Abstract: A device for realizing the splicing of an array fiber and a large-size quartz end cap comprises a carbon dioxide laser, a light splitter, a light beam shaper, a high reflectivity mirror, an image detection module, an array fiber and a carrier thereof, a large-size quartz end cap and a carrier thereof, a stepping motor, a thermodetector, and a computer; a laser beam emitted by the carbon dioxide laser is divided into two light beams through a light splitter, after the two light beams respectively pass through the beam shaper and the high reflectivity mirror, two strip-shaped light spots with uniform power density are integrally formed to heat a splicing face of the large-size quartz end cap, a uniform temperature field of a target splicing area is achieved through indirect heating and heat conduction.

Abstract: A monolithic integrated multi-segment cascade optical frequency comb and its chip are disclosed, which belongs to the technical field of sensing detection, quantum information and optical communication technology. The optical frequency comb includes a first semiconductor passive mode-locking laser, a semiconductor optical amplifier, and a second semiconductor passive mode-locking laser sequentially integrated and connected; the first semiconductor passive mode-locking laser includes a first reverse bias absorption area integrated with an optogalvanic distribution grating and a first gain cavity length extender (coupled multi-ring or multi-disk); the second semiconductor passive mode-locking laser includes a second reverse bias absorption area and a second gain cavity length extender (coupled multi-ring or multi-disk); each structure is connected to each other by electrical isolation grooves.

Abstract: A device for realizing the splicing of an array fiber and a large-size quartz end cap comprises a carbon dioxide laser, a light splitter, a light beam shaper, a high reflectivity mirror, an image detection module, an array fiber and a carrier thereof, a large-size quartz end cap and a carrier thereof, a stepping motor, a thermodetector, and a computer; a laser beam emitted by the carbon dioxide laser is divided into two light beams through a light splitter, after the two light beams respectively pass through the beam shaper and the high reflectivity mirror, two strip-shaped light spots with uniform power density are integrally formed to heat a splicing face of the large-size quartz end cap, a uniform temperature field of a target splicing area is achieved through indirect heating and heat conduction.

Abstract: An optoelectronic device as well as its methods of use and manufacture are disclosed. In one embodiment, an optoelectronic device includes first and second semiconducting atomically thin layers with corresponding first and second lattice directions. The first and second semiconducting atomically thin layers are located proximate to each other, and an angular difference between the first lattice direction and the second lattice direction is between about 0.000001° and 0.5°, or about 0.000001° and 0.5° deviant from of a Vicnal angle of the first and second semiconducting atomically thin layers. Alternatively, or in addition to the above, the first and second semiconducting atomically thin layers may form a Moiré superlattice of exciton funnels with a period between about 50 nm to 3 cm. The optoelectronic device may also include charge carrier conductors in electrical communication with the semiconducting atomically thin layers to either inject or extract charge carriers.

Abstract: An optoelectronic device as well as its methods of use and manufacture are disclosed. In one embodiment, an optoelectronic device includes first and second semiconducting atomically thin layers with corresponding first and second lattice directions. The first and second semiconducting atomically thin layers are located proximate to each other, and an angular difference between the first lattice direction and the second lattice direction is between about 0.000001° and 0.5°, or about 0.000001° and 0.5° deviant from of a Vicnal angle of the first and second semiconducting atomically thin layers. Alternatively, or in addition to the above, the first and second semiconducting atomically thin layers may form a Moiré superlattice of exciton funnels with a period between about 50 nm to 3 cm. The optoelectronic device may also include charge carrier conductors in electrical communication with the semiconducting atomically thin layers to either inject or extract charge carriers.

Abstract: An optoelectronic device as well as its methods of use and manufacture are disclosed. In one embodiment, an optoelectronic device includes first and second semiconducting atomically thin layers with corresponding first and second lattice directions. The first and second semiconducting atomically thin layers are located proximate to each other, and an angular difference between the first lattice direction and the second lattice direction is between about 0.000001° and 0.5°, or about 0.000001° and 0.5° deviant from of a Vicnal angle of the first and second semiconducting atomically thin layers. Alternatively, or in addition to the above, the first and second semiconducting atomically thin layers may form a Moiré superlattice of exciton funnels with a period between about 50 nm to 3 cm. The optoelectronic device may also include charge carrier conductors in electrical communication with the semiconducting atomically thin layers to either inject or extract charge carriers.

Abstract: An optoelectronic device as well as its methods of use and manufacture are disclosed. In one embodiment, an optoelectronic device includes first and second semiconducting atomically thin layers with corresponding first and second lattice directions. The first and second semiconducting atomically thin layers are located proximate to each other, and an angular difference between the first lattice direction and the second lattice direction is between about 0.000001° and 0.5°, or about 0.000001° and 0.5° deviant from of a Vicnal angle of the first and second semiconducting atomically thin layers. Alternatively, or in addition to the above, the first and second semiconducting atomically thin layers may form a Moiré superlattice of exciton funnels with a period between about 50 nm to 3 cm. The optoelectronic device may also include charge carrier conductors in electrical communication with the semiconducting atomically thin layers to either inject or extract charge carriers.