Patents by Inventor Meng-Chun Yu

Meng-Chun Yu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method to fabricate GaN-based vertical-cavity surface-emitting devices featuring silicon-diffusion defined current blocking layer
    Patent number: 9819152
    Abstract: This invention discloses a method for the fabrication of GaN-based vertical cavity surface-emitting devices featuring a silicon-diffusion defined current blocking layer (CBL). Such devices include vertical-cavity surface-emitting laser (VCSEL) and resonant-cavity light-emitting diode (RCLED). The silicon-diffused P-type GaN region can be converted into N-type GaN and thereby attaining a current blocking effect under reverse bias. And the surface of the silicon-diffused area is flat so the thickness of subsequent optical coating is uniform across the emitting aperture. Thus, this method effectively reduces the optical-mode field diameter of the device, significantly decreases the spectral width of LED, and produces single-mode emission of VCSEL.
    Type: Grant
    Filed: October 7, 2015
    Date of Patent: November 14, 2017
    Assignee: NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY
    Inventors: Ping-Hui Yeh, Meng-Chun Yu, Jia-Huan LIn, Ching-Chin Huang
  • Method to fabricate GaN-based vertical-cavity surface-emitting devices featuring silicon-diffusion defined current blocking layer
    Publication number: 20170104315
    Abstract: This invention discloses a method for the fabrication of GaN-based vertical cavity surface-emitting devices featuring a silicon-diffusion defined current blocking layer (CBL). Such devices include vertical-cavity surface-emitting laser (VCSEL) and resonant-cavity light-emitting diode (RCLED). The silicon-diffused P-type GaN region can be converted into N-type GaN and thereby attaining a current blocking effect under reverse bias. And the surface of the silicon-diffused area is flat so the thickness of subsequent optical coating is uniform across the emitting aperture.
    Type: Application
    Filed: October 7, 2015
    Publication date: April 13, 2017
    Inventors: PING-HUI YEH, Meng-Chun Yu, Jia-Huan Lin, Ching-Chin Huang