Abstract: A memory device and an operation method thereof are provided. The memory device includes memory cells, each having a static random access memory (SRAM) cell and a non-volatile memory cell. The SRAM cell is configured to store complementary data at first and second storage nodes. The non-volatile memory cell is configured to replicate and retain the complementary data before the SRAM cell loses power supply, and to rewrite the replicated data to the first and second storage nodes of the SRAM cell after the power supply of the SRAM cell is restored.

Abstract: An information handling system includes a host processing system and a Liquid Crystal Display device. The host processing system includes a graphics processing unit (GPU) and the LCD device includes a memory device and a DisplayPort Configuration Data (DPCD) register. The host processing system 1) determines whether the first GPU supports a Dynamic Display Shifting (DDS) mode, 2) when the GPU does not support the DDS mode, provides a first indication to the LCD device that the GPU does not support the DDS mode, and 3) when the GPU supports the DDS mode, provides a second indication to the LCD device that the GPU supports the DDS mode. The LCD device retrieves a Panel Self Refresh (PSR) setting from the memory device and stores the PSR setting to the DPCD register in response to the first indication, and retrieves a DDS setting from the memory and stores the DDS setting to the DPCD register in response to the second indication.

Abstract: The present invention provides a differential varactor device including a substrate having a first conductive type, a well having a second conductive type, five doped regions having the second conductive type, a first gate, a second gate, a third gate, and a fourth gate. The well is disposed in the substrate, and the doped regions are disposed in the well and arranged along a direction. The first gate, the second gate, the third gate and the fourth gate are respectively disposed on the well between any two of the adjacent doped regions, and are arranged sequentially along the direction.

Abstract: The present invention provides a differential varactor device including a substrate having a first conductive type, a well having a second conductive type, five doped regions having the second conductive type, a first gate, a second gate, a third gate, and a fourth gate. The well is disposed in the substrate, and the doped regions are disposed in the well and arranged along a direction. The first gate, the second gate, the third gate and the fourth gate are respectively disposed on the well between any two of the adjacent doped regions, and are arranged sequentially along the direction.