Patents by Inventor Mengdan ZHAN

Mengdan ZHAN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor structure and manufacturing method thereof
    Patent number: 11856756
    Abstract: The present disclosure provides a semiconductor structure and a manufacturing method thereof, and relates to the technical field of semiconductors. The method of manufacturing the semiconductor structure includes: providing a substrate; forming, on the substrate, a first initial conductive layer, a sacrificial layer and a first mask layer with a pattern that are stacked sequentially, a thickness of the sacrificial layer being 10 nm-20 nm; and etching, with the first mask layer as a mask, the first initial conductive layer and the substrate to form a bit line (BL) contact region.
    Type: Grant
    Filed: April 13, 2022
    Date of Patent: December 26, 2023
    Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
    Inventor: Mengdan Zhan
  • SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
    Publication number: 20230013207
    Abstract: The present disclosure provides a semiconductor structure and a manufacturing method thereof, and relates to the technical field of semiconductors. The method of manufacturing the semiconductor structure includes: providing a substrate; forming, on the substrate, a first initial conductive layer, a sacrificial layer and a first mask layer with a pattern that are stacked sequentially, a thickness of the sacrificial layer being 10 nm-20 nm; and etching, with the first mask layer as a mask, the first initial conductive layer and the substrate to form a bit line (BL) contact region.
    Type: Application
    Filed: April 13, 2022
    Publication date: January 19, 2023
    Inventor: Mengdan ZHAN