Abstract: A diffused field-effect transistor (FET) and a method of fabricating same are disclosed. The diffused FET is dually optimized in voltage resistance by incorporating both a trench isolation structure and a thick second oxide layer and thus has a more significantly improved breakdown voltage. With the thick second oxide layer ensuring suitable voltage resistance of the transistor device, its on-resistance can be reduced either by reducing the size of the trench isolation structure or increasing an ion dopant concentration of a drift region. As such, a good tradeoff between voltage resistance and on-resistance is achievable.

Abstract: The disclosure relates to testing software for operating an autonomous vehicle. In one instance, a simulation may be run using log data collected by a vehicle operating in an autonomous driving mode. The simulation may be run using the software to control a simulated vehicle and by modifying a characteristic of an agent identified in the log data. During the running of the simulation, that a first type of interaction between the first simulated vehicle and the modified agent will occur may be determined. In response to determining that the particular type of interaction will occur, the modified agent may be replaced by a interactive agent that simulates a road user corresponding to the modified agent that is capable of responding to actions performed by simulated vehicles. That the particular type of interaction between the simulated vehicle and the interactive agent has occurred in the simulation may be determined.