Abstract: The invention relates to a new method of texturing silicon surfaces suited for antireflection based on ion implantation of hydrogen and heavy ions or heavy elements combined with thermal annealing or thermal annealing and oxidation. The addition of the heavy ions or heavy elements allows for a more effective anti-reflective surface than is found when only hydrogen implantation is utilized. The methods used are also time- and cost-effective, as they can utilize already existing semiconductor ion implantation fabrication equipment and reduce the number of necessary steps. The antireflective surfaces are useful for silicon-based solar cells.

Abstract: Electromagnetic radiation barriers and waveguides, including barriers and waveguides for light, are disclosed. The barriers and waveguides are fabricated by directing charged particles, for example, ions, into crystalline substrates, for example, single-crystal sapphire substrates, to modify the crystal structure and produce a region of varying refractive index. These substrates are then heated to temperatures greater than 200 degrees C. to stabilize the modified crystal structure and provide the barrier to electromagnetic radiation. Since the treatment stabilizes the crystal structure at elevated temperature, for example, above 500 degrees C. or above 1000 degrees C., the barriers and waveguides disclosed are uniquely adapted for use in detecting conditions in harsh environments, for example, at greater than 200 degrees C. Sensors, systems for using sensors, and methods for fabricating barriers and waveguides are also disclosed.

Abstract: Electromagnetic radiation barriers and waveguides, including barriers and waveguides for light, are disclosed. The barriers and waveguides are fabricated by directing charged particles, for example, ions, into crystalline substrates, for example, single-crystal sapphire substrates, to modify the crystal structure and produce a region of varying refractive index. These substrates are then heated to temperatures greater than 200 degrees C. to stabilize the modified crystal structure and provide the barrier to electromagnetic radiation. Since the treatment stabilizes the crystal structure at elevated temperature, for example, above 500 degrees C. or above 1000 degrees C., the barriers and waveguides disclosed are uniquely adapted for use in detecting conditions in harsh environments, for example, at greater than 200 degrees C. Sensors, systems for using sensors, and methods for fabricating barriers and waveguides are also disclosed.

Abstract: The invention relates to a new method of texturing silicon surfaces suited for antireflection based on ion implantation of hydrogen and heavy ions or heavy elements combined with thermal annealing or thermal annealing and oxidation. The addition of the heavy ions or heavy elements allows for a more effective anti-reflective surface than is found when only hydrogen implantation is utilized. The methods used are also time- and cost-effective, as they can utilize already existing semiconductor ion implantation fabrication equipment and reduce the number of necessary steps. The antireflective surfaces are useful for silicon-based solar cells.

Abstract: A manganese-implanted silicon substrate exhibits ferromagnetism and a Curie temperature above room temperature when magnetized. The implant is done at a temperature of between about 250 C and about 800 C, while the manganese concentration is between about 0.01 atomic percent and 10 atomic percent. The silicon substrate can be p- or n-type with a doping concentration between 1015 and 1021 cm?3. Annealing may be done to increase the saturation magnetization.

Abstract: A manganese-implanted silicon substrate exhibits ferromagnetism and a Curie temperature above room temperature when magnetized. The implant is done at a temperature of between about 250 C and about 800 C, while the manganese concentration is between about 0.01 atomic percent and 10 atomic percent. The silicon substrate can be p- or n-type with a doping concentration between 1015 and 1021 cm?3. Annealing may be done to increase the saturation magnetization.