Patents by Inventor Meng-Ting Yu

Meng-Ting Yu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Capacitor embedded with nanocrystals
    Patent number: 10930583
    Abstract: The present disclosure provides one embodiment of a semiconductor structure that includes an interconnection structure formed on a semiconductor substrate; and a capacitor disposed in the interconnection structure. The interconnection structure includes a top electrode; a bottom electrode; a dielectric material layer sandwiched between the top and bottom electrodes; and a nanocrystal layer embedded in the dielectric material layer.
    Type: Grant
    Filed: July 27, 2018
    Date of Patent: February 23, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Cheng-Chieh Lai, Meng-Ting Yu, Yung-Hsien Wu, Kuang-Hsin Chen
  • Capacitor embedded with nanocrystals
    Patent number: 10319675
    Abstract: The present disclosure provides one embodiment of a semiconductor structure that includes an interconnection structure formed on a semiconductor substrate; and a capacitor disposed in the interconnection structure. The interconnection structure includes a top electrode; a bottom electrode; a dielectric material layer sandwiched between the top and bottom electrodes; and a nanocrystal layer embedded in the dielectric material layer.
    Type: Grant
    Filed: January 13, 2016
    Date of Patent: June 11, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Cheng-Chieh Lai, Meng-Ting Yu, Yung-Hsien Wu, Kuang-Hsin Chen
  • Capacitor Embedded with Nanocrystals
    Publication number: 20180337123
    Abstract: The present disclosure provides one embodiment of a semiconductor structure that includes an interconnection structure formed on a semiconductor substrate; and a capacitor disposed in the interconnection structure. The interconnection structure includes a top electrode; a bottom electrode; a dielectric material layer sandwiched between the top and bottom electrodes; and a nanocrystal layer embedded in the dielectric material layer.
    Type: Application
    Filed: July 27, 2018
    Publication date: November 22, 2018
    Inventors: Cheng-Chieh Lai, Meng-Ting Yu, Yung-Hsien Wu, Kuang-Hsin Chen
  • Capacitor Embedded with Nanocrystals
    Publication number: 20170200673
    Abstract: The present disclosure provides one embodiment of a semiconductor structure that includes an interconnection structure formed on a semiconductor substrate; and a capacitor disposed in the interconnection structure. The interconnection structure includes a top electrode; a bottom electrode; a dielectric material layer sandwiched between the top and bottom electrodes; and a nanocrystal layer embedded in the dielectric material layer.
    Type: Application
    Filed: January 13, 2016
    Publication date: July 13, 2017
    Inventors: Cheng-Chieh Lai, Meng-Ting Yu, Yung-Hsien Wu, Kuang-Hsin Chen