Patents by Inventor Menghan AO

Menghan AO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11348943
    Abstract: The present disclosure relates to a non-volatile ferroelectric memory and a method of preparing the same. The ferroelectric memory includes a ferroelectric storage layer, a first electrode and a second electrode; the first electrode and the second electrode each include a buried conductive layer formed by patterning in a surface of the ferroelectric storage layer and an electrode layer formed on the buried conductive layer; and when a write signal in a certain direction is applied between the first electrode and the second electrode, the electric domains of a part of the ferroelectric storage layer between a pair of the buried conductive layers are enabled to be reversed, so that a domain wall conductive passage that electrically connects the first electrode and the second electrode can be established.
    Type: Grant
    Filed: July 17, 2020
    Date of Patent: May 31, 2022
    Assignee: Fudan University
    Inventors: Anquan Jiang, Xiaojie Chai, Jianwei Lian, Jun Jiang, Menghan Ao
  • Publication number: 20210036017
    Abstract: The present disclosure relates to a non-volatile ferroelectric memory and a method of preparing the same. The ferroelectric memory includes a ferroelectric storage layer, a first electrode and a second electrode; the first electrode and the second electrode each include a buried conductive layer formed by patterning in a surface of the ferroelectric storage layer and an electrode layer formed on the buried conductive layer; and when a write signal in a certain direction is applied between the first electrode and the second electrode, the electric domains of a part of the ferroelectric storage layer between a pair of the buried conductive layers are enabled to be reversed, so that a domain wall conductive passage that electrically connects the first electrode and the second electrode can be established.
    Type: Application
    Filed: July 17, 2020
    Publication date: February 4, 2021
    Inventors: Anquan JIANG, Xiaojie CHAI, Jianwei LIAN, Jun JIANG, Menghan AO