Patents by Inventor Mengxia HAN

Mengxia HAN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • TiCB—Al seed alloy, manufacturing method thereof and heritable aluminum alloy
    Patent number: 11629392
    Abstract: The present disclosure provides a TiCB—Al seed alloy, a manufacturing method thereof and a heritable aluminum alloy. The TiCB—Al seed alloy includes an Al matrix and TiCB@TiBC seed crystals dispersed on the Al matrix, wherein the TiCB@TiBC seed crystal comprises a core part and a shell part, the core part contains B-doped TiCB, and the shell part covers at least a part of the core part and contains a TiBC ternary phase, wherein the B-doped TiCB refers to a TiCB phase formed by B atoms occupying C vacancies in a TiCx crystal, and the TiBC ternary phase refers to a ternary phase composed of Ti, B and C, wherein x<1.
    Type: Grant
    Filed: December 22, 2020
    Date of Patent: April 18, 2023
    Assignees: SHANDONG UNIVERSITY, SHANDONG MAIAOJING NEW MATERIALS COMPANY LIMITED, SHANDONG AL&MG MELT TECHNOLOGY COMPANY LIMTTED
    Inventors: Xiangfa Liu, Jinfeng Nie, Qianqian Sun, Guiliang Liu, Mengxia Han
  • TiCB-AL SEED ALLOY, MANUFACTURING METHOD THEREOF AND HERITABLE ALUMINUM ALLOY
    Publication number: 20220056558
    Abstract: The present disclosure provides a TiCB-Al seed alloy, a manufacturing method thereof and a heritable aluminum alloy. The TiCB-Al seed alloy includes an Al matrix and TiCB@TiBC seed crystals dispersed on the Al matrix, wherein the TiCB@TiBC seed crystal comprises a core part and a shell part, the core part contains B-doped TiCB, and the shell part covers at least a part of the core part and contains a TiBC ternary phase, wherein the B-doped TiCB refers to a TiCB phase formed by B atoms occupying C vacancies in a TiCx crystal, and the TiBC ternary phase refers to a ternary phase composed of Ti, B and C, wherein x<1.
    Type: Application
    Filed: December 22, 2020
    Publication date: February 24, 2022
    Inventors: Xiangfa LIU, Jinfeng NIE, Qianqian SUN, Guiliang LIU, Mengxia HAN