Abstract: A semiconductor device and method of manufacture are provided. In embodiments a memory array is formed by manufacturing portions of a word line during different and separate processes, thereby allowing the portions formed first to act as a structural support during later processes that would otherwise cause undesired damage to the structures.

Abstract: A memory array device includes a stack of transistors over a semiconductor substrate, a first transistor of the stack being disposed over a second transistor of the stack. The first transistor includes a first memory film along a first word line and a first channel region along a source line and a bit line, the first memory film being disposed between the first channel region and the first word line. The second transistor includes a second memory film along a second word line and a second channel region along the source line and the bit line, the second memory film being disposed between the second channel region and the second word line. The memory array device includes a first via electrically connected to the first word line and a second via electrically connected to the second word line, the second staircase via and the first staircase via having different widths.

Abstract: In accordance with embodiments, a memory array is formed with a multiple patterning process. In embodiments a first trench is formed within a multiple layer stack and a first conductive material is deposited into the first trench. After the depositing the first conductive material, a second trench is formed within the multiple layer stack, and a second conductive material is deposited into the second trench. The first conductive material and the second conductive material are etched.

Abstract: A method includes the following steps. A photoresist is exposed to a first light-exposure through a first mask, wherein the first mask includes a first stitching region, and a first portion of the photoresist corresponding to a first opaque portion of the first stitching region is unexposed. The photoresist is exposed to a second light-exposure through a second mask, wherein the second mask includes a second stitching region, and a second portion of the photoresist corresponding to a second opaque portion of the second stitching region is unexposed and is overlapping with the first portion of the photoresist.

Abstract: A memory device includes a first stacking structure, a second stacking structure, a plurality of first isolation structures, gate dielectric layers, channel layers and conductive pillars. The first stacking structure includes a plurality of first gate layers, and a second stacking structure includes a plurality of second gate layers, where the first stacking structure and the second stacking structure are located on a substrate and separated from each other through a trench. The first isolation structures are located in the trench, where a plurality of cell regions are respectively confined between two adjacent first isolation structures of the first isolation structures in the trench, where the first isolation structures each includes a first main layer and a first liner surrounding the first main layer, where the first liner separates the first main layer from the first stacking structure and the second stacking structure.

Abstract: A memory device includes at least one bit line, at least one word line, at least one memory cell, at least one source line, and a controller electrically coupled to the at least one memory cell via the at least one word line, the at least one bit line, and the at least one source line. The memory cell includes a first transistor, data storage elements, and second transistors corresponding to the data storage elements. The first transistor includes a gate electrically coupled to the word line, and first and second source/drains. Each data storage element and the corresponding second transistor are electrically coupled in series with the first source/drain of the first transistor and the bit line. The controller controllably applies a voltage other than a ground voltage to the at least one source line in an operation of a selected data storage element among the data storage elements.

Abstract: An optoelectronic package and a method for producing the optoelectronic package are provided. The optoelectronic package includes a carrier, a photonic device, a first encapsulant and a second encapsulant. The photonic device is disposed on the carrier. The first encapsulant covers the carrier and is disposed around the photonic device. The second encapsulant covers the first encapsulant and the photonic device. The first encapsulant has a topmost position and a bottommost position, and the topmost position is not higher than a surface of the photonic device.

Abstract: An integrated circuit (IC) chip package and a method of fabricating the same are disclosed. The IC chip package includes a device layer on a first surface of a substrate, a first interconnect structure on the device layer, and a second interconnect structure on the second surface of the substrate. The first interconnect structure includes a fault detection line in a first metal line layer and configured to emit an electrical or an optical signal that is indicative of a presence or an absence of a defect in the device layer, a metal-free region on the fault detection line, and a metal line adjacent to the fault detection line in the first metal line layer. The fault detection line is electrically connected to the device layer.

Abstract: The present disclosure describes a structure that includes a substrate with first and second sides, a device layer disposed on the first side of the substrate, having a fault detection area on a back-side surface of the device layer configured to emit a signal that is indicative of a presence or an absence of a defect in the device layer, a first interconnect structure disposed on a front-side of the device layer, and a second interconnect structure disposed on the second side of the substrate, having a metal-free region aligned with the fault detection area and a first metal layer having first and second conductive lines disposed substantially parallel to each other. First and second sidewalls of the first and second conductive lines, respectively, facing each other are substantially aligned with first and second sides of the fault detection area.