Abstract: A hybrid integrated optoelectronic chip including an optoelectronic chip and a silicon photonic chip, a material of the optoelectronic chip being different from a material of the silicon photonic chip. The optoelectronic chip includes at least one first waveguide. The silicon photonic chip includes at least one second waveguide and an installation recess. The optoelectronic chip is installed in the installation recess, and the first waveguide is optically connected to the second waveguide.

Abstract: A hybrid integrated optoelectronic chip including an optoelectronic chip and a silicon photonic chip, a material of the optoelectronic chip being different from a material of the silicon photonic chip. The optoelectronic chip includes at least one first waveguide. The silicon photonic chip includes at least one second waveguide and an installation recess. The optoelectronic chip is installed in the installation recess, and the first waveguide is optically connected to the second waveguide.

Abstract: An electro-optic modulator includes a doped structure disposed on a top silicon layer of a substrate. The doped structure includes an optical waveguide, and a first P-type doped region and a first N-type doped region disposed respectively on two sides of the optical waveguide. The first P-type doped region is connected to the optical waveguide by means of a plurality of P-type doped link arms, and the first N-type doped region is connected to the optical waveguide by means of a plurality of N-type doped link arms. End portions of the plurality of P-type doped link arms and end portions of the plurality of N-type doped link arms are alternately arranged along a direction of light propagation to form PN junction depletion layers. The PN junction depletion layers are periodically arranged along the direction of light propagation to form the optical waveguide.

Abstract: An electro-optic modulator includes a doped structure disposed on a top silicon layer of a substrate. The doped structure includes an optical waveguide, and a first P-type doped region and a first N-type doped region disposed respectively on two sides of the optical waveguide. The first P-type doped region is connected to the optical waveguide by means of a plurality of P-type doped link arms, and the first N-type doped region is connected to the optical waveguide by means of a plurality of N-type doped link arms. End portions of the plurality of P-type doped link arms and end portions of the plurality of N-type doped link arms are alternately arranged along a direction of light propagation to form PN junction depletion layers. The PN junction depletion layers are periodically arranged along the direction of light propagation to form the optical waveguide.