Abstract: An antifuse structure and IC devices incorporating such antifuse structures in which the antifuse structure includes an dielectric antifuse structure formed on an active area having a first dielectric antifuse electrode, a second dielectric antifuse electrode extending parallel to the first dielectric antifuse electrode, a first dielectric composition between the first dielectric antifuse electrode and the second dielectric antifuse electrode, and a first programming transistor electrically connected to a first voltage supply wherein, during a programming operation a programming voltage is selectively applied to certain of the dielectric antifuse structures to form a resistive direct electrical connection between the first dielectric antifuse electrode and the second dielectric antifuse electrode.

Abstract: A method of preparing a solution for forming a doped gel monolith includes providing a first substance including a metal alkoxide. The method further includes providing a second substance including a catalyst. The method further includes providing a chemical including a dopant. The method further includes forming a solution including the dopant, said forming including mixing the first substance and the second substance together. The method further includes cooling the solution to a mixture temperature which is at or below zero degrees Celsius, wherein the solution has a significantly longer gelation time at the mixture temperature than at room temperature.

Abstract: A method of manufacturing a xerogel monolith having a pore diameter distribution includes preparing a first solution comprising metal alkoxide and preparing a second solution comprising a catalyst. A third solution is prepared by mixing the first solution and the second solution together. At least one of the first, second, and third solutions is cooled to achieve a mixture temperature for the third solution which is substantially below room temperature, wherein the third solution has a significantly longer gelation time at the mixture temperature as compared to a room temperature gelation time for the third solution. The method further includes allowing the third solution to gel, thereby forming a wet gel monolith. The method further includes forming the xerogel monolith by drying the wet gel monolith.

Abstract: A method of forming a gel monolith includes preparing a first solution comprising metal alkoxide and preparing a second solution comprising a catalyst. A third solution is prepared by mixing the first solution and the second solution together. At least one of the first, second, and third solutions is cooled to achieve a mixture temperature for the third solution which is substantially below room temperature, wherein the third solution has a significantly longer gelation time at the mixture temperature as compared to a room temperature gelation time for the third solution. The method further includes allowing the third solution to gel, thereby forming the gel monolith.

Abstract: A method of manufacturing a xerogel monolith having a pore diameter distribution includes preparing a first solution comprising metal alkoxide and preparing a second solution comprising a catalyst. A third solution is prepared by mixing the first solution and the second solution together. At least one of the first, second, and third solutions is cooled to achieve a mixture temperature for the third solution which is substantially below room temperature, wherein the third solution has a significantly longer gelation time at the mixture temperature as compared to a room temperature gelation time for the third solution. The method further includes allowing the third solution to gel, thereby forming a wet gel monolith. The method further includes forming the xerogel monolith by drying the wet gel monolith.

Abstract: A method of preparing a solution for forming a doped gel monolith includes providing a first substance including a metal alkoxide. The method further includes providing a second substance including a catalyst. The method further includes providing a chemical including a dopant. The method further includes forming a solution including the dopant, said forming including mixing the first substance and the second substance together. The method further includes cooling the solution to a mixture temperature which is at or below zero degrees Celsius, wherein the solution has a significantly longer gelation time at the mixture temperature than at room temperature.

Abstract: A method of forming a gel monolith includes preparing a first solution comprising metal alkoxide and preparing a second solution comprising a catalyst. A third solution is prepared by mixing the first solution and the second solution together. At least one of the first, second, and third solutions is cooled to achieve a mixture temperature for the third solution which is substantially below room temperature, wherein the third solution has a significantly longer gelation time at the mixture temperature as compared to a room temperature gelation time for the third solution. The method further includes allowing the third solution to gel, thereby forming the gel monolith.

Abstract: A method of manufacturing a xerogel monolith having a pore diameter distribution includes preparing a first solution comprising metal alkoxide and preparing a second solution comprising a catalyst. A third solution is prepared by mixing the first solution and the second solution together. At least one of the first, second, and third solutions is cooled to achieve a mixture temperature for the third solution which is substantially below room temperature, wherein the third solution has a significantly longer gelation time at the mixture temperature as compared to a room temperature gelation time for the third solution. The method further includes allowing the third solution to gel, thereby forming a wet gel monolith. The method further includes forming the xerogel monolith by drying the wet gel monolith.