Abstract: Exemplary processing methods may include depositing a boron-containing material or a silicon-and-boron-containing material on a substrate disposed within a processing region of a semiconductor processing chamber. The methods may include etching portions of the boron-containing material or the silicon-and-boron-containing material with a chlorine-containing precursor to form one or more features in the substrate. The methods may also include removing remaining portions of the boron-containing material or the silicon-and-boron-containing material from the substrate with a fluorine-containing precursor.

Abstract: Methods of semiconductor processing may include forming plasma effluents of a plurality of precursors (e.g., an etchant precursor, an oxygen-containing precursor, and a silicon-and-fluorine-containing precursor like silicon tetrafluoride). The plasma effluents may then contact a silicon-containing material and a mask material on a substrate in a processing region of a semiconductor processing chamber. The mask material may have one or more apertures therein that allow the plasma effluents access to the silicon-containing material. Contacting the silicon-containing material and the mask material with the plasma effluents may cause (i) etching the silicon-containing material with the plasma effluents to form and/or deepen one or more features in the silicon-containing material and (ii) simultaneously etching the mask material and depositing a silicon-and-oxygen-containing material on the mask material with the plasma effluents.

Abstract: Exemplary semiconductor processing methods may include providing an oxygen-containing precursor and a sulfur-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be housed in the processing region. A layer of carbon-containing material may be disposed on the substrate. The methods may include forming plasma effluents of the oxygen-containing precursor and the sulfur-containing precursor. The methods may include contacting the substrate with the plasma effluents of the oxygen-containing precursor and the sulfur-containing precursor. The contacting may etch a feature in the layer of carbon-containing material. A chamber operating temperature may be maintained at less than or about 0° C.

Abstract: Exemplary semiconductor processing methods may include providing a fluorine-containing precursor and a carbon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be housed in the processing region. A layer of oxygen-containing material may be disposed on the substrate. The methods may include forming plasma effluents of the fluorine-containing precursor and the carbon-containing precursor. The methods may include contacting the substrate with the plasma effluents of the fluorine-containing precursor and the carbon-containing precursor. The contacting may etch a feature in the layer of oxygen-containing material. A semiconductor processing chamber operating temperature may be maintained at less than or about 0° C. during the semiconductor processing method.

Abstract: Exemplary processing methods may include depositing a boron-containing material or a silicon-and-boron-containing material on a substrate disposed within a processing region of a semiconductor processing chamber. The methods may include etching portions of the boron-containing material or the silicon-and-boron-containing material with a chlorine-containing precursor to form one or more features in the substrate. The methods may also include removing remaining portions of the boron-containing material or the silicon-and-boron-containing material from the substrate with a fluorine-containing precursor.

Abstract: Compact and power efficient acoustically actuated magnetoelectric antennas for transmitting and receiving very low frequency (VLF) electromagnetic waves utilize magnetoelectric coupling in a magnetic/piezoelectric heterostructure to provide voltage control of magnetization in transmission mode and magnetic control of electric polarization in receiving mode. The magnetoelectric antennas provide a power efficiency enhanced by orders of magnitude compared to magnetically or mechanically switching the magnetization. The antennas can be used in groups or arrays and can be combined to form VLF communication systems.

Abstract: Compact and power efficient acoustically actuated magnetoelectric antennas for transmitting and receiving very low frequency (VLF) electromagnetic waves utilize magnetoelectric coupling in a magnetic/piezoelectric heterostructure to provide voltage control of magnetization in transmission mode and magnetic control of electric polarization in receiving mode. The magnetoelectric antennas provide a power efficiency enhanced by orders of magnitude compared to magnetically or mechanically switching the magnetization. The antennas can be used in groups or arrays and can be combined to form VLF communication systems.

Abstract: Aspects of the present disclosure relate to a network-based quick trace navigation system that includes a client device in communication with an application server executing the quick trace navigation system over a network. For example, the quick trace navigation system may be or include a group of one or more server machines. Users of the quick trace navigation system are presented with a navigation menu that includes a presentation of screenshots of pages previously accessed by a user of a client device.