing a substrate; printing a silver nanowire layer on the substrate using a flexographic printing process; and printing a meal layer on the substrate and the silver nanowire layer also using the flexographic printing process. The metal layer includes a metal mesh that covers at least a part of the substrate and the silver nanowire layer, and a plurality of metal traces that is connected to the metal mesh. A stacking structure formed through the above preparation method is also disclosed. The stacking structure includes, from bottom to top, a substrate, a flexo printed silver nanowire layer, and a flexo printed metal layer partially covering the substrate and the silver nanowire layer. The above preparation method and stacking structure can be applied to the manufacturing of a touch sensor.

Abstract: A method for preparing stacking structure includes providing a substrate; disposing a metallic layer and a silver nanowire layer on the substrate; applying flexographic printing technology to print an anti-etching layer on a surface of the metallic layer or the silver nanowire layer so that the anti-etching layer partially covers the metallic layer or the silver nanowire layer; applying an etching technology to remove a part of the metallic layer or the silver nanowire layer that is not covered by the anti-etching layer and the metallic layer or the silver nanowire layer disposed therebelow with an etching liquid so that the metallic layer comprises: metallic wires; a metallic grid; and a metallic plate; and removing the anti-etching layer. A stacking structure comprises: the substrate; the metallic layer; and the silver nanowire layer. The method for preparing stacking structure and the stacking structure can be applied to a touch sensor.

Abstract: A method of producing a stacking structure includes providing a substrate; printing, by flexography, a catalyst layer onto the substrate, wherein the catalyst layer includes a grid pattern and a conducting wire pattern connected to the grid pattern; plating, by chemical plating, a metal layer onto the catalyst layer, wherein the metal layer includes a metal grid corresponding in position to the grid pattern of the catalyst layer and a metal conducting wire corresponding in position to the conducting wire pattern of the catalyst layer; and printing, by flexography, a silver nanowire layer onto the metal layer, wherein the silver nanowire layer at least partially overlaps the metal grid. A stacking structure includes a substrate; a catalyst layer; a metal layer; and a silver nanowire layer. The method of producing a stacking structure and the stacking structure are applicable to a touch sensor.

Abstract: A touch panel and a manufacturing method thereof are provided. The touch panel includes a substrate, peripheral leads, a touch-sensing electrode, and first covers. The peripheral leads are disposed on the substrate. Each peripheral lead has a sidewall and an upper surface. The first covers cover the upper surfaces of the peripheral leads. The touch-sensing electrode includes a plurality of modified metal nanowires. The modified metal nanowires have first surfaces in direct contact with each other at an intersection. The modified metal nanowires have second surfaces with a covering structure, and the second surfaces are at non-intersections.

Abstract: A touch panel and a manufacturing method thereof are provided. The touch panel includes a substrate, peripheral leads, a touch-sensing electrode, and first covers. The peripheral leads are disposed on the substrate. Each peripheral lead has a sidewall and an upper surface. The first covers cover the upper surfaces of the peripheral leads. The touch-sensing electrode includes a plurality of modified metal nanowires. The modified metal nanowires have first surfaces in direct contact with each other at an intersection. The modified metal nanowires have second surfaces with a covering structure, and the second surfaces are at non-intersections.