Patents by Inventor Mengshu Hsu

Mengshu Hsu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Circuits, devices, methods and applications related to silicon-on-insulator based radio-frequency switches
    Patent number: 9160328
    Abstract: Radio-frequency (RF) switch circuits are disclosed providing improved switching performance. An RF switch system includes a plurality of field-effect transistors (FETs) connected in series between first and second nodes, each FET having a gate and a body. A compensation network including a gate-coupling circuit couples the gates of each pair of neighboring FETs. The compensation network may further including a body-coupling circuit that couples the bodies of each pair of neighboring FETs.
    Type: Grant
    Filed: July 6, 2013
    Date of Patent: October 13, 2015
    Inventors: Fikret Altunkilic, Guillaume Alexandre Blin, Haki Cebi, Hanching Fuh, Mengshu Hsu, Jong-Hoon Lee, Anuj Madan, Nuttapong Srirattana, Chuming Shih, Steven Christopher Sprinkle
  • CIRCUITS, DEVICES, METHODS AND APPLICATIONS RELATED TO SILICON-ON-INSULATOR BASED RADIO-FREQUENCY SWITCHES
    Publication number: 20140009214
    Abstract: Radio-frequency (RF) switch circuits are disclosed providing improved switching performance. An RF switch system includes a plurality of field-effect transistors (FETs) connected in series between first and second nodes, each FET having a gate and a body. A compensation network including a gate-coupling circuit couples the gates of each pair of neighboring FETs. The compensation network may further including a body-coupling circuit that couples the bodies of each pair of neighboring FETs.
    Type: Application
    Filed: July 6, 2013
    Publication date: January 9, 2014
    Inventors: Fikret Altunkilic, Guillaume Alexandre Blin, Haki Cebi, Hanching Fuh, Mengshu Hsu, Jong-Hoon Lee, Anuj Madan, Nuttapong Srirattana, Chuming Shih, Steven Christopher Sprinkle
  • BODY-GATE COUPLING TO REDUCE DISTORTION IN RADIO-FREQUENCY SWITCH
    Publication number: 20140009213
    Abstract: Radio-frequency (RF) switch circuits are disclosed having one or more transistors coupled to provide improved harmonic management. The RF switch circuits including at least one field-effect transistor (FET) disposed between first and second nodes, each of the at least one FET having a respective body and gate. A coupling circuit can be configured to couple the respective body and gate of each of the at least one FET. The coupling circuit can include a capacitor electrically parallel with a diode.
    Type: Application
    Filed: July 6, 2013
    Publication date: January 9, 2014
    Inventors: Steven Christopher Sprinkle, Mengshu Hsu, Chuming Shih, Jong-Hoon Lee